Patents by Inventor Masataka YOKOSAWA

Masataka YOKOSAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Backside illuminated semiconductor light-receiving device, optical receiver module, and optical transceiver
    Patent number: 8575714
    Abstract: Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion.
    Type: Grant
    Filed: April 13, 2011
    Date of Patent: November 5, 2013
    Assignee: Oclaro Japan, Inc.
    Inventors: Takashi Toyonaka, Hiroshi Hamada, Masataka Yokosawa
  • BACKSIDE ILLUMINATED SEMICONDUCTOR LIGHT-RECEIVING DEVICE, OPTICAL RECEIVER MODULE, AND OPTICAL TRANSCEIVER
    Publication number: 20110286083
    Abstract: Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion.
    Type: Application
    Filed: April 13, 2011
    Publication date: November 24, 2011
    Applicant: OPNEXT JAPAN, INC.
    Inventors: Takashi TOYONAKA, Hiroshi HAMADA, Masataka YOKOSAWA