Abstract: An organic thin film deposition device that is compact and high in processing capability is provided. Inside a vacuum chamber, first and second substrate arrangement devices that can be in a horizontal posture and a standing posture are provided; and when in the standing posture, substrates held by the respective substrate arrangement devices and first and second organic vapor discharging devices face each other. When one of the substrate arrangement devices is in the horizontal posture, masks and the substrates are lifted up by alignment pins and transfer pins and are replaced with a substrate not yet film formed, for position adjustment. With one organic thin film deposition device, two substrates can be processed at the same time.

Abstract: An organic thin film deposition device that is compact and high in processing capability is provided. Inside a vacuum chamber, first and second substrate arrangement devices that can be in a horizontal posture and a standing posture are provided; and when in the standing posture, substrates held by the respective substrate arrangement devices and first and second organic vapor discharging devices face each other. When one of the substrate arrangement devices is in the horizontal posture, masks and the substrates are lifted up by alignment pins and transfer pins and are replaced with a substrate not yet film formed, for position adjustment. With one organic thin film deposition device, two substrates can be processed at the same time.

Abstract: An organic thin film deposition device that is compact and high in processing capability is provided. Inside a vacuum chamber, first and second substrate arrangement devices that can be in a horizontal posture and a standing posture are provided; and when in the standing posture, substrates held by the respective substrate arrangement devices and first and second organic vapor discharging devices face each other. When one of the substrate arrangement devices is in the horizontal posture, masks and the substrates are lifted up by alignment pins and transfer pins and are replaced with a substrate not yet film formed, for position adjustment. With one organic thin film deposition device, two substrates can be processed at the same time.

Abstract: A technology which is capable of an accurate measurement of the film thickness even if an exfoliation occurs is provided. A difference frequency ?f0 is calculated from a resonance frequency f0 of a film thickness sensor at a current time a0 and a resonance frequency f1 at an immediate past time a1, and whether the exfoliation has occurred or not is detected from its sign and a comparison result relative to a reference value. When the exfoliation has occurred, a corrected film thickness value T? is obtained by adding the thickness ?t0 of the exfoliation film to an increased film thickness value T which is determined from a resonance frequency fx measured at a future time ax to be converted to the thickness of a film on a film forming object, and whether the formation of the film should be terminated is judged in comparison to an aimed value.

Abstract: An organic thin film deposition device that is compact and high in processing capability is provided. Inside a vacuum chamber, first and second substrate arrangement devices that can be in a horizontal posture and a standing posture are provided; and when in the standing posture, substrates held by the respective substrate arrangement devices and first and second organic vapor discharging devices face each other. When one of the substrate arrangement devices is in the horizontal posture, masks and the substrates are lifted up by alignment pins and transfer pins and are replaced with a substrate not yet film formed, for position adjustment. With one organic thin film deposition device, two substrates can be processed at the same time.

Abstract: A technology which is capable of an accurate measurement of the film thickness even if an exfoliation occurs is provided. A difference frequency ?f0 is calculated from a resonance frequency f0 of a film thickness sensor at a current time a0 and a resonance frequency f1 at an immediate past time a1, and whether the exfoliation has occurred or not is detected from its sign and a comparison result relative to a reference value. When the exfoliation has occurred, a corrected film thickness value T? is obtained by adding the thickness ?t0 of the exfoliation film to an increased film thickness value T which is determined from a resonance frequency fx measured at a future time ax to be converted to the thickness of a film on a film forming object, and whether the formation of the film should be terminated is judged in comparison to an aimed value.