Patents by Inventor Masato KOAKUTSU
Masato KOAKUTSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11702739Abstract: A film deposition method uses a film deposition apparatus including a source gas supply part and a cleaning gas supply part. In the method, a source gas is adsorbed on a substrate by supplying the source gas from the source gas supply part without supplying a purge gas into the cleaning gas supply part. A reaction product is deposited on the substrate by supplying a reaction gas reactable with the source gas to the substrate on which the source gas is adsorbed without supplying the purge gas into the cleaning gas supply part.Type: GrantFiled: February 26, 2019Date of Patent: July 18, 2023Assignee: Tokyo Electron LimitedInventors: Hiroki Miura, Masato Koakutsu
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Patent number: 11075076Abstract: A method for manufacturing a semiconductor device is provided. In the method, impurities contained in a first layer formed on a substrate are removed by heating the first layer. On the first layer, a second layer is formed containing a component that forms a substance that is able to vaporize by reacting with the impurities.Type: GrantFiled: November 20, 2018Date of Patent: July 27, 2021Assignee: Tokyo Electron LimitedInventors: Takahito Umehara, Masato Koakutsu
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Publication number: 20210180182Abstract: There is provision of a method of cleaning an exhaust pipe of a film forming apparatus for removing a component adhering to the exhaust pipe which is generated from a source gas for forming film supplied from a gas supply part to a processing chamber of the film forming apparatus. The method includes a step of supplying a cleaning gas from the gas supply part to the exhaust pipe via the processing chamber while the film forming apparatus is operating but a film forming process is not performed in the processing chamber, in order to remove the component by causing the component to vaporize upon reacting with the cleaning gas. The cleaning gas to be supplied is capable of causing the component adhering to the exhaust pipe to change into an evaporable substance by chemical reaction in an atmosphere inside the exhaust pipe.Type: ApplicationFiled: March 2, 2021Publication date: June 17, 2021Inventors: Takahito UMEHARA, Masato KOAKUTSU, Tsubasa WATANABE
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Patent number: 10975466Abstract: There is provision of a method of cleaning an exhaust pipe of a film forming apparatus for removing a component adhering to the exhaust pipe which is generated from a source gas for forming film supplied from a gas supply part to a processing chamber of the film forming apparatus. The method includes a step of supplying a cleaning gas directly, from a cleaning gas supply part disposed near a joint between the processing chamber and the exhaust pipe, to the exhaust pipe without passing through the processing chamber, in order to remove the component by causing the component to vaporize upon reacting with the cleaning gas. The cleaning gas to be supplied is capable of causing the component adhering to the exhaust pipe to change into an evaporable substance by chemical reaction in an atmosphere inside the exhaust pipe.Type: GrantFiled: September 4, 2018Date of Patent: April 13, 2021Assignee: Tokyo Electron LimitedInventors: Takahito Umehara, Masato Koakutsu, Tsubasa Watanabe
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Patent number: 10961623Abstract: A film forming method forms a film including a predetermined element on substrates placed on a turntable, by supplying a first reaction gas including the predetermined element from a first supply part and supplying a second reaction gas from a second supply part in a raised state of the turntable, and rotating the turntable a predetermined number of times in a state in which the separation gas is supplied from a separation gas supply part, and performs an anneal process at least before or after the film forming process, by supplying the separation gas or the second reaction gas from the first supply part and supplying the separation gas or the second reaction gas from the second supply part in a lowered state of the turntable, and rotating the turntable at least once in a state in which the separation gas is supplied from the separation gas supply part.Type: GrantFiled: December 11, 2018Date of Patent: March 30, 2021Assignee: Tokyo Electron LimitedInventor: Masato Koakutsu
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Publication number: 20190271077Abstract: A film deposition method uses a film deposition apparatus including a source gas supply part and a cleaning gas supply part. In the method, a source gas is adsorbed on a substrate by supplying the source gas from the source gas supply part without supplying a purge gas into the cleaning gas supply part. A reaction product is deposited on the substrate by supplying a reaction gas reactable with the source gas to the substrate on which the source gas is adsorbed without supplying the purge gas into the cleaning gas supply part.Type: ApplicationFiled: February 26, 2019Publication date: September 5, 2019Inventors: Hiroki MIURA, Masato KOAKUTSU
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Publication number: 20190194807Abstract: A film forming method forms a film including a predetermined element on substrates placed on a turntable, by supplying a first reaction gas including the predetermined element from a first supply part and supplying a second reaction gas from a second supply part in a raised state of the turntable, and rotating the turntable a predetermined number of times in a state in which the separation gas is supplied from a separation gas supply part, and performs an anneal process at least before or after the film forming process, by supplying the separation gas or the second reaction gas from the first supply part and supplying the separation gas or the second reaction gas from the second supply part in a lowered state of the turntable, and rotating the turntable at least once in a state in which the separation gas is supplied from the separation gas supply part.Type: ApplicationFiled: December 11, 2018Publication date: June 27, 2019Inventor: Masato KOAKUTSU
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Publication number: 20190172707Abstract: A method for manufacturing a semiconductor device is provided. In the method, impurities contained in a first layer formed on a substrate are removed by heating the first layer. On the first layer, a second layer is formed containing a component that forms a substance that is able to vaporize by reacting with the impurities.Type: ApplicationFiled: November 20, 2018Publication date: June 6, 2019Inventors: Takahito UMEHARA, Masato KOAKUTSU
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Publication number: 20190078198Abstract: There is provision of a method of cleaning an exhaust pipe of a film forming apparatus for removing a component adhering to the exhaust pipe which is generated from a source gas for forming film supplied from a gas supply part to a processing chamber of the film forming apparatus. The method includes a step of supplying a cleaning gas directly, from a cleaning gas supply part disposed near a joint between the processing chamber and the exhaust pipe, to the exhaust pipe without passing through the processing chamber, in order to remove the component by causing the component to vaporize upon reacting with the cleaning gas. The cleaning gas to be supplied is capable of causing the component adhering to the exhaust pipe to change into an evaporable substance by chemical reaction in an atmosphere inside the exhaust pipe.Type: ApplicationFiled: September 4, 2018Publication date: March 14, 2019Inventors: Takahito UMEHARA, Masato KOAKUTSU, Tsubasa WATANABE
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Patent number: 9748104Abstract: A method of depositing a film is provided. In the method, one operation of a unit of film deposition process is performed by carrying a substrate into a processing chamber, by depositing a nitride film on the substrate, and by carrying the substrate out of the processing chamber after finishing depositing the nitride film on the substrate. The one operation is repeated a predetermined plurality of number of times continuously to deposit the nitride film on a plurality of substrates continuously. After that, an inside of the processing chamber is oxidized by supplying an oxidation gas into the processing chamber.Type: GrantFiled: July 22, 2014Date of Patent: August 29, 2017Assignee: Tokyo Electron LimitedInventors: Hiroko Sasaki, Yu Wamura, Masato Koakutsu
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Patent number: 9136133Abstract: A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second process gas to the substrate once each cycle. A cycle time of the cycle is set equal to or shorter than 0.5 seconds.Type: GrantFiled: June 19, 2014Date of Patent: September 15, 2015Assignee: Tokyo Electron LimitedInventors: Kentaro Oshimo, Masato Koakutsu, Hiroko Sasaki, Hiroaki Ikegawa
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Patent number: 8992079Abstract: A temperature measurement apparatus for estimating a temperature profile in a process container, includes a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas at a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; an operation control unit that controls to start heating of the process container by a heater while keeping the rotating table immobilized, and controls to repeat a scanning operation, in which the radiation temperature measurement unit scans the surface of the rotating table in the radius direction to obtain the temperature of the plural temperature measurement areas while the rotating table is rotated in a circumferential direction of the rotating table, after a predetermined period has passed from starting the heating of the process container.Type: GrantFiled: May 23, 2012Date of Patent: March 31, 2015Assignee: Tokyo Electron LimitedInventors: Masayuki Moroi, Hitoshi Kikuchi, Masato Koakutsu
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Patent number: 8987147Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.Type: GrantFiled: December 17, 2013Date of Patent: March 24, 2015Assignee: Tokyo Electron LimitedInventors: Hiroaki Ikegawa, Masahiko Kaminishi, Kosuke Takahashi, Masato Koakutsu, Jun Ogawa
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Publication number: 20150031204Abstract: A method of depositing a film is provided. In the method, one operation of a unit of film deposition process is performed by carrying a substrate into a processing chamber, by depositing a nitride film on the substrate, and by carrying the substrate out of the processing chamber after finishing depositing the nitride film on the substrate. The one operation is repeated a predetermined plurality of number of times continuously to deposit the nitride film on a plurality of substrates continuously. After that, an inside of the processing chamber is oxidized by supplying an oxidation gas into the processing chamber.Type: ApplicationFiled: July 22, 2014Publication date: January 29, 2015Inventors: Hiroko SASAKI, Yu WAMURA, Masato KOAKUTSU
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Publication number: 20150011087Abstract: A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second process gas to the substrate once each cycle. A cycle time of the cycle is set equal to or shorter than 0.5 seconds.Type: ApplicationFiled: June 19, 2014Publication date: January 8, 2015Inventors: Kentaro OSHIMO, Masato KOAKUTSU, Hiroko SASAKI, Hiroaki IKEGAWA
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Patent number: 8921237Abstract: A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.Type: GrantFiled: December 19, 2013Date of Patent: December 30, 2014Assignee: Tokyo Electron LimitedInventors: Kentaro Oshimo, Masato Koakutsu, Hiroko Sasaki, Hiroaki Ikegawa
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Publication number: 20140209028Abstract: A film deposition apparatus includes a turntable; a first process gas supply portion; a gas nozzle that supplies a second process gas; a nozzle cover that is provided to cover the gas nozzle; a separation gas supply portion, wherein the nozzle cover includes an upper plate portion, and an upstream sidewall portion and a downstream sidewall portion that extend downward from upstream and downstream edge portions of the upper plate portion in a rotational direction of the turntable, respectively, wherein an inner surface of the upstream sidewall portion is formed as an inclined surface that is inclined with respect to a surface of the turntable, and wherein an angle ?1 between the inner surface of the upstream sidewall portion and the surface of the turntable is smaller than an angle ?2 between an inner surface of the downstream sidewall portion and the surface of the turntable.Type: ApplicationFiled: January 24, 2014Publication date: July 31, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Kentaro OSHIMO, Masato KOAKUTSU, Hiroko SASAKI, Kaoru SATO, Hiroaki IKEGAWA
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Publication number: 20140179104Abstract: A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.Type: ApplicationFiled: December 19, 2013Publication date: June 26, 2014Applicant: Tokyo Electron LimitedInventors: Kentaro Oshimo, Masato Koakutsu, Hiroko Sasaki, Hiroaki Ikegawa
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Publication number: 20140179121Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.Type: ApplicationFiled: December 17, 2013Publication date: June 26, 2014Applicant: Tokyo Electron LimitedInventors: Hiroaki IKEGAWA, Masahiko KAMINISHI, Kosuke TAKAHASHI, Masato KOAKUTSU, Jun OGAWA
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Publication number: 20130130187Abstract: A temperature measurement apparatus for estimating a temperature profile in a process container, includes a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas at a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; an operation control unit that controls to start heating of the process container by a heater while keeping the rotating table immobilized, and controls to repeat a scanning operation, in which the radiation temperature measurement unit scans the surface of the rotating table in the radius direction to obtain the temperature of the plural temperature measurement areas while the rotating table is rotated in a circumferential direction of the rotating table, after a predetermined period has passed from starting the heating of the process container.Type: ApplicationFiled: May 23, 2012Publication date: May 23, 2013Applicant: Tokyo Electron LimitedInventors: Masayuki MOROI, Hitoshi KIKUCHI, Masato KOAKUTSU