Patents by Inventor Masato Ishimaru
Masato Ishimaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9972776Abstract: According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.Type: GrantFiled: September 9, 2016Date of Patent: May 15, 2018Assignee: Hitachi High-Technologies CorporationsInventors: Makoto Suyama, Naohiro Yamamoto, Masato Ishimaru, Hidenori Toyooka, Norihiro Hosaka
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Publication number: 20170194561Abstract: According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.Type: ApplicationFiled: September 9, 2016Publication date: July 6, 2017Inventors: Makoto SUYAMA, Naohiro YAMAMOTO, Masato ISHIMARU, Hidenori TOYOOKA, Norihiro HOSAKA
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Patent number: 9680090Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.Type: GrantFiled: January 14, 2016Date of Patent: June 13, 2017Assignee: Hitachi High-Technologies CorporationInventors: Daisuke Fujita, Makoto Suyama, Naohiro Yamamoto, Masato Ishimaru, Kentaro Yamada
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Patent number: 9506154Abstract: A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched. A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.Type: GrantFiled: November 19, 2014Date of Patent: November 29, 2016Assignee: Hitachi High-Technologies CorporationInventors: Masato Ishimaru, Takeshi Shimada, Makoto Suyama, Takahiro Abe
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Patent number: 9449842Abstract: A plasma etching method for plasma etching a film to be etched to a size smaller than a prescribed size using a mask patterned to the prescribed size performs etching on the film to be etched to the size smaller than the prescribed size while forming a protection film on side walls of the film to be etched.Type: GrantFiled: July 31, 2014Date of Patent: September 20, 2016Assignee: Hitachi High-Technologies CorporationInventors: Masato Ishimaru, Takahiro Abe, Makoto Suyama, Takeshi Shimada
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Publication number: 20160138170Abstract: A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched. A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.Type: ApplicationFiled: November 19, 2014Publication date: May 19, 2016Inventors: Masato ISHIMARU, Takeshi SHIMADA, Makoto SUYAMA, Takahiro ABE
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Publication number: 20160133834Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.Type: ApplicationFiled: January 14, 2016Publication date: May 12, 2016Inventors: Daisuke Fujita, Makoto Suyama, Naohiro Yamamoto, Masato Ishimaru, Kentaro Yamada
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Patent number: 9281470Abstract: In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.Type: GrantFiled: July 31, 2014Date of Patent: March 8, 2016Assignee: Hitachi High-Technologies CorporationInventors: Takahiro Abe, Naohiro Yamamoto, Makoto Suyama, Masato Ishimaru
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Patent number: 9269892Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.Type: GrantFiled: February 14, 2014Date of Patent: February 23, 2016Assignee: Hitachi High-Technologies CorporationInventors: Daisuke Fujita, Makoto Suyama, Naohiro Yamamoto, Masato Ishimaru, Kentaro Yamada
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Publication number: 20150349245Abstract: In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.Type: ApplicationFiled: July 31, 2014Publication date: December 3, 2015Inventors: Takahiro Abe, Naohiro Yamamoto, Makoto Suyama, Masato Ishimaru
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Publication number: 20150194315Abstract: A plasma etching method for plasma etching a film to be etched to a size smaller than a prescribed size using a mask patterned to the prescribed size performs etching on the film to be etched to the size smaller than the prescribed size while forming a protection film on side walls of the film to be etched.Type: ApplicationFiled: July 31, 2014Publication date: July 9, 2015Inventors: Masato Ishimaru, Takahiro Abe, Makoto Suyama, Takeshi Shimada
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Publication number: 20150017741Abstract: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.Type: ApplicationFiled: February 14, 2014Publication date: January 15, 2015Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Daisuke Fujita, Makoto Suyama, Naohiro Yamamoto, Masato Ishimaru, Kentaro Yamada
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Publication number: 20130048599Abstract: The present invention provides a method for stably generating cleaning plasma regardless of a condition of CO-containing plasma. When a magnetic film formed on a wafer 802 to be etched is processed with the CO-containing plasma which is generated by applying a source electric power to a CO-containing gas containing elements of C and O, which has been introduced into a vacuum chamber 801, to convert the CO-containing gas into a plasma state, the method includes: applying predetermined processing to the magnetic film formed on the wafer 802 to be etched by using the CO-containing plasma; then introducing a cleaning gas into the vacuum chamber in a state of applying the source electric power 806 to the antenna; and then stopping the introduction of the CO-containing gas into the vacuum chamber to thereby generate the cleaning plasma with the use of a predetermined cleaning gas.Type: ApplicationFiled: February 1, 2012Publication date: February 28, 2013Inventors: Makoto SATAKE, Makoto Suyama, Masato Ishimaru, Yasukiyo Morioka