Abstract: An ion generation method uses a direct current discharge ion source provided with an arc chamber formed of a high melting point material, and includes: generating ions by causing molecules of a source gas to collide with thermoelectrons in the arc chamber and producing plasma discharge; and causing radicals generated in generating ions to react with a liner provided to cover an inner wall of the arc chamber at least partially. The liner is formed of a material more reactive to radicals generated as the source gas is dissociated than the material of the arc chamber.

Abstract: An ion source device has a configuration in which a cathode is provided in an arc chamber having a space for plasma formation, and a repeller is disposed to face a thermal electron discharge face of the cathode by interposing the space for plasma formation therebetween. An external magnetic field that is induced by a source magnetic field unit is applied to the space for plasma formation in a direction parallel to an axis that connects the cathode and the repeller. An opening is provided in a place corresponding to a portion in the repeller with the highest density of plasma that is formed in the space for plasma formation, and an ion beam is extracted from the opening.

Abstract: An ion source apparatus includes a rare gas supply source supplying rare gas instead of ion source gas to a plasma chamber, means to determine time and timing for cleaning electrodes in consideration of a collecting amount of insulation layers accreting to the electrodes of an extraction electrode system. Based on the above, the ion source apparatus removes the insulation layers by sputtering with ion beam of the rare gas while adjusting extraction or accelerate voltage and supply amount of the rare gas as a setting parameter. Moreover, by adjusting the setting parameter which changes a diameter of ion beam based on the rare gas when the ion beam collides onto each electrode surface of the extraction electrode system, the beam diameter is focused within an effective range in which intension of the sputtering of the insulation layers is maximized thus evenly removing the insulation layers.

Abstract: The ion source apparatus of the present invention includes at least one pair of antenna-opposed magnets sandwiching an antenna element and moveable to magnetic element and the antenna element both in horizontal and vertical directions in a plasma chamber, and a control means performing a positional adjustment over the antenna-opposed magnets to the antenna element in the plasma chamber. An electrons-generated region of high-concentration is formed around the antenna element through electric fields based on outputs of the antenna element and magnetic fields of the antenna-opposed magnets crossing the antenna element.

Abstract: An ion source apparatus includes a rare gas supply source supplying rare gas instead of ion source gas to a plasma chamber, means to determine time and timing for cleaning electrodes in consideration of a collecting amount of insulation layers accreting to the electrodes of an extraction electrode system. Based on the above, the ion source apparatus removes the insulation layers by sputtering with ion beam of the rare gas while adjusting extraction or accelerate voltage and supply amount of the rare gas as a setting parameter. Moreover, by adjusting the setting parameter which changes a diameter of ion beam based on the rare gas when the ion beam collides onto each electrode surface of the extraction electrode system, the beam diameter is focused within an effective range in which intension of the sputtering of the insulation layers is maximized thus evenly removing the insulation layers.

Abstract: The ion source apparatus of the present invention includes at least one pair of antenna-opposed magnets sandwiching an antenna element and moveable to magnetic element and the antenna element both in horizontal and vertical directions in a plasma chamber, and a control means performing a positional adjustment over the antenna-opposed magnets to the antenna element in the plasma chamber. An electrons-generated region of high-concentration is formed around the antenna element through electric fields based on outputs of the antenna element and magnetic fields of the antenna-opposed magnets crossing the antenna element.

Abstract: An attenuator (90) for an ion source (26) is provided. The ion source comprises a plasma chamber (76) in which a gas is ionized by an exciter (78) to create a plasma which is extractable through at least one aperture (64) in an apertured portion (50) of the chamber to form an ion beam. The attenuator (90) comprises a member (90) positioned within the chamber (76) intermediate the exciter (78) and the at least one aperture (64), the member providing at least one first opening (97) corresponding the at least one aperture (64), and being moveable between first and second positions with respect to the at least one aperture. In one embodiment, in the first position, the member is positioned adjacent the aperture (64) to obstruct at least a portion of the aperture, and in the second position the member is positioned away from the aperture (64) so as not to obstruct the aperture.

Abstract: A mounting portion (protruding portion provided with a through hole) of a magnetic head assembly is fitted into an insertion hole formed at the forward end of a carriage arm, and a thus-produced inlay portion is disposed between adjacent first members having a V-shaped slit. A second member is pushed into the V-shaped slit of each first member and the magnetic head assembly is pressed against the carriage arm by the expanding force of the slit portions of each first member which is produced in proportion to the amount of insertion of the second member, and the magnetic head assembly is held in a fixed state. In this state, a caulking ball is press-fitted into the through hole of the protruding portion with a caulking pin so as to caulk the inlay portion. The magnetic head assembly is pressed against the carriage arm perpendicularly thereto.

Abstract: In an ion implanting apparatus equipped with an electron shower for neutralizing the positive charge-up by the ion implantation with electrons, an electrically conductive tube is disposed just before the workpiece to be ion-implanted to pass through an ion beam which has a diameter nearly equal to the inner hollow channel of the tube section to absorb those electrons which do not overlap the positive ion beam, and a flange section extends substantially parallel to the surface of the workpiece to absorb the secondary electrons emitted from the ion implant portion thereby suppressing the negative change-up around the ion implanted portion.

Abstract: In an ion implanting apparatus, a first conductor member for monitoring the charge-up of the workpiece is positioned on the front face of a wafer disk, a second conductor member electrically connected with the first conductor member for distributing the charge on the first conductor member is positioned on the rear face of the wafer disk, and a third conductor capable of forming capacitive coupling with the second conductor member is fixed to a disk chamber. When the first conductor member is charged, the charge is distributed also to the second conductor member. When the second conductor member passes by the third conductor member by the rotation of the disk, charge is induced on the third conductor member depending on the charged state of the second conductor member. The first, the second and the third conductor members can be effectively shielded from the surroundings. Charge detection with a high S/N ratio is made possible.