Patents by Inventor Masato Araki
Masato Araki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11969662Abstract: There is provided a robot device including: a head portion coupled to a trunk; four leg portions on a front left, a front right, a rear left, and a rear right coupled to the trunk; a first indirect portion that tilts the head portion left and right; and a second joint portion that rotates, with respect to the trunk, one of the leg portions on the rear left and the rear right to a front side, and the other to a rear side. It is possible to faithfully reproduce the movement of the four-legged animal by providing the first joint portion and the second joint portion.Type: GrantFiled: September 6, 2018Date of Patent: April 30, 2024Assignee: SONY CORPORATIONInventors: Hidenori Ishibashi, Tomoo Mizukami, Takuma Araki, Masato Muraki, Tomoyuki Arai, Goushi Koike, Takayuki Ito, Kouta Katsumura, Yohei Watanabe, Muneyuki Horiguchi, Takashi Maeda, Satoshi Muto, Hideo Miyano
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Patent number: 11927120Abstract: An exhaust gas sensor includes an element cover, a heater, a heater control section, and a cover state diagnosing section. The element cover accommodates a sensor element including a detection section and includes one or more gas flow holes. The heater heats the sensor element. The heater control section controls how the heater heats the sensor element. The cover state diagnosing section diagnoses a state of the element cover using heater information obtained when the heater is operated by the heater control section. The cover state diagnosing section includes a diagnosability determining section, which determines whether the state of the element cover is diagnosable based on an accuracy of the heater information obtained from an operating state of the heater and a surrounding environmental state of the element cover.Type: GrantFiled: April 22, 2021Date of Patent: March 12, 2024Assignee: DENSO CORPORATIONInventors: Takashi Araki, Masato Katsuno
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Patent number: 11920240Abstract: A substrate processing apparatus configured to process a substrate includes a functional component constituting a part of the substrate processing apparatus; a nozzle, provided on a surface of the functional component, allowing a gas to pass therethrough; a nozzle flow path which is connected to the nozzle of the functional component and through which the gas flows; a flow rate sensor configured to measure a flow rate of the gas flowing through the nozzle flow path; and a controller configured to make a determination upon a state of a distance between an interfering object and the functional component based on a measurement result obtained by the flow rate sensor.Type: GrantFiled: October 12, 2021Date of Patent: March 5, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Ryo Araki, Junnosuke Maki, Mitsuteru Yano, Masato Hayashi
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Patent number: 11811387Abstract: An elastic wave device includes a support substrate, a piezoelectric layer disposed on the support substrate, and an IDT electrode disposed on a piezoelectric layer and including first and second electrode fingers that are interdigitated. A region where the first and second electrode fingers overlap each other as seen in a direction of propagation of elastic waves is an excitation region. Edge portions where an acoustic velocity is lower than an acoustic velocity in a central portion are disposed on opposite sides of a central portion in the excitation region. A first busbar and second busbar include inner busbar portions, central busbar portions, and outer busbar portions. First and second offset electrode fingers extend from the inner busbar portions toward the leading ends of the second electrode fingers or first electrode fingers.Type: GrantFiled: October 16, 2020Date of Patent: November 7, 2023Assignee: Murata Manufacturing Co., Ltd.Inventors: Katsuya Daimon, Masato Araki
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Publication number: 20230272523Abstract: A deposition method performed using a deposition apparatus is provided. The deposition apparatus includes: a source line configured to supply Ru3(CO)12 contained in a raw material container into a chamber; a CO gas line configured to supply a CO gas into the raw material container; a bypass line connecting the source line and the CO gas line, and forming a line that does not pass through the raw material container; and a first valve connected to the source line. The deposition method includes: opening the first valve to supply Ru3(CO)12 and the CO gas from the raw material container through the source line; and controlling a pressure in the source line such that the pressure in the source line is a predetermined first pressure or more, and closing the first valve to stop supplying of Ru3(CO)12 and the CO gas to the chamber.Type: ApplicationFiled: June 23, 2021Publication date: August 31, 2023Inventors: Yuichi FURUYA, Kohichi SATOH, Masato ARAKI
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Patent number: 11702734Abstract: A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.Type: GrantFiled: November 4, 2021Date of Patent: July 18, 2023Assignee: Tokyo Electron LimitedInventors: Shunji Yamakawa, Tadahiro Ishizaka, Kohichi Satoh, Masato Araki
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Publication number: 20230090881Abstract: A film-forming method of embedding ruthenium in a substrate having a recess includes: (a) providing the substrate in a processing container; (b) supplying a gas containing a ruthenium raw material gas into the processing container to form a ruthenium layer; (c) annealing the ruthenium layer; and (d) supplying a gas containing an ozone gas into the processing container to etch the ruthenium layer, wherein (b), (c), and (d) are repeatedly executed in this order.Type: ApplicationFiled: September 15, 2022Publication date: March 23, 2023Inventors: Masato ARAKI, Tadahiro ISHIZAKA, Kohichi SATOH
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Patent number: 11405021Abstract: A filter device includes a filter circuit that is connected to terminals, is defined by a first acoustic wave resonator that has a first frequency band as a pass band, and an additional circuit that is connected in parallel to at least one first acoustic wave resonator between the terminal and the terminal. The additional circuit is defined by a second acoustic wave resonator in which an electromechanical coupling coefficient of the additional circuit is different from an electromechanical coupling coefficient of the filter circuit.Type: GrantFiled: June 11, 2020Date of Patent: August 2, 2022Assignee: MURATA MANUFACTURING CO., LTD.452644Inventor: Masato Araki
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Publication number: 20220145451Abstract: A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.Type: ApplicationFiled: November 4, 2021Publication date: May 12, 2022Inventors: Shunji YAMAKAWA, Tadahiro ISHIZAKA, Kohichi SATOH, Masato ARAKI
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Patent number: 11211914Abstract: An acoustic wave device includes a piezoelectric substrate in which a reverse-velocity surface is convex and an IDT electrode on the piezoelectric substrate. When an acoustic wave propagation direction is a first direction and a direction perpendicular or substantially perpendicular to the first direction is a second direction, the portion of the IDT electrode where first and second electrode fingers overlap in the first direction is a crossing region. The crossing region includes a center region centrally located in the second direction and a first and second edge regions located on two sides of the center region. Recesses 17 and 18 are respectively provided in portions of the piezoelectric substrate located in the first and second edge regions between the portions where the first and second electrode fingers are provided.Type: GrantFiled: September 16, 2020Date of Patent: December 28, 2021Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Katsuya Daimon, Masato Araki
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Patent number: 11066998Abstract: A compressor rotor includes a first outer cavity formed in a rotor main body and into which air on a high-pressure side of blades is to be introduced, a first inner cavity formed in the rotor main body on an inner side in a radial direction of the first outer cavity; and a first communication passage which connects the first outer cavity and the first inner cavity to each other in the radial direction of the first outer cavity. Along an entire length of the first communication passage from the first outer cavity to the first inner cavity, the first communication passage is inclined toward a forward side of a rotation direction of the rotor main body.Type: GrantFiled: March 30, 2017Date of Patent: July 20, 2021Assignee: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Yoshiko Oya, Yoshiyuki Okabe, Masato Araki
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Publication number: 20210054503Abstract: There is provided a substrate processing method which includes placing a substrate on a stage provided inside a processing container, and forming a ruthenium film on the substrate, wherein forming the ruthenium film includes repeating a cycle including: supplying a ruthenium-containing gas and a CO gas into the processing container; and stopping the supply of the ruthenium-containing gas and the CO gas into the processing container and exhausting a gas within the processing container.Type: ApplicationFiled: August 18, 2020Publication date: February 25, 2021Inventors: Masato ARAKI, Kohichi SATOH, Tadahiro ISHIZAKA, Takashi SAKUMA
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Publication number: 20210036681Abstract: An elastic wave device includes a support substrate, a piezoelectric layer disposed on the support substrate, and an IDT electrode disposed on a piezoelectric layer and including first and second electrode fingers that are interdigitated. A region where the first and second electrode fingers overlap each other as seen in a direction of propagation of elastic waves is an excitation region. Edge portions where an acoustic velocity is lower than an acoustic velocity in a central portion are disposed on opposite sides of a central portion in the excitation region. A first busbar and second busbar include inner busbar portions, central busbar portions, and outer busbar portions. First and second offset electrode fingers extend from the inner busbar portions toward the leading ends of the second electrode fingers or first electrode fingers.Type: ApplicationFiled: October 16, 2020Publication date: February 4, 2021Applicant: Murata Manufacturing Co., Ltd.Inventors: Katsuya DAIMON, Masato ARAKI
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Publication number: 20210006223Abstract: An acoustic wave device includes a piezoelectric substrate in which a reverse-velocity surface is convex and an IDT electrode on the piezoelectric substrate. When an acoustic wave propagation direction is a first direction and a direction perpendicular or substantially perpendicular to the first direction is a second direction, the portion of the IDT electrode where first and second electrode fingers overlap in the first direction is a crossing region. The crossing region includes a center region centrally located in the second direction and a first and second edge regions located on two sides of the center region. Recesses 17 and 18 are respectively provided in portions of the piezoelectric substrate located in the first and second edge regions between the portions where the first and second electrode fingers are provided.Type: ApplicationFiled: September 16, 2020Publication date: January 7, 2021Inventors: Katsuya DAIMON, Masato ARAKI
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Patent number: 10840878Abstract: An elastic wave device includes an IDT electrode disposed on a piezoelectric substrate and including first and second electrode fingers that are interdigitated. A region where the first and second electrode fingers overlap each other as seen in a direction of propagation of elastic waves is an excitation region. Edge portions where an acoustic velocity is lower than an acoustic velocity in a central portion are disposed on opposite sides of a central portion in the excitation region. A first busbar and second busbar include inner busbar portions, central busbar portions, and outer busbar portions. First and second offset electrode fingers extend from the inner busbar portions toward the leading ends of the second electrode fingers or first electrode fingers.Type: GrantFiled: October 19, 2017Date of Patent: November 17, 2020Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Katsuya Daimon, Masato Araki
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Publication number: 20200304104Abstract: A filter device includes a filter circuit that is connected to terminals, is defined by a first acoustic wave resonator that has a first frequency band as a pass band, and an additional circuit that is connected in parallel to at least one first acoustic wave resonator between the terminal and the terminal. The additional circuit is defined by a second acoustic wave resonator in which an electromechanical coupling coefficient of the additional circuit is different from an electromechanical coupling coefficient of the filter circuit.Type: ApplicationFiled: June 11, 2020Publication date: September 24, 2020Inventor: Masato ARAKI
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Publication number: 20200258747Abstract: There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.Type: ApplicationFiled: February 6, 2020Publication date: August 13, 2020Inventors: Kensaku NARUSHIMA, Nagayasu HIRAMATSU, Takanobu HOTTA, Atsushi MATSUMOTO, Masato ARAKI, Hideaki YAMASAKI
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Patent number: 10738892Abstract: A rotary machine includes a seal device capable of restricting a flow of a fluid in a clearance between a stationary member and a rotational member. The seal device includes a pressure loss element mounted to the stationary member, a first non-contact type seal protruding from the rotational member toward the pressure loss element and facing the pressure loss element via a first gap, and a second non-contact type seal protruding from the stationary member toward the rotational member, facing the rotational member via a second gap, and being positioned on one side of the pressure loss element in a flow direction of the fluid. The seal device also includes a contact type seal protruding from the stationary member toward the rotational member and being disposed downstream of the pressure loss element and the second non-contact type seal in the flow direction of the fluid.Type: GrantFiled: November 20, 2015Date of Patent: August 11, 2020Assignee: MITSUBISHI HITACHI POWER SYSTEMS, LTD.Inventors: Masato Araki, Yoshiyuki Okabe, Ryosuke Mito, Keita Takamura, Shinya Hashimoto
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Patent number: 10727812Abstract: A multiplexer includes a first filter connected to a common terminal and a first input/output terminal, a second filter connected to the common terminal and a second input/output terminal, a first cancel circuit including a first terminal, a second terminal acoustically connected to the first terminal, and a third terminal acoustically connected to the first terminal, and a second cancel circuit including a fourth terminal, and a fifth terminal acoustically connected to the fourth terminal. The first terminal is connected to the first input/output terminal. The second terminal is connected to the second input/output terminal. The fourth terminal is connected to the third terminal. The fifth terminal is connected to the second input/output terminal. The first and second cancel circuits generate signals that cancel out unnecessary signals in a prescribed frequency band propagating between the first and second input/output terminals.Type: GrantFiled: March 13, 2019Date of Patent: July 28, 2020Assignee: MURATA MANUFACTURING CO., LTD.Inventor: Masato Araki
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Patent number: 10670039Abstract: A rotor shaft has: an inlet flow passage through which gas inside a gas compression flow passage flows into an outer cavity of a downstream-side cavity group; a radial flow passage that provides communication between the outer cavity and an axial communication cavity of the downstream-side cavity group; an axial flow passage that provides communication between the axial communication cavity of the downstream-side cavity group and the axial communication cavity of an upstream-side cavity group; another radial flow passage that provides communication between the axial communication cavity and the outer cavity of the upstream-side cavity group; and an outlet flow passage through which the gas inside the outer cavity of the upstream-side cavity group flows out into the gas compression flow passage.Type: GrantFiled: April 18, 2016Date of Patent: June 2, 2020Assignee: MITSUBISHI HITACHI POWER SYSTEMS, LTD.Inventors: Keita Takamura, Masanori Yuri, Shinya Hashimoto, Junichiro Masada, Yuji Komagome, Masato Araki