Abstract: A method of manufacturing a wavelength conversion member including a polycrystalline ceramics includes mixing a substance serving as a silicon source, a substance serving as an aluminum source, a substance serving as a calcium source, and a substance serving as a europium source; firing the obtained mixture to obtain an oxynitride phosphor powder; then sintering the oxynitride phosphor powder in an inert atmosphere to obtain the polycrystalline ceramics, characterized in that the sintered oxynitride phosphor powder has a composition (excluding oxygen) represented by the Formula: Cax1Eux2Si12-(y+z)Al(y+z)OzN16-z (in the Formula, x1, x2, y, and z are values such that 0<x1?3.40, 0.05?x2?0.20, 3.5?y?7.0, 0?z?1).

Abstract: An objective of the present invention is to provide a ceramic composite material for light conversion which exhibit s excellent heat resistance, durability, and the like as a light converting member of an optical device such as a white light emitting diode, easily controls the ratio of light from a light source and fluorescence, can reduce color unevenness and variance of emitted light, and has high internal quantum efficiency and fluorescence intensity, a method for producing the same, and a light emitting device which includes the same and has high light conversion efficiency. Provided is a ceramic composite material for light conversion including: a fluorescence phase; and a light transmitting phase, the fluorescence phase being a phase containing Ln3Al5O12:Ce (Ln is at least one element selected from Y, Lu, and Tb, and Ce is an activation element), and the light transmitting phase being a phase containing LaAl11O18.

Abstract: A method of manufacturing a wavelength conversion member including a polycrystalline ceramics includes mixing a substance serving as a silicon source, a substance serving as an aluminum source, a substance serving as a calcium source, and a substance serving as a europium source; firing the obtained mixture to obtain an oxynitride phosphor powder; then sintering the oxynitride phosphor powder in an inert atmosphere to obtain the polycrystalline ceramics, characterized in that the sintered oxynitride phosphor powder has a composition (excluding oxygen) represented by the Formula: Cax1Eux2Si12-(y+z)Al(y+z)OzN16-z (in the Formula, x1, x2, y, and z are values such that 0<x1?3.40, 0.05?x2?0.20, 3.5?y?7.0, 0?z?1).

Abstract: There is provided a dielectric ceramic composition for high-frequency use represented by a composition formula of a(Sn,Ti)O2-bMg2SiO4-cMgTi2O5-dMgSiO3. In the composition formula, a, b, c and d (provided that a, b, c and d are mol %) are within the following ranges: 4?a?37, 34?b?92, 2?c?15 and 2?d?15, respectively, and a+b+c+d=100. The dielectric ceramic composition for high-frequency use has a relative permittivity ?r of 7.5-12.0, a Qm×fo value of not less than 50000 (GHz) and an absolute value of a temperature coefficient ?f of resonance frequency fo of not more than 30 ppm/° C.

Abstract: There is provided a dielectric ceramic composition for high-frequency use represented by a composition formula of a(Sn,Ti)O2-bMg2SiO4-cMgTi2O5-dMgSiO3. In the composition formula, a, b, c and d (provided that a, b, c and d are mol %) are within the following ranges: 4?a?37, 34?b?92, 2?c?15 and 2?d?15, respectively, and a+b+c+d=100. The dielectric ceramic composition for high-frequency use has a relative permittivity ?r of 7.5-12.0, a Qm×fo value of not less than 50000 (GHz) and an absolute value of a temperature coefficient ?f of resonance frequency fo of not more than 30 ppm/° C.

Abstract: A low temperature sinterable dielectric ceramic composition is obtained by bending 2.5-20 parts by weight of a glass component per 100 parts by weight of an aggregate of dielectric particles which are composed of Ti-containing dielectric material and contain an oxide including Ti and Zn in the surface portions. A low temperature sintered dielectric ceramic is produced by sintering this low temperature sinterable dielectric ceramic composition at 880 to 1000° C. With this low temperature sinterable dielectric ceramic composition, there can be obtained a multiplayer electronic component having an internal conductor composed of Ag, Cu or an alloy containing at least one of them.

Abstract: A low temperature sinterable dielectric ceramic composition is obtained by bending 2.5-20 parts by weight of a glass component per 100 parts by weight of an aggregate of dielectric particles which are composed of Ti-containing dielectric material and contain an oxide including Ti and Zn in the surface portions. A low temperature sintered dielectric ceramic is produced by sintering this low temperature sinterable dielectric ceramic composition at 880 to 1000° C. With this low temperature sinterable dielectric ceramic composition, there can be obtained a multiplayer electronic component having an internal conductor composed of Ag, Cu or an alloy containing at least one of them.

Abstract: The dielectric ceramic composition of the first aspect of the invention comprises an essential component having a compositional formula of xBaO-yTiO2-zNd2O3 (wherein 0.02≦x≦0.2, 0.6≦y≦0.8, 0.01≦z≦0.3, x+y+z=1), and contains two types of glass powder, one comprising PbO, ZnO and B2O3 and the other comprising SiO2 and B2O3, and a third component that comprises Al2O3, SrTiO3, GeO2 and Li2O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr;r falls between 10 and 50 or so, its unloaded Q is large, and its temperature-dependent resonant frequency change is small. The dielectric ceramic composition of the second aspect of the invention comprises an essential component having a compositional formula of s(xBaO-yTiO2-zNd2O3)-tNd2Ti2O7 (wherein 0.02≦x≦0.2, 0.6≦y≦0.8, 0.01≦z≦0.3, x+y+z=1, 0.1≦s≦0.8, 0.2≦t≦0.

Abstract: The dielectric ceramic composition of the first aspect of the invention comprises an essential component having a compositional formula of xBaO-yTiO2-zNd2O3 (wherein 0.02≦x≦0.2, 0.6≦y≦0.8, 0.01≦z≦0.3, x+y+z=1), and contains two types of glass powder, one comprising PbO, ZnO and B2O3 and the other comprising SiO2 and B2O3, and a third component that comprises Al2O3, SrTiO3, GeO2 and Li2O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr;r falls between 10 and 50 or so, its unloaded Q is large, and its temperature-dependent resonant frequency change is small.