Abstract: To provide a moisture control module which has a function to reduce or increase moisture in a gas permitted to flow in a hollow fiber and which is substantially free from air leakage and easy to produce; a process for producing such a moisture control module; and an apparatus for producing such a moisture control module. A moisture control module comprising a tubular hollow fiber 1, a braid fiber 3 plaited into a braid to cover the exterior of the hollow fiber 1, and a pipe 5 inserted in an end of the hollow fiber 1, wherein as the hollow fiber 1 and the braid fiber 3 present in a region with a prescribed length from said end have been heated at a prescribed temperature from outside, the braid fiber 3 is fused, and at the same time, the hollow fiber 1 is fixed by heat shrinkage to the pipe 5.

Abstract: To provide a moisture control module which has a function to reduce or increase moisture in a gas permitted to flow in a hollow fiber and which is substantially free from air leakage and easy to produce; a process for producing such a moisture control module; and an apparatus for producing such a moisture control module. A moisture control module comprising a tubular hollow fiber 1, a braid fiber 3 plaited into a braid to cover the exterior of the hollow fiber 1, and a pipe 5 inserted in an end of the hollow fiber 1, wherein as the hollow fiber 1 and the braid fiber 3 present in a region with a prescribed length from said end have been heated at a prescribed temperature from outside, the braid fiber 3 is fused, and at the same time, the hollow fiber 1 is fixed by heat shrinkage to the pipe 5.

Abstract: An object of this invention is to provide an electron beam lithography system capable of rapidly creating an accurate exposure map for proximity effect correction. The inventive system creates the map by dividing shot figures by mesh and adding up the divided area values for each mesh. The system comprises: (1) a function for judging and dividing boundaries of shots to be rendered based on mesh positions as well as shot positions and figures in the map, and (2) a function for calculating divided shot area values and adding the values simultaneously to adjacent addresses in cumulative fashion in a plurality of memories furnished downstream of the system.

Abstract: The subject that should be solved in the present invention is to improve throughput of electron beam lithography apparatus or electron beam lithography system and lithography method used therefor. The electron beam lithography apparatus by the present invention comprises a lithography data generation part, an exposure map implementation part, and plurality of lithography data generation parts, thereby several exposure maps which are different in condition and type, are implemented in parallel. Moreover, the electron beam lithography apparatus by present invention has a construction to compare outputs from the lithography data generation parts. Moreover, the electron beam lithography system by present invention has a construction to use lithography data formed with the lithography data generation parts of one of the electron beam lithography apparatuses with other of the electron beam lithography apparatuses.

Abstract: The subject that should be solved in the present invention is to improve throughput of electron beam lithography apparatus or electron beam lithography system and lithography method used therefor. The electron beam lithography apparatus by the present invention comprises a lithography data generation part, an exposure map implementation part, and plurality of lithography data generation parts, thereby several exposure maps which are different in condition and type, are implemented in parallel. Moreover, the electron beam lithography apparatus by present invention has a construction to compare outputs from the lithography data generation parts. Moreover, the electron beam lithography system by present invention has a construction to use lithography data formed with the lithography data generation parts of one of the electron beam lithography apparatuses with other of the electron beam lithography apparatuses.