Abstract: A semiconductor laser device includes a submount and an edge-emitting semiconductor laser chip mounted to the submount by a junction-down method. The semiconductor laser chip includes a semiconductor substrate, a stacked growth layer in which m (m?1) laser resonators are formed, m P electrodes, and an N electrode. When a beam emission direction is denoted as a z-axis, a direction of the thickness of the semiconductor substrate as a y-axis, and a direction orthogonal to the z-axis and the y-axis as an x-axis, the m laser resonators are located in an area of the stacked growth layer except directly under a center of the second face of the semiconductor substrate in the x-axis direction. More preferably, the m laser resonators are located on the side opposite to the center of the second face of the semiconductor substrate when viewed from the center of the first face thereof.

Abstract: A multi-beam semiconductor laser device includes an edge-emitting first semiconductor laser chip and an edge-emitting second semiconductor laser chip. The first semiconductor laser chip and the second semiconductor laser chip are located adjacently to each other in a first direction. The first and second semiconductor laser chips each include a semiconductor substrate and a stacked growth layer including a first conductive cladding layer, a light-emitting layer, and a second conductive cladding layer formed on the semiconductor substrate. The first and second semiconductor laser chips include m (m?1) and n (n?1) laser resonators extending in a second direction orthogonal to the first direction, respectively. The m laser resonators of the first semiconductor laser chip are disposed at a position closer to a side where the second semiconductor laser chip is located adjacently than a side where the second semiconductor laser chip is not located adjacently.

Abstract: A semiconductor laser device includes: a substrate having a main surface; a first cladding layer with a first conductive type and a second cladding layer with a second conductive type, which are stacked over the main surface of the substrate; and a light-emitting layer that is formed between the first cladding layer and the second cladding layer, and is formed on a first surface parallel to the main surface of the substrate; the light-emitting layer has a plurality of light-emitting regions emitting laser beams in a red range; and among the laser beams emitted from the light-emitting regions, the difference between a peak wavelength in an optical spectrum of at least one laser beam and a peak wavelength in an optical spectrum of the other laser beams is 1.5 nm or more.

Abstract: A semiconductor laser device includes: a substrate having a main surface; a first cladding layer with a first conductive type and a second cladding layer with a second conductive type different from the first conductive type, which are stacked over the main surface of the substrate; and a light-emitting layer that is formed between the first cladding layer and the second cladding layer, and is formed on a first surface parallel to the main surface of the substrate; the light-emitting layer has a plurality of light-emitting regions emitting laser beams in a red range; and values of peak wavelengths in an optical spectrum of the laser beams, which are emitted from the light-emitting regions, are different in accordance with the thickness of the light-emitting layer from the first surface.

Abstract: Disclosed herein is a semiconductor laser device utilizing a sub-mount substrate that is capable of having a further sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline sub-mount substrate having a crystalline structure including a first crystalline plane (c-plane) having a normal line direction on a first crystalline axis (c-axis) and a second crystalline plane (a-plane) having a normal line direction on a second crystalline axis (a-axis) having a higher thermal conductivity than the first crystalline axis; and a semiconductor laser chip configured to be joined to a side of a first surface of the sub-mount substrate. The first crystalline plane inclines with respect to the first surface of the sub-mount substrate.

Abstract: Disclosed herein is a semiconductor laser device utilizing a monocrystalline SiC substrate that is capable of assuring a sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline SiC substrate having an electrical conductivity, the substrate having a first surface and a second surface; and a semiconductor laser chip (LD chip) arranged on the first surface. Also, the semiconductor laser device may comprise an insulating film arranged at a side of the first surface of the SiC substrate and configured to insulate a first electric conductive layer onto which the semiconductor laser chip is mounted and an electric conductive member (a second electric conductive layer and a heatsink portion) to be joined to a side of the second surface of the SiC substrate.

Abstract: Disclosed herein is a semiconductor laser device that has a higher heat dissipation property, comprising: a base; a block protruding from a first surface of the base; a laser chip being joined onto a side face rising upward from the first surface, and allowing heat generated to be transferred to the block; a cap covering the block and be fixed on the first surface; a window provided in the cap and allowing the light emitted from the laser chip to pass through; at least one lead pin penetrating the base, one end of the lead pin protruding inside the cap, and any of the lead pin being positioned at an opposite side of the block with respect to the laser chip; and a pinless region extending in a range of the base corresponding to a rear side of the block and provided with none of pins including the lead pin.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: Disclosed herein is a semiconductor laser device utilizing a sub-mount substrate that is capable of having a further sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline sub-mount substrate having a crystalline structure including a first crystalline plane (c-plane) having a normal line direction on a first crystalline axis (c-axis) and a second crystalline plane (a-plane) having a normal line direction on a second crystalline axis (a-axis) having a higher thermal conductivity than the first crystalline axis; and a semiconductor laser chip configured to be joined to a side of a first surface of the sub-mount substrate. The first crystalline plane inclines with respect to the first surface of the sub-mount substrate.

Abstract: Disclosed herein is a semiconductor laser device utilizing a monocrystalline SiC substrate that is capable of assuring a sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline SiC substrate having an electrical conductivity, the substrate having a first surface and a second surface; and a semiconductor laser chip (LD chip) arranged on the first surface. Also, the semiconductor laser device may comprise an insulating film arranged at a side of the first surface of the SiC substrate and configured to insulate a first electric conductive layer onto which the semiconductor laser chip is mounted and an electric conductive member (a second electric conductive layer and a heatsink portion) to be joined to a side of the second surface of the SiC substrate.

Abstract: A semiconductor laser element includes an inclined substrate, a semiconductor layer formed on one surface of the substrate, a first electrode (n-type electrode) formed on an opposite surface of the substrate, a second electrode (p-type electrode) formed on the semiconductor layer, and a current constriction part formed in the semiconductor layer. The semiconductor layer has a multi-layer structure including at least an active layer. The current constriction part causes a current to concentrate and flow to a particular area of the active layer. The first electrode or the second electrode is joined to a sub-mount. In one embodiment, the location of the current constriction part in a chip width direction is between the center of one of the first and second electrodes, which is joined to the sub-mount, and the center of the other electrode, which is not joined to the sub-mount, when viewed in the chip width direction.

Abstract: Disclosed herein is a semiconductor laser device that has a higher heat dissipation property, comprising: a base; a block protruding from a first surface of the base; a laser chip being joined onto a side face rising upward from the first surface, and allowing heat generated to be transferred to the block; a cap covering the block and be fixed on the first surface; a window provided in the cap and allowing the light emitted from the laser chip to pass through; at least one lead pin penetrating the base, one end of the lead pin protruding inside the cap, and any of the lead pin being positioned at an opposite side of the block with respect to the laser chip; and a pinless region extending in a range of the base corresponding to a rear side of the block and provided with none of pins including the lead pin.

Abstract: A semiconductor laser element includes an inclined substrate, a semiconductor layer formed on one surface of the substrate, a first electrode (n-type electrode) formed on an opposite surface of the substrate, a second electrode (p-type electrode) formed on the semiconductor layer, and a current constriction part formed in the semiconductor layer. The semiconductor layer has a multi-layer structure including at least an active layer. The current constriction part causes a current to concentrate and flow to a particular area of the active layer. The first electrode or the second electrode is joined to a sub-mount. In one embodiment, the location of the current constriction part in a chip width direction is between the center of one of the first and second electrodes, which is joined to the sub-mount, and the center of the other electrode, which is not joined to the sub-mount, when viewed in the chip width direction.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1?x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1?xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1?xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxGa1-x)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: A semiconductor laser diode device with small driving current and no distortion in the projected image.

Abstract: An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.

Abstract: An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than 50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.

Abstract: An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.