Patents by Inventor Masato Iwabuchi

Masato Iwabuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11972589
    Abstract: The image processing device comprises: a storage section storing a three-dimensional shape model in which feature amounts and three-dimensional positional information, for multiple feature points of a target object, are associated; an extraction process section configured to extract the feature amounts and two-dimensional positional information of the feature points from a two-dimensional image of the target object captured with a camera; and a recognition process section configured to identify three-dimensional positional information of the feature points of the two-dimensional image and recognize the position and orientation of the target object by matching the feature points of the two-dimensional image with the feature points of the three-dimensional model using the feature amounts.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: April 30, 2024
    Assignee: FUJI CORPORATION
    Inventors: Masafumi Amano, Nobuo Oishi, Takato Namekata, Masato Iwabuchi
  • Publication number: 20220092330
    Abstract: The image processing device comprises: a storage section storing a three-dimensional shape model in which feature amounts and three-dimensional positional information, for multiple feature points of a target object, are associated; an extraction process section configured to extract the feature amounts and two-dimensional positional information of the feature points from a two-dimensional image of the target object captured with a camera; and a recognition process section configured to identify three-dimensional positional information of the feature points of the two-dimensional image and recognize the position and orientation of the target object by matching the feature points of the two-dimensional image with the feature points of the three-dimensional model using the feature amounts.
    Type: Application
    Filed: January 9, 2019
    Publication date: March 24, 2022
    Applicant: FUJI CORPORATION
    Inventors: Masafumi AMANO, Nobuo OISHI, Takato NAMEKATA, Masato IWABUCHI
  • Publication number: 20170153842
    Abstract: In one example, the disclosure is directed to a method comprising receiving, by a controller of a hard disk drive, a request to write a data block to a data storage platter of the hard disk drive. The data storage platter of the hard disk drive includes at least one random access zone and at least one sequential access zone. The controller determines a hinting value for the data block based on hinting information of the data block. The controller further determines, based at least in part on the hinting value, a location of the data storage platter of the hard disk at which to write the data block. The location includes one of the at least one random access zone or one of the at least one sequential access zone. The controller writes the data block at the location.
    Type: Application
    Filed: December 1, 2015
    Publication date: June 1, 2017
    Inventor: Masato Iwabuchi
  • Patent number: 5481484
    Abstract: A mixed mode simulation method and apparatus are provided for highly accurately simulating the total characteristics of a digital analyzed circuit portion and an analog analyzed circuit portion, which are both subjected to mixed mode simulation, in consideration of the influence exerted on the analog analyzed circuit portion by a current consumed by the digital analyzed circuit portion. More particularly, a current value of an equivalent circuit for current calculation modeled for providing the analog analyzed circuit portion with a current generated due to an operating state of the digital analyzed circuit portion realized by logic simulation is determined in synchronism with the logic simulation, and the equivalent circuit for current calculation derived thereby is composed with the analog analyzed circuit portion, and this composite circuit is subjected to circuit simulation.
    Type: Grant
    Filed: September 28, 1992
    Date of Patent: January 2, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Munehiro Ogawa, deceased, Masato Iwabuchi, Hitoshi Sugihara, Saburo Hojo, Masami Kinoshita, Osamu Yamashiro, Goichi Yokomizo, Mikako Miyama
  • Patent number: 5477067
    Abstract: In a gate array with a RAM which is disposed between first and second logic circuit blocks each of which having plural logic gates, by-pass signal lines which interconnect the logic circuit blocks are disposed so as to extend above the RAM. In order to minimize mutual interference, signal lines, such as word lines of the RAM, formed from a layer which is adjacent to the by-pass signal lines are disposed, with respect to a plan view layout arrangement of the main surface of a chip, so as to intersect the latter at right angles. In addition, interconnection pitches of signal lines in different wiring layers which extend parallel with each other are set so that noises are cancelled in differential sense circuits.
    Type: Grant
    Filed: August 31, 1993
    Date of Patent: December 19, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Satoru Isomura, Masato Iwabuchi, Katsumi Ogiue
  • Patent number: 5399912
    Abstract: A hold-type latch circuit which features an increased operation margin. A feedback circuit feeds the data output logic state of a non-inversion data output terminal of the latch circuit back to a data input terminal thereof, to increase a margin in the setup time ts and holding time th in controlling the data holding capability of the latch circuit, thereby to increase the margin of thereof.
    Type: Grant
    Filed: January 5, 1993
    Date of Patent: March 21, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Shigeharu Murata, Takasi Oomori, Masami Usami, Masato Iwabuchi
  • Patent number: 5388073
    Abstract: A semiconductor memory device for use in a digital data processor together with a central processing unit (CPU) receives address signals which are validated for a time period n times as long as the machine cycle of the CPU, and it stores therein input data items which are validated for a cycle equal to the machine cycle of the CPU or delivers therefrom output data items which are validated for a cycle equal to the machine cycle of the CPU.
    Type: Grant
    Filed: April 15, 1991
    Date of Patent: February 7, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Masami Usami, Akihisa Uchida, Yoshino Sakai, Masato Iwabuchi
  • Patent number: 5243208
    Abstract: In a gate array with a RAM, by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array are disposed so as to extend above the RAM. In order to minimize mutual interference, signal lines formed from a layer which is adjacent to the by-pass signal lines are disposed so as to intersect the latter at right angles. In addition, interconnection pitches in different layer which extend parallel with each other are set so that noises are canceled in differential sense circuits.
    Type: Grant
    Filed: March 17, 1992
    Date of Patent: September 7, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Satoru Isomura, Masato Iwabuchi, Katsumi Ogiue
  • Patent number: 5103282
    Abstract: In a gate array with a RAM, by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array are disposed so as to extend above the RAM. In order to minimize mutual interference, signal lines formed from a layer which is adjacent to the by-pass signal lines are disposed so as to intersect the latter at right angles. In addition, interconnection pitches in different layers which extend parallel with each other are set so that noises are cancelled in differential sense circuits.
    Type: Grant
    Filed: September 10, 1990
    Date of Patent: April 7, 1992
    Assignee: Hitachi, Ltd.
    Inventors: Satoru Isomura, Masato Iwabuchi, Katsumi Ogiue
  • Patent number: 4970687
    Abstract: A bipolar type RAM having latches which accept and hold address signals, input write data and a write enable signal supplied from outside of the corresponding RAM chip, in accordance with strobe signals, and a timing generator circuit which forms the strobe signals and a write pulse required for a write operation and satisfying predetermined timing conditions, on the basis of a chip select signal supplied from outside.
    Type: Grant
    Filed: June 8, 1988
    Date of Patent: November 13, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Masami Usami, Kazuhiro Akimoto, Takeo Uchiyama, Masato Iwabuchi
  • Patent number: 4959704
    Abstract: In a gate array with a RAM, by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array are disposed so as to extend above the RAM. In order to minimize mutual interference, signal lines formed from a layer which is adjacent to the by-pass signal lines are disposed so as to intersect the latter at right angles. In addition, interconnection pitches in different layers which extend parallel with each other are set so that noises are canceled in differential sense circuits.
    Type: Grant
    Filed: May 25, 1988
    Date of Patent: September 25, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Satoru Isomura, Masato Iwabuchi, Katsumi Ogiue
  • Patent number: 4219369
    Abstract: The invention relates to a method of making a semiconductor integrated circuit device, and aims at diminishing the size of the isolating region which isolates the adjacent semiconductor elements from each other. The method of the invention has the steps of forming on a substrate a deposition layer of diffused impurities of different conductivity type from that of the substrate, forming a masking film having apertures on the deposition layer, effecting an etching through making use of the masking film as the diffusion mask, so as to etch the portions of the deposition layer and the substrate under the apertures, thereby to form grooves which divide the deposition layer into island-like deposition layer sections, and stretching and diffusing the impurities in each island-like deposition layer section to form a diffusion layer which constitutes a part of a semiconductor element.
    Type: Grant
    Filed: August 4, 1978
    Date of Patent: August 26, 1980
    Assignee: Hitachi, Ltd.
    Inventors: Katsumi Ogiue, Takahisa Nitta, Kazumichi Mitsusada, Masato Iwabuchi, Masanori Odaka