Patents by Inventor Masato Kamiichi
Masato Kamiichi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7309657Abstract: Provided is a method for manufacturing a circuit board including an electrode wiring formed above a surface portion of a substrate, and a plurality of electrothermal converting elements which have a heating resistor film for generating thermal energy formed above the electrode wiring. The method includes: forming an electrode wiring layer for forming the electrode wiring, forming the heating resistor film; and collectively etching the electrode wiring layer and the heating resistor film to thereby form the electrode wiring. With the method according to the present invention, the circuit board can be manufactured with a higher density, higher endurance, and lower power consumption recording head to provide high resolution images.Type: GrantFiled: August 31, 2004Date of Patent: December 18, 2007Assignee: Canon Kabushiki KaishaInventors: Masato Kamiichi, Keiichi Sasaki
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Patent number: 7270398Abstract: A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.Type: GrantFiled: October 21, 2004Date of Patent: September 18, 2007Assignee: Canon Kabushiki KaishaInventors: Keiichi Sasaki, Masato Kamiichi, Ershad Ali Chowdhury, Yukihiro Hayakawa
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Patent number: 7270759Abstract: A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.Type: GrantFiled: November 15, 2005Date of Patent: September 18, 2007Assignee: Canon Kabushiki KaishaInventors: Yukihiro Hayakawa, Genzo Momma, Masato Kamiichi
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Patent number: 7244370Abstract: In order to provide a circuit substrate with a satisfactory step coverage by the protective layer and the anti-cavitation film in an edge portion of wirings and a liquid discharge head utilizing such circuit substrate, the invention provides a method for producing a circuit substrate provided, on an insulating surface of a substrate, with a plurality of elements each including a resistive layer and a pair of electrodes formed with a predetermined spacing on said resistive layer, including a step of forming an aluminum electrode wiring layer on the resistive layer, a step of isolating the electrode wiring layer by dry etching into each element, and a step of forming the electrode wiring into a tapered cross section with an etching solution containing phosphoric acid, nitric acid and a chelating agent capable of forming a complex with the wiring metal.Type: GrantFiled: August 4, 2004Date of Patent: July 17, 2007Assignee: Canon Kabushiki KaishaInventors: Keiichi Sasaki, Masato Kamiichi, Yukihiro Hayakawa, Ershad Ali Chowdhury
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Publication number: 20060068570Abstract: A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.Type: ApplicationFiled: November 15, 2005Publication date: March 30, 2006Applicant: CANON KABUSHIKI KAISHAInventors: Yukihiro Hayakawa, Genzo Momma, Masato Kamiichi
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Patent number: 7018020Abstract: A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.Type: GrantFiled: October 16, 2002Date of Patent: March 28, 2006Assignee: Canon Kabushiki KaishaInventors: Yukihiro Hayakawa, Genzo Monma, Masato Kamiichi
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Publication number: 20050078152Abstract: A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.Type: ApplicationFiled: October 21, 2004Publication date: April 14, 2005Applicant: Canon Kabushiki KaishaInventors: Keiichi Sasaki, Masato Kamiichi, Ershad Chowdhury, Yukihiro Hayakawa
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Publication number: 20050053774Abstract: Provided is a method for manufacturing a circuit board including an electrode wiring formed above a surface portion of a substrate, and a plurality of electrothermal converting elements which have a heating resistor film for generating thermal energy formed above the electrode wiring. The method includes: forming an electrode wiring layer for forming the electrode wiring, forming the heating resistor film; and collectively etching the electrode wiring layer and the heating resistor film to thereby form the electrode wiring. With the method according to the present invention, the circuit board can be manufactured with a higher density, higher endurance, and lower power consumption recording head to provide high resolution images.Type: ApplicationFiled: August 31, 2004Publication date: March 10, 2005Applicant: Canon Kabushiki KaishaInventors: Masato Kamiichi, Keiichi Sasaki
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Publication number: 20050031996Abstract: In order to provide a circuit substrate with a satisfactory step coverage by the protective layer and the anti-cavitation film in an edge portion of wirings and a liquid discharge head utilizing such circuit substrate, the invention provides a method for producing a circuit substrate provided, on an insulating surface of a substrate, with a plurality of elements each including a resistive layer and a pair of electrodes formed with a predetermined spacing on said resistive layer, including a step of forming an aluminum electrode wiring layer on the resistive layer, a step of isolating the electrode wiring layer by dry etching into each element, and a step of forming the electrode wiring into a tapered cross section with an etching solution containing phosphoric acid, nitric acid and a chelating agent capable of forming a complex with the wiring metal.Type: ApplicationFiled: August 4, 2004Publication date: February 10, 2005Applicant: Canon Kabushiki KaishaInventors: Keiichi Sasaki, Masato Kamiichi, Yukihiro Hayakawa, Ershad Chowdhury
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Patent number: 6838351Abstract: A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.Type: GrantFiled: March 22, 2004Date of Patent: January 4, 2005Assignee: Canon Kabushiki KaishaInventors: Keiichi Sasaki, Masato Kamiichi, Ershad Ali Chowdhury, Yukihiro Hayakawa
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Publication number: 20040191982Abstract: A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.Type: ApplicationFiled: March 22, 2004Publication date: September 30, 2004Applicant: CANON KABUSHIKI KAISHAInventors: Keiichi Sasaki, Masato Kamiichi, Ershad Ali Chowdhury, Yukihiro Hayakawa
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Publication number: 20030080359Abstract: A structure is constructed with a through hole in a substrate of silicon or the like by the decreased number of steps in production and with improved reliability. A silicon nitride film 104 is formed in contact with an upper surface of a silicon oxide film 103 at least in a side portion of a through hole 120, thereby improving step coverage of the silicon nitride film 104. The silicon oxide film 103 and silicon nitride film 104 function as a membrane during formation of the through hole 120 by etching from the back side of substrate 100.Type: ApplicationFiled: October 16, 2002Publication date: May 1, 2003Applicant: Canon Kabushiki KaishaInventors: Yukihiro Hayakawa, Genzo Monma, Masato Kamiichi