Abstract: A Peltier module for laser diode that can be mounted with high melting point solder is provided. A Peltier module for laser diode includes: a heat dissipation-side substrate; a heat dissipation-side electrode; a p-type thermoelectric conversion element and an n-type thermoelectric conversion element; a solder joint layer; and Ni-containing layers. The solder joint layer is disposed between the heat dissipation-side electrode and each of the p-type and n-type thermoelectric conversion elements, and includes Ni intermetallic compound containing Au and Sn, Au5Sn intermetallic compound, and a eutectic composition including Au5Sn intermetallic compound and AuSn intermetallic compound. The Ni-containing layer is disposed between the solder joint layer and the heat dissipation-side electrode and between the solder joint layer and each of the p-type and n-type thermoelectric conversion elements. The solder joint layer has a eutectic ratio of 15.1% or less.

Abstract: A Peltier module for laser diode that can be mounted with high melting point solder is provided. A Peltier module for laser diode includes: a heat dissipation-side substrate; a heat dissipation-side electrode; a p-type thermoelectric conversion element and an n-type thermoelectric conversion element; a solder joint layer; and Ni-containing layers. The solder joint layer is disposed between the heat dissipation-side electrode and each of the p-type and n-type thermoelectric conversion elements, and includes Ni intermetallic compound containing Au and Sn, Au5Sn intermetallic compound, and a eutectic composition including Au5Sn intermetallic compound and AuSn intermetallic compound. The Ni-containing layer is disposed between the solder joint layer and the heat dissipation-side electrode and between the solder joint layer and each of the p-type and n-type thermoelectric conversion elements. The solder joint layer has a eutectic ratio of 15.1% or less.

Abstract: A thermoelectric module (1) utilizing the Peltier effect, exhibiting an element-occupied area ratio of 40% or below, the element-occupied area ratio defined as the ratio of the sum of cross-sectional areas, perpendicular to the direction of electric current passage, of thermoelectric elements (5a,5b) to the area of insulating substrate (2a) being in contact with an object to be cooled via a metalized layer (4a), wherein metalized layers (4a,4b) are provided with slits. In this construction, there can be prevented breakage of thermoelectric device by thermal stress occurring at assembly, or thermal stress occurring at pre-tinning conducted in advance for attaching an object to be cooled or at attaching package, etc.