Patents by Inventor Masato Hagimoto

Masato Hagimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220209508
    Abstract: A semiconductor laser device includes: a substrate having a main surface; a first cladding layer with a first conductive type and a second cladding layer with a second conductive type, which are stacked over the main surface of the substrate; and a light-emitting layer that is formed between the first cladding layer and the second cladding layer, and is formed on a first surface parallel to the main surface of the substrate; the light-emitting layer has a plurality of light-emitting regions emitting laser beams in a red range; and among the laser beams emitted from the light-emitting regions, the difference between a peak wavelength in an optical spectrum of at least one laser beam and a peak wavelength in an optical spectrum of the other laser beams is 1.5 nm or more.
    Type: Application
    Filed: December 22, 2021
    Publication date: June 30, 2022
    Applicant: Ushio Denki Kabushiki Kaisha
    Inventors: Masato Hagimoto, Tadashi Okumura, Yutaka Inoue
  • Publication number: 20220209507
    Abstract: A semiconductor laser device includes: a substrate having a main surface; a first cladding layer with a first conductive type and a second cladding layer with a second conductive type different from the first conductive type, which are stacked over the main surface of the substrate; and a light-emitting layer that is formed between the first cladding layer and the second cladding layer, and is formed on a first surface parallel to the main surface of the substrate; the light-emitting layer has a plurality of light-emitting regions emitting laser beams in a red range; and values of peak wavelengths in an optical spectrum of the laser beams, which are emitted from the light-emitting regions, are different in accordance with the thickness of the light-emitting layer from the first surface.
    Type: Application
    Filed: December 22, 2021
    Publication date: June 30, 2022
    Applicant: Ushio Denki Kabushiki Kaisha
    Inventors: Yutaka Inoue, Masato Hagimoto, Tadashi Okumura
  • Patent number: 11114817
    Abstract: Disclosed herein is a semiconductor laser device utilizing a sub-mount substrate that is capable of having a further sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline sub-mount substrate having a crystalline structure including a first crystalline plane (c-plane) having a normal line direction on a first crystalline axis (c-axis) and a second crystalline plane (a-plane) having a normal line direction on a second crystalline axis (a-axis) having a higher thermal conductivity than the first crystalline axis; and a semiconductor laser chip configured to be joined to a side of a first surface of the sub-mount substrate. The first crystalline plane inclines with respect to the first surface of the sub-mount substrate.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: September 7, 2021
    Assignee: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Masato Hagimoto, Hironori Yanagisawa, Tomonobu Tsuchiya
  • Patent number: 10840671
    Abstract: Disclosed herein is a semiconductor laser device utilizing a monocrystalline SiC substrate that is capable of assuring a sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline SiC substrate having an electrical conductivity, the substrate having a first surface and a second surface; and a semiconductor laser chip (LD chip) arranged on the first surface. Also, the semiconductor laser device may comprise an insulating film arranged at a side of the first surface of the SiC substrate and configured to insulate a first electric conductive layer onto which the semiconductor laser chip is mounted and an electric conductive member (a second electric conductive layer and a heatsink portion) to be joined to a side of the second surface of the SiC substrate.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: November 17, 2020
    Assignee: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Masato Hagimoto, Susumu Sorimachi, Tomonobu Tsuchiya
  • Patent number: 10804675
    Abstract: Disclosed herein is a semiconductor laser device that has a higher heat dissipation property, comprising: a base; a block protruding from a first surface of the base; a laser chip being joined onto a side face rising upward from the first surface, and allowing heat generated to be transferred to the block; a cap covering the block and be fixed on the first surface; a window provided in the cap and allowing the light emitted from the laser chip to pass through; at least one lead pin penetrating the base, one end of the lead pin protruding inside the cap, and any of the lead pin being positioned at an opposite side of the block with respect to the laser chip; and a pinless region extending in a range of the base corresponding to a rear side of the block and provided with none of pins including the lead pin.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: October 13, 2020
    Assignee: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Yasushi Takizawa, Masato Hagimoto, Shintaro Miyamoto
  • Patent number: 10170891
    Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: January 1, 2019
    Assignee: USHIO OPTO SEMICONDUCTORS, INC.
    Inventors: Masato Hagimoto, Haruki Fukai, Tsutomu Kiyosumi, Shinji Sasaki, Satoshi Kawanaka
  • Publication number: 20180278016
    Abstract: Disclosed herein is a semiconductor laser device utilizing a sub-mount substrate that is capable of having a further sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline sub-mount substrate having a crystalline structure including a first crystalline plane (c-plane) having a normal line direction on a first crystalline axis (c-axis) and a second crystalline plane (a-plane) having a normal line direction on a second crystalline axis (a-axis) having a higher thermal conductivity than the first crystalline axis; and a semiconductor laser chip configured to be joined to a side of a first surface of the sub-mount substrate. The first crystalline plane inclines with respect to the first surface of the sub-mount substrate.
    Type: Application
    Filed: March 26, 2018
    Publication date: September 27, 2018
    Applicant: USHIO OPTO SEMICONDUCTORS, INC.
    Inventors: Masato HAGIMOTO, Hironori YANAGISAWA, Tomonobu TSUCHIYA
  • Publication number: 20180278015
    Abstract: Disclosed herein is a semiconductor laser device utilizing a monocrystalline SiC substrate that is capable of assuring a sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline SiC substrate having an electrical conductivity, the substrate having a first surface and a second surface; and a semiconductor laser chip (LD chip) arranged on the first surface. Also, the semiconductor laser device may comprise an insulating film arranged at a side of the first surface of the SiC substrate and configured to insulate a first electric conductive layer onto which the semiconductor laser chip is mounted and an electric conductive member (a second electric conductive layer and a heatsink portion) to be joined to a side of the second surface of the SiC substrate.
    Type: Application
    Filed: March 26, 2018
    Publication date: September 27, 2018
    Applicant: USHIO OPTO SEMICONDUCTORS, INC.
    Inventors: Masato HAGIMOTO, Susumu SORIMACHI, Tomonobu TSUCHIYA
  • Patent number: 9692204
    Abstract: A semiconductor laser element includes an inclined substrate, a semiconductor layer formed on one surface of the substrate, a first electrode (n-type electrode) formed on an opposite surface of the substrate, a second electrode (p-type electrode) formed on the semiconductor layer, and a current constriction part formed in the semiconductor layer. The semiconductor layer has a multi-layer structure including at least an active layer. The current constriction part causes a current to concentrate and flow to a particular area of the active layer. The first electrode or the second electrode is joined to a sub-mount. In one embodiment, the location of the current constriction part in a chip width direction is between the center of one of the first and second electrodes, which is joined to the sub-mount, and the center of the other electrode, which is not joined to the sub-mount, when viewed in the chip width direction.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: June 27, 2017
    Assignee: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Masato Hagimoto, Shintaro Miyamoto, Koichi Kozu
  • Publication number: 20170093123
    Abstract: Disclosed herein is a semiconductor laser device that has a higher heat dissipation property, comprising: a base; a block protruding from a first surface of the base; a laser chip being joined onto a side face rising upward from the first surface, and allowing heat generated to be transferred to the block; a cap covering the block and be fixed on the first surface; a window provided in the cap and allowing the light emitted from the laser chip to pass through; at least one lead pin penetrating the base, one end of the lead pin protruding inside the cap, and any of the lead pin being positioned at an opposite side of the block with respect to the laser chip; and a pinless region extending in a range of the base corresponding to a rear side of the block and provided with none of pins including the lead pin.
    Type: Application
    Filed: September 22, 2016
    Publication date: March 30, 2017
    Applicant: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Yasushi TAKIZAWA, Masato HAGIMOTO, Shintaro MIYAMOTO
  • Publication number: 20170077674
    Abstract: A semiconductor laser element includes an inclined substrate, a semiconductor layer formed on one surface of the substrate, a first electrode (n-type electrode) formed on an opposite surface of the substrate, a second electrode (p-type electrode) formed on the semiconductor layer, and a current constriction part formed in the semiconductor layer. The semiconductor layer has a multi-layer structure including at least an active layer. The current constriction part causes a current to concentrate and flow to a particular area of the active layer. The first electrode or the second electrode is joined to a sub-mount. In one embodiment, the location of the current constriction part in a chip width direction is between the center of one of the first and second electrodes, which is joined to the sub-mount, and the center of the other electrode, which is not joined to the sub-mount, when viewed in the chip width direction.
    Type: Application
    Filed: September 13, 2016
    Publication date: March 16, 2017
    Applicant: USHIO DENKI KABUSHIKI KAISHA
    Inventors: Masato HAGIMOTO, Shintaro MIYAMOTO, Koichi KOZU
  • Publication number: 20170012410
    Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.
    Type: Application
    Filed: July 15, 2016
    Publication date: January 12, 2017
    Inventors: Masato HAGIMOTO, Haruki FUKAI, Tsutomu KIYOSUMI, Shinji SASAKI, Satoshi KAWANAKA
  • Patent number: 9425583
    Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1?x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1?xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1?xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: August 23, 2016
    Assignee: USHIO OPTO SEMICONDUCTORS, INC.
    Inventors: Masato Hagimoto, Haruki Fukai, Tsutomu Kiyosumi, Shinji Sasaki, Satoshi Kawanaka
  • Publication number: 20150003483
    Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxGa1-x)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.
    Type: Application
    Filed: September 18, 2014
    Publication date: January 1, 2015
    Inventors: Masato HAGIMOTO, Haruki FUKAI, Tsutomu KIYOSUMI, Shinji SASAKI, Satoshi KAWANAKA
  • Patent number: 7746910
    Abstract: A semiconductor laser diode device with small driving current and no distortion in the projected image.
    Type: Grant
    Filed: January 31, 2008
    Date of Patent: June 29, 2010
    Assignee: Opnext Japan, Inc.
    Inventors: Satoshi Kawanaka, Atsushi Nakamura, Masato Hagimoto, Hideki Hara, Masakatsu Yamamoto
  • Patent number: 7720127
    Abstract: An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
    Type: Grant
    Filed: September 22, 2008
    Date of Patent: May 18, 2010
    Assignee: OpNext Japan, Inc.
    Inventors: Yutaka Inoue, Kazunori Saitoh, Hiroshi Hamada, Masato Hagimoto, Susumu Sorimachi
  • Publication number: 20090041076
    Abstract: An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than 50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
    Type: Application
    Filed: September 22, 2008
    Publication date: February 12, 2009
    Inventors: Yutaka Inoue, Kazunori Saitoh, Hiroshi Hamada, Masato Hagimoto, Susumu Sorimachi
  • Patent number: 7443901
    Abstract: An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
    Type: Grant
    Filed: March 24, 2006
    Date of Patent: October 28, 2008
    Assignee: OpNext Japan, Inc.
    Inventors: Yutaka Inoue, Kazunori Saitoh, Hiroshi Hamada, Masato Hagimoto, Susumu Sorimachi
  • Publication number: 20080181276
    Abstract: A semiconductor laser diode device with small driving current and no distortion in the projected image.
    Type: Application
    Filed: January 31, 2008
    Publication date: July 31, 2008
    Inventors: Satoshi Kawanaka, Atsushi Nakamura, Masato Hagimoto, Hideki Hara, Masakatsu Yamamoto
  • Publication number: 20060222031
    Abstract: An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
    Type: Application
    Filed: March 24, 2006
    Publication date: October 5, 2006
    Inventors: Yutaka Inoue, Kazunori Saitoh, Hiroshi Hamada, Masato Hagimoto, Susumu Sorimachi