Abstract: A cell culture container includes a culture membrane held between first and second containers each including: a first surface which includes a holding portion for holding the culture membrane; a second surface which is opposite the first surface; a first cell and a second cell which are adjacent to each other in a second direction orthogonal to a first direction from the first surface toward the second surface; a partition wall which separates the first cell and the second cell and extends from the first surface toward the second surface; a communication portion which is formed between the partition wall and the second surface and causes the first cell and the second cell to communicate with each other; and a third surface which is opposite the partition wall in the second direction, defines the second cell together with the second surface and has an insertion opening formed.

Abstract: A cell culture device includes: a holding member including a main body cylindrical portion extending in a cylindrical shape in an axial direction and a holding portion provided at an axially intermediate portion of the main body cylindrical portion and holding a culture membrane; a first cylindrical member detachably mounted on one axial side with respect to the holding member, extending in a cylindrical shape in the axial direction, and protruding from one axial end of the holding member toward the one axial side when being mounted to the holding member; and a second cylindrical member detachably mounted on another axial side with respect to the holding member, extending in a cylindrical shape in the axial direction, and protruding from another axial end of the holding member toward the other axial side when being mounted to the holding member.

Abstract: A cell culture device includes a holding member including a main body cylindrical portion extending in a cylindrical shape in an axial direction and a holding portion provided at an axially intermediate portion of the main body cylindrical portion and holding a culture membrane; and a first cylindrical member detachably mounted on one axial side with respect to the holding member, extending in a cylindrical shape in the axial direction, and protruding from one axial end of the holding member toward the one axial side when being mounted to the holding member. Also included is a second cylindrical member detachably mounted on another axial side with respect to the holding member, extending in a cylindrical shape in the axial direction, and protruding from another axial end of the holding member toward the other axial side when being mounted to the holding member.

Abstract: A method for producing a Group III nitride semiconductor includes feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate, wherein the Group III nitride semiconductor is grown on the seed substrate, while controlling the surface modification weight ratio, which is defined as the ratio of the weight of Na including a portion surface-modified through oxidation or hydroxidation to the weight of Na when the surface thereof has no surface-modified portion as a reference weight, with Na serving as the flux.

Abstract: A cell culture method includes: a preparation step of preparing a cell culture membrane that includes (i) a membrane body formed of a thermosetting resin and including a first surface and a second surface opposite the first surface and (ii) a plurality of through pores formed in the membrane body and penetrating from the first surface to the second surface; and a culture step of seeding and culturing cells on each of the first surface and the second surface of the cell culture membrane prepared, in the through pores, a first average pore diameter in the first surface is smaller than a second average pore diameter in the second surface and the pore density of the through pores is equal to or less than 2.0×105 pores/cm2.

Abstract: A method for producing a Group III nitride semiconductor includes feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate. At least an oxidation amount of Na, serving as the flux, is controlled outside the furnace, and the controlled Na is fed into the furnace.

Abstract: A cell culture device includes: a holding member including a main body cylindrical portion extending in a cylindrical shape in an axial direction and a holding portion provided at an axially intermediate portion of the main body cylindrical portion and holding a culture membrane; a first cylindrical member detachably mounted on one axial side with respect to the holding member, extending in a cylindrical shape in the axial direction, and protruding from one axial end of the holding member toward the one axial side when being mounted to the holding member; and a second cylindrical member detachably mounted on another axial side with respect to the holding member, extending in a cylindrical shape in the axial direction, and protruding from another axial end of the holding member toward the other axial side when being mounted to the holding member.

Abstract: The present invention suppresses anomalous growth of a Group III nitride semiconductor at the periphery of a seed substrate. The invention is directed to a method for producing a Group III nitride semiconductor including feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate. The oxygen concentration of the furnace internal atmosphere is elevated after the growth initiation temperature of the Group III nitride semiconductor has been achieved. In a period from the initiation of the growth to a certain timing, the oxygen concentration of the furnace internal atmosphere is controlled to 0.02 ppm or less, and thereafter, to greater than 0.02 ppm and 0.1 ppm or less.

Abstract: An object of the present invention is to suppress macro step growth in the growth of GaN crystal through a flux method. As a crucible for holding a melt when growing a GaN crystal through the Na flux method, the crucible is made of alumina and produced by plaster mold casting. The crucible is used, in which there are alumina grains abnormally grown on the inner walls thereof, and the maximum grain size of the abnormally grown alumina grains is not less than 10 ?m. When such a crucible is selected and used, the macro step growth can be suppressed, thereby improving the GaN crystal quality.

Abstract: An object of the present invention is to suppress macro step growth in the growth of GaN crystal through a flux method. As a crucible for holding a melt when growing a GaN crystal through the Na flux method, the crucible is made of alumina and produced by plaster mold casting. The crucible is used, in which there are alumina grains abnormally grown on the inner walls thereof, and the maximum grain size of the abnormally grown alumina grains is not less than 10 ?m. When such a crucible is selected and used, the macro step growth can be suppressed, thereby improving the GaN crystal quality.