Abstract: A vertical layer stack including a bit-line-level dielectric layer and an etch stop dielectric layer can be formed over an array region. Bit-line trenches are formed through the vertical layer stack. Bit-line-trench fill structures are formed in the bit-line trenches. Each of the bit-line-trench fill structures includes a stack of a bit line and a capping dielectric strip. At least one via-level dielectric layer can be formed over the vertical layer stack. A bit-line-contact via cavity can be formed through the at least one via-level dielectric layer and one of the capping dielectric strips. A bit-line-contact via structure formed in the bit-line-contact via cavity includes a stepped bottom surface including a top surface of one of the bit lines, a sidewall segment of the etch stop dielectric layer, and a segment of a top surface of the etch stop dielectric layer.

Abstract: A multiplexing optical system includes a light source, a lens and a lens array. The light source includes a plurality of light emitting elements of surface emitting lasers. The lens is configured to change and condense optical paths of laser light beams emitted from the light emitting elements. The lens array includes a plurality of lens regions arrayed so as to correspond to respective optical paths of the laser light beams changed by the lens, and is configured to condense the laser light beams by the lens regions to form a multiplexed beam.

Abstract: A laser machining apparatus includes an output ratio control unit that changes an output ratio between a first laser beam and a second laser beam having different propagation characteristics; a superimposing optical system that multiplexes the first laser beam and the second laser beam; an optical fiber in which beam propagation characteristics of a combined laser beam at an exit varies depending on the output ratio, the combined laser beam being a laser beam obtained by combination of the first laser beam and the second laser beam; and a condensing optical system that performs machining of a workpiece by concentrating, on the workpiece, the beam emitted from the optical fiber.

Abstract: A semiconductor laser device includes semiconductor laser elements emitting laser beams having different wavelengths from each other and a partial reflection element. The semiconductor laser elements and the partial reflection element constitute respective ends of an external resonator. Further, there is a transmissive wavelength dispersion element located on optical paths of the laser beams between the semiconductor laser elements and the partial reflection element and at a position where the laser beams are superimposed. The transmissive wavelength dispersion element has a wavelength dispersion property, and changes traveling directions of the laser beams in a first plane including the optical axes of the laser beams to combine the laser beams to have one optical axis. Also, there is an asymmetric refraction optical element located on an optical path between the transmissive wavelength dispersion element and the partial reflection element.

Abstract: A multiplexing optical system includes a light source, a lens and a lens array. The light source includes a plurality of light emitting elements of surface emitting lasers. The lens is configured to change and condense optical paths of laser light beams emitted from the light emitting elements. The lens array includes a plurality of lens regions arrayed so as to correspond to respective optical paths of the laser light beams changed by the lens, and is configured to condense the laser light beams by the lens regions to form a multiplexed beam.

Abstract: A laser module includes: a photonic crystal surface-emitting laser element; a collimating lens array for producing a parallel optical beam; a condenser lens for condensing the optical beam; and an optical fiber which receives the optical beam on one end and transmits the optical beam to the outside. In the collimating lens array, an aperture portion corresponding to a collimating lens allows passage of the optical beam with an energy of not less than 94.0% and not more than 99.5% with respect to 100% of the energy of the optical beam incident on the collimating lens array.

Abstract: A laser module includes: a photonic crystal surface-emitting laser element; a collimating lens array for producing a parallel optical beam; a condenser lens for condensing the optical beam; and an optical fiber which receives the optical beam on one end and transmits the optical beam to the outside. In the collimating lens array, an aperture portion corresponding to a collimating lens allows passage of the optical beam with an energy of not less than 94.0% and not more than 99.5% with respect to 100% of the energy of the optical beam incident on the collimating lens array.

Abstract: A generation device according to the present application includes a storage unit and a generation unit. The storage unit stores information regarding an authentication module that carries out the authentication based on a result of the verification between registration data registered in advance and predetermined input data. The generation unit controls the generation of authentication result information which is information generated from the verification result acquired from the authentication module while serving as information to be processed through a specific authentication procedure used between the generation unit and an authentication server that carries out the personal authentication of a user using the authentication module.

Abstract: A semiconductor laser device includes: a semiconductor laser bar to output a plurality of beams with different wavelengths from a continuous light-emitting region; a light-condensing optical system to condense the beams; a wavelength-dispersive optical element having a wavelength dispersing function; an optical filter in which a wavelength of a beam that passes therethrough differs periodically; an aperture located on an optical path of the beams superimposed on an identical axis; and a partially reflecting mirror. A totally reflecting mirror is formed on a back side of the semiconductor laser bar, and wavelengths of a plurality of beams with different wavelengths reflected by the totally reflecting mirror and output from the semiconductor laser bar are respectively identical to wavelengths of beams that pass through the optical filter.

Abstract: A semiconductor laser device, in which, between a wavelength dispersive element and a partially reflecting mirror, such an anamorphic prism pair is arranged that is configured to increase an angle formed by a regular oscillation optical axis of a regular oscillation beam emitted from each of light emitting points and a cross-coupling optical axis of a cross-coupling oscillation beam oscillating through a different one of the light emitting points. It is therefore possible to increase oscillation loss of the cross-coupling oscillation beam, thereby improving focusing properties, without increasing the device in size.

Abstract: A generation device according to the present application includes a storage unit and a generation unit. The storage unit stores information regarding an authentication module that carries out the authentication based on a result of the verification between registration data registered in advance and predetermined input data. The generation unit controls the generation of authentication result information which is information generated from the verification result acquired from the authentication module while serving as information to be processed through a specific authentication procedure used between the generation unit and an authentication server that carries out the personal authentication of a user using the authentication module.

Abstract: A beam combining device causing beams from a plurality of light sources and one or a plurality of spare light sources to enter a beam combining optical system, and to be combined and output after passing through a beam combining element. The beam combining device is configured to: detect a failure in the plurality of light sources; and move at least a part of the respective light sources, the spare light source, and the beam combining optical system, to cause a beam to enter the beam combining optical system from the spare light source instead of a beam from the failed light source, and to cause the beam to be combined to beams from the plurality of light sources on an optical path after the beam combining element.

Abstract: To provide an electroconductive laminate excellent in electrical conductivity and visible light transparency, an electromagnetic wave shielding film for a plasma display, and a protective plate for a plasma display having excellent electromagnetic wave shielding properties, a broad transmission/reflection band and a high visible light transmittance. An electroconductive laminate 10 comprising a substrate 11, and an electroconductive film 12 having a three-layer structure having a first oxide layer 12a, a metal layer 12b and a second oxide layer 12c laminated sequentially from the substrate 11 side, or having a 3×n layer structure (wherein n is an integer of at least 2) having the above three-layer structure repeated, wherein the first oxide layer 12a contains “zinc oxide” and “titanium oxide or niobium oxide”, the metal layer 12b is a layer containing silver, and the second oxide layer 12c contains a mixture of zinc oxide and aluminum oxide, or the like.

Abstract: To provide a high reflection mirror which exhibits a high reflectance in a visible light region and which has moisture resistance, in particular, being capable of retaining the high reflectance and high resistance to hydrogen sulfide even after being exposed to high temperature and high humidity conditions. A high reflection mirror comprising a substrate and a silver film formed thereon, characterized in that a protective film is formed on the topmost surface of the high reflection mirror, and the protective film has an extinction coefficient of at most 0.1, and the protective film is a carbon film. It is preferred that an underlayer is formed on the substrate side of the silver film, and it is preferred that the underlayer is a titanium oxide film, and the titanium oxide film is formed from an oxygen-deficient target.

Abstract: An electroconductive laminate comprising a substrate and an electroconductive film formed on the substrate, wherein the electroconductive film has a multilayer structure having a high refractive index layer containing an inorganic compound and a metal layer alternately laminated from the substrate side in a total layer number of (2n+1) (wherein n is an integer of from 1 to 12); the refractive index of the inorganic compound is from 1.5 to 2.7; the metal layer is a layer containing silver; the total thickness of all metal layer(s) is from 25 to 100 nm; and the resistivity of the electroconductive film is from 2.5 to 6.0 ??cm.

Abstract: To provide an electromagnetic wave shielding film for a PDP having a low luminous reflectance even without providing a protective film, and a protective plate for a PDP having a low luminous reflectance using the electromagnetic wave shielding film for a PDP. An electromagnetic wave shielding film 10, which comprises a substrate 11 and an electroconductive film 12, wherein the electroconductive film 12 has a multilayer structure in which (n+1) (wherein n is an integer of from 3 to 5) inorganic layers 12a having a refractive index of from 1.55 to 2.5 and n metal layers 12b are alternately laminated from the substrate 11 side; each inorganic layer 12a is a layer containing at least one member selected from a metal oxide, a metal nitride and a metal oxynitride; each metal layer 12b is a layer made of pure silver or a silver alloy; and the second to n-th metal layers from the substrate are thicker than the first metal layer from the substrate, is used.

Abstract: To provide a reflection mirror having a high reflectance in the visible region and excellent in moisture resistance and sulfur resistance, and its production process. A reflection mirror 10 comprising a substrate 11, a silicon nitride film 14 and a silver film 13 formed between the substrate 11 and the silicon nitride film 14, wherein when 10 ppm of hydrogen sulfide is introduced, and the reflection mirror is left to stand for 100 hours in an atmosphere at a temperature of 50° C. under a relative humidity of 80%, the rate of change of the luminous reflectance (chromaticity Y of the tristimulus value as defined in JIS Z8701 (1982)) after being left to stand is within 10% based on the luminous reflectance before being left to stand. Further, a process for producing a reflection mirror 10, which comprises forming a silver film 13 by a sputtering method and then forming a silicon nitride film 14 by a chemical vapor deposition method.

Abstract: To provide an electromagnetic wave shielding laminate having a high visible light transmittance and having a low resistance and a high moisture resistance available at a low cost, and a display device using it. An electromagnetic wave shielding laminate 1 comprising a transparent substrate 2 and an electromagnetic wave shielding film 100 formed on the substrate, wherein the electromagnetic wave shielding film 100 has, sequentially from the substrate 2 side, a first high refractive index layer 31 made of a metal oxide having a refractive index of at least 2.0, a first oxide layer 32 containing zinc oxide and titanium oxide as the main components, an electroconductive layer 33 containing silver as the main component and a second high refractive index layer 35 made of a metal oxide having a refractive index of at least 2.0.