Abstract: Provided is a Device, a System, applications and an associated Ecosystem for the consistent and reliable production, creation, generation, management and utilization of two-dimensional (‘2D’) barcodes (‘Codes’) featuring embedded Images, designating the alignment position and alignment size of the embedding Images in 2D Codes and enabling the corresponding outputted Code files by the Device System to be downloaded and or showcased digitally within all forms of digital advertising, media, television, mobile telephony and the world wide web as well as integrated with the production processes for consumer products and packaged goods, printed products, merchandise and other items featuring such 2D Codes creating a public telecommunications platform and or private intranet services featuring a searchable database, directory and or registry of the 2D Codes with embedded Images that have been created by, produced by and outputted by the Device or System.

Abstract: The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed.

Abstract: The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed.

Abstract: The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed.

Abstract: The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed.

Abstract: A die-assisted squeeze-forming apparatus, for bending hooks of a plate against a container e.g. a tank, is able to be used with various shapes of the plate and container without replacement of the die structure. To that end, the apparatus is provided with a calking die structure which has a plurality of divided, relatively movable dies, each movable die being subject to being individually actuated by an actuator. The preferred embodiment of the apparatus also includes a controlling means which controls the movement of the actuators and a detecting means which detects a feature of the tank which is symbolic of the size and shape of that tank. The electric signal which indicates the feature of the container is applied to the controlling means. Then the controlling means sends a respective controlling signal for controlling the movement of the actuators in order to cause an adequate rearrangement of the shape of the calking die structure should the tank be different in size or shape then the preceeding one.