Patents by Inventor Masato Kanno
Masato Kanno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11985837Abstract: To provide a photoelectric conversion element capable of further improving performance in a photoelectric conversion element using an organic semiconductor material. The photoelectric conversion element includes a first electrode and a second electrode arranged to face each other, and a photoelectric conversion layer 17 provided between the first electrode and the second electrode, in which the photoelectric conversion layer 17 includes a first organic semiconductor material and a second organic semiconductor material, and at least one of the first organic semiconductor material or the second organic semiconductor material is an organic molecule having a HOMO volume fraction of 0.15 or less or a LUMO volume fraction of 0.15 or less.Type: GrantFiled: July 25, 2019Date of Patent: May 14, 2024Assignees: Sony Corporation, Sony Semiconductor Solutions CorporationInventors: Shinnosuke Hattori, Hajime Kobayashi, Sae Miyaji, Masato Kanno, Miki Kimijima, Yuta Hasegawa, Toshio Nishi, Takashi Kawashima, Yosuke Saito, Yuta Inaba
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Patent number: 11856802Abstract: A first photoelectric conversion element according to an embodiment of the present disclosure incudes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode and including a chromophore, fullerene or a fullerene derivative, and a hole-transporting material, in which the chromophore and the fullerene or the fullerene derivative are bonded to each other at least partially via a crosslinking group in the photoelectric conversion layer.Type: GrantFiled: May 13, 2019Date of Patent: December 26, 2023Assignees: Sony Corporation, Sony Semiconductor Solutions CorporationInventors: Yosuke Saito, Sae Miyaji, Masato Kanno, Yasuharu Ujiie, Yuta Hasegawa, Osamu Enoki, Yuki Negishi
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Publication number: 20230207598Abstract: A photoelectric converter includes: a first electrode; a second electrode; a first photoelectric conversion layer; a second photoelectric conversion layer; a first buffer layer; and a second buffer layer. The second electrode is disposed to be opposed to the first electrode. The first photoelectric conversion layer is provided between the first electrode and the second electrode. The first photoelectric conversion layer includes a first dye material and a first carrier transport material. The second photoelectric conversion layer is stacked on the second electrode side of the first photoelectric conversion layer between the first electrode and the second electrode. The second photoelectric conversion layer includes a second dye material and a second carrier transport material. The second dye material has a light absorption waveform different from a light absorption waveform of the first dye material. The first buffer layer has a first electrical conduction type.Type: ApplicationFiled: May 28, 2021Publication date: June 29, 2023Inventors: Osamu ENOKI, Masato KANNO, Chiaki TAKAHASHI, Chika SUGIMURA, Yosuke SAITO
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Publication number: 20230157040Abstract: A photoelectric conversion element of an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode, the organic photoelectric conversion layer having, in the layer, a domain being larger than 1 nm and smaller than 10 nm and including one organic semiconductor material in a predetermined cross-section between the first electrode and the second electrode.Type: ApplicationFiled: June 10, 2021Publication date: May 18, 2023Inventors: Yosuke MURAKAMI, Masato KANNO, Miki KIMIJIMA
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Publication number: 20230134972Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.Type: ApplicationFiled: December 20, 2022Publication date: May 4, 2023Inventors: Yu KATO, Yuta INABA, Masato KANNO, Hideaki MOGI, Miki KIMIJIMA, Sae MIYAJI
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Publication number: 20230101309Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode; an organic layer; a first semiconductor layer; and a second semiconductor layer. The second electrode is disposed to be opposed to the first electrode. The organic layer is provided between the first electrode and the second electrode. The organic layer includes at least a photoelectric conversion layer. The first semiconductor layer is provided between the second electrode and the organic layer. The first semiconductor layer includes at least one of a carbon-containing compound or an inorganic compound. The carbon-containing compound has a greater electron affinity than a work function of the first electrode. The inorganic compound has a greater work function than the work function of the first electrode. The second semiconductor layer is provided between the second electrode and the first semiconductor layer.Type: ApplicationFiled: January 18, 2021Publication date: March 30, 2023Inventors: Masato KANNO, Chiaki TAKAHASHI, Yosuke SAITO
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Publication number: 20230027447Abstract: A first photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is disposed to be opposed to the first electrode; and a photoelectric conversion layer that is provided between the first electrode and the second electrode. The photoelectric conversion layer includes a fullerene C60 or a fullerene C70 as a first organic semiconductor material and a second organic semiconductor material having an ionization potential of 0 or more and 5.0 eV or less.Type: ApplicationFiled: October 15, 2020Publication date: January 26, 2023Inventors: Hajime KOBAYASHI, Shinnosuke HATTORI, Masato KANNO
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Patent number: 11538863Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.Type: GrantFiled: September 7, 2018Date of Patent: December 27, 2022Assignees: Sony Corporation, Sony Semiconductor Solutions CorporationInventors: Yu Kato, Yuta Inaba, Masato Kanno, Hideaki Mogi, Miki Kimijima, Sae Miyaji
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Publication number: 20220223802Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes, as a first organic semiconductor material, a benzothienobenzothiophene-based compound represented by a general formula (1).Type: ApplicationFiled: March 4, 2020Publication date: July 14, 2022Inventors: Masato KANNO, Yosuke SAITO
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Publication number: 20220181568Abstract: The present technology relates to a solid-state imaging element, a method for manufacturing a solid-state imaging element, a photoelectric conversion element, an imaging device, and an electronic apparatus that are capable of realizing highly efficient photoelectric conversion of blue light with organic photoelectric conversion element. A first organic semiconductor having a characteristic of absorbing blue light, a second organic semiconductor having a characteristic of absorbing blue light and a characteristic as a hole-transporting material having crystallinity, and a third organic semiconductor including a fullerene derivative are mixed to form an organic photoelectric conversion layer. The present technology can be applied to a solid-state imaging element.Type: ApplicationFiled: March 13, 2020Publication date: June 9, 2022Inventors: YOSUKE SAITO, MASATO KANNO
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Publication number: 20210280639Abstract: To provide a photoelectric conversion element capable of further improving performance in a photoelectric conversion element using an organic semiconductor material. The photoelectric conversion element includes a first electrode and a second electrode arranged to face each other, and a photoelectric conversion layer 17 provided between the first electrode and the second electrode, in which the photoelectric conversion layer 17 includes a first organic semiconductor material and a second organic semiconductor material, and at least one of the first organic semiconductor material or the second organic semiconductor material is an organic molecule having a HOMO volume fraction of 0.15 or less or a LUMO volume fraction of 0.15 or less.Type: ApplicationFiled: July 25, 2019Publication date: September 9, 2021Applicants: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shinnosuke HATTORI, Hajime KOBAYASHI, Sae MIYAJI, Masato KANNO, Miki KIMIJIMA, Yuta HASEGAWA, Toshio NISHI, Takashi KAWASHIMA, Yosuke SAITO, Yuta INABA
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Publication number: 20210193740Abstract: A first photoelectric conversion element according to an embodiment of the present disclosure incudes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode and including a chromophore, fullerene or a fullerene derivative, and a hole-transporting material, in which the chromophore and the fullerene or the fullerene derivative are bonded to each other at least partially via a crosslinking group in the photoelectric conversion layer.Type: ApplicationFiled: May 13, 2019Publication date: June 24, 2021Applicants: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yosuke SAITO, Sae MIYAJI, Masato KANNO, Yasuharu UJIIE, Yuta HASEGAWA, Osamu ENOKI, Yuki NEGISHI
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Publication number: 20200295088Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.Type: ApplicationFiled: September 7, 2018Publication date: September 17, 2020Inventors: Yu KATO, Yuta INABA, Masato KANNO, Hideaki MOGI, Miki KIMIJIMA, Sae MIYAJI
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Publication number: 20160111357Abstract: A semiconductor device has a chip mounting part, a first semiconductor chip, and a second semiconductor chip. The first semiconductor chip is mounted over the chip mounting part in a direction in which its first principal plane faces the chip mounting part. A part of the second semiconductor chip is mounted over the chip mounting part in a direction in which its third principal plane faces the first semiconductor chip. The element mounting part has a notch part. A part of the second semiconductor chip overlaps the notch part. In a region of the third principal plane of the second semiconductor chip that overlaps the notch part, a second electrode pad is provided.Type: ApplicationFiled: December 29, 2015Publication date: April 21, 2016Applicant: Renesas Electronics CorporationInventors: Shinichi UCHIDA, Kenji NISHIKAWA, Masato KANNO, Mika YONEZAWA, Shunichi KAERIYAMA, Toshinori KIYOHARA
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Patent number: 9257400Abstract: A semiconductor device has a chip mounting part, a first semiconductor chip, and a second semiconductor chip. The first semiconductor chip is mounted over the chip mounting part in a direction in which its first principal plane faces the chip mounting part. A part of the second semiconductor chip is mounted over the chip mounting part in a direction in which its third principal plane faces the first semiconductor chip. The element mounting part has a notch part. A part of the second semiconductor chip overlaps the notch part. In a region of the third principal plane of the second semiconductor chip that overlaps the notch part, a second electrode pad is provided.Type: GrantFiled: September 16, 2014Date of Patent: February 9, 2016Assignee: Renesas Electronics CorporationInventors: Shinichi Uchida, Kenji Nishikawa, Masato Kanno, Mika Yonezawa, Shunichi Kaeriyama, Toshinori Kiyohara
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Publication number: 20150084209Abstract: A semiconductor device has a chip mounting part, a first semiconductor chip, and a second semiconductor chip. The first semiconductor chip is mounted over the chip mounting part in a direction in which its first principal plane faces the chip mounting part. A part of the second semiconductor chip is mounted over the chip mounting part in a direction in which its third principal plane faces the first semiconductor chip. The element mounting part has a notch part. A part of the second semiconductor chip overlaps the notch part. In a region of the third principal plane of the second semiconductor chip that overlaps the notch part, a second electrode pad is provided.Type: ApplicationFiled: September 16, 2014Publication date: March 26, 2015Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Shinichi UCHIDA, Kenji NISHIKAWA, Masato KANNO, Mika YONEZAWA, Shunichi KAERIYAMA, Toshinori KIYOHARA
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Patent number: 8304762Abstract: To provide an organic semiconductor of tetrathiafulvalene derivative and an organic thin-film transistor formed therefrom, the tetrathiafulvalene derivative being readily formed into a stable thin film and the organic thin-film transistor having a high mobility and being driven at a low threshold voltage, an organic semiconductor includes a hexamethylenetetrathiafulvalene compound represented by the formula (1) below, and an organic thin-film transistor having a thin film obtained therefrom (where R1 and R2 each independently denote an alkyl group which may have a C1-10 branched structure).Type: GrantFiled: August 31, 2009Date of Patent: November 6, 2012Assignees: Tokyo Institute of Technology, Nissan Chemical Industries, Ltd.Inventors: Takehiko Mori, Masato Kanno
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Publication number: 20100213444Abstract: To provide an organic semiconductor of tetrathiafulvalene derivative and an organic thin-film transistor formed therefrom, the tetrathiafulvalene derivative being readily formed into a stable thin film and the organic thin-film transistor having a high mobility and being driven at a low threshold voltage, an organic semiconductor includes a hexamethylenetetrathiafulvalene compound represented by the formula (1) below, and an organic thin-film transistor having a thin film obtained therefrom (where R1 and R2 each independently denote an alkyl group which may have a C1-10 branched structure).Type: ApplicationFiled: August 31, 2009Publication date: August 26, 2010Inventors: Takehiko MORI, Masato Kanno
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Patent number: 7015908Abstract: There are provided an image generation system and information storage medium which can generate an image of a simple object with reduced processing load, the brightness of the simple object being variable according to the amount of light sent from a light source and received by the simple object. The image generation system comprises a light-source simple processing section (114) for performing a light-source simple processing relative to the simple object. The light-source simple processing section (114) performs computation for information relating to at least one of the brightness and color on primitive surfaces constructing the simple object, based on an angle difference between a line-of-sight vector of a virtual camera and a light vector from the light source.Type: GrantFiled: November 29, 2000Date of Patent: March 21, 2006Assignee: Namco Ltd.Inventors: Jun Nakagawa, Kazuya Takahashi, Hideki Nakamura, Masato Kanno
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Publication number: 20020135603Abstract: There are provided an image generation system and information storage medium which can generate an image of a simple object with reduced processing load, the brightness of the simple object being variable according to the amount of light sent from a light source and received by the simple object The image generation system comprises a light-source simple processing section (114) for performing a light-source simple processing relative to the simple object.Type: ApplicationFiled: September 20, 2001Publication date: September 26, 2002Inventors: Jun Nakagawa, Kazuya Takahashi, Hideki Nakamura, Masato Kanno