Abstract: A CMP polishing slurry of the present invention, contains cerium oxide particles, a dispersant, a polycarboxylic acid, a strong acid having a pKa of its first dissociable acidic group at 3.2 or less, and water, the pH of the polishing slurry is 4.0 or more and 7.5 or less, wherein the strong acid is contained 100 to 1,000 ppm or 50 to 1,000 ppm, or the strong acid is a monovalent strong acid contained 50 to 500 ppm or is a bivalent strong acid contained 100 to 1,000 ppm. The preferable polycarboxylic acid is a polyacrylic acid. The present invention allows polishing in the CMP methods of surface-smoothening an interlayer dielectric film, a BPSG film and a shallow-trench-isolation insulation film with high speed operation efficiently and easier process management and cause smaller fluctuation in film thickness due to difference in pattern density.

Abstract: The polishing slurry of the invention is a polishing slurry for polishing a silicon oxide film on polysilicon, which contains an abrasive, polysilicon polishing inhibitor, and water. As the polishing inhibitor, it is preferable to use (1) a water-soluble polymer having a N-monosubstituted or N,N-disubstituted skeleton substituted by any member selected from the group consisting of acrylamide, methacrylamide, and ?-substituted derivatives thereof, (2) polyethylene glycol, (3) an oxyethylene adduct of an acetylene-based diol, (4) a water-soluble organic compound having an acetylene bond, (5) an alkoxylated linear aliphatic alcohol, or (6) a copolymer containing polyvinyl pyrrolidone or vinyl pyrrolidone. There is provided a polishing method which is capable of polishing a silicon oxide film on a polysilicon film at a high speed, and inhibiting the progress of polishing of a polysilicon film in exposed parts in the manufacturing method for a semiconductor.

Abstract: A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

Abstract: A dry toner composition comprising (A) a binder resin, (B) a colorant and (C) charge control agents comprising a special metal complex of oxycarboxylic acid (C-1) and a special metal complex of azo compound (C-2) can provide high quality images without causing toner flying even after printed for a long period of time, and thus is useful for providing a dry developer and a process for forming images using said dry developer.

Abstract: In an electrophotographic plate, that having an undercoating layer with smooth surface when observed by using a scanning electron microscope and an electric conductivity of at least 2.times.10.sup.-14 .OMEGA..sup.-1 .multidot.cm.sup.-1 between an electroconductive substrate and a photosensitive layer is improved in electrophotographic properties which are hardly changed by changes of circumstances.