Abstract: A copper wire rod with an excellent surface quality and a magnet wire, in which the occurrence of blister defects is suppressed, are provided. The copper wire rod has a composition consisting of: more than 10 ppm by mass and 30 ppm by mass or less of P; 10 ppm by mass or less of O; 1 ppm by mass or less of H; and the balance Cu and inevitable impurities, wherein hydrogen concentration after performing a heat treatment at 500° for 30 minutes in vacuum is 0.2 ppm by mass or less. The magnet wire includes: a drawn wire material produced by using the copper wire rod; and an insulating film coating an outer periphery of the drawn wire material.

Abstract: Disclosed is a hot rolled plate produced by hot rolling an ingot cast by continuous casting, in which the plate is made of a copper alloy containing 0.5 to 10.0 at % of Ca and the balance consisting of Cu and inevitable impurities and the average grain size of Cu-? phase crystal grains is 5 to 60 ?m in a Cu matrix.

Abstract: Disclosed is a hot rolled plate produced by hot rolling an ingot cast by continuous casting, in which the plate is made of a copper alloy containing 0.5 to 10.0 at % of Ca and the balance consisting of Cu and inevitable impurities and the average grain size of Cu-? phase crystal grains is 5 to 60 ?m in a Cu matrix.

Abstract: A copper wire rod with an excellent surface quality and a magnet wire, in which the occurrence of blister defects is suppressed, are provided. The copper wire rod has a composition consisting of: more than 10 ppm by mass and 30 ppm by mass or less of P; 10 ppm by mass or less of O; 1 ppm by mass or less of H; and the balance Cu and inevitable impurities, wherein hydrogen concentration after performing a heat treatment at 500° for 30 minutes in vacuum is 0.2 ppm by mass or less. The magnet wire includes: a drawn wire material produced by using the copper wire rod; and an insulating film coating an outer periphery of the drawn wire material.

Abstract: A Mn-containing copper alloy sputtering target is provided. The target generates a small number of particles and is used to form diffusion inhibiting films and seed films of interconnects of semiconductor devices simultaneously. The target is a Mn-containing copper alloy sputtering target that generates few particles, comprising a copper alloy containing 0.6 to 30 mass % of Mn with the balance consisting of copper and impurities, wherein the impurities are controlled to include a total of 40 ppm or less of metallic impurities, 10 ppm or less of oxygen, 5 ppm or less of nitrogen, 5 ppm or less of hydrogen, and 10 ppm or less of carbon.

Abstract: This worked high-purity copper material includes Cu having a purity of 99.9999% by mass or more, wherein an average crystal grain size is in a range of 20 ?m or less, and in a grain size distribution of crystal grains, an area ratio of crystal grains having grain sizes that exceed 2.5 times the average crystal grain size is in a range of less than 10% of an area of the entire crystal grains. This method for producing a worked high-purity copper material includes: subjecting an ingot composed of high-purity copper having a Cu purity of 99.9999% by mass or more to hot forging at an initial temperature of 550° C. or higher, and then water-cooling the ingot; subsequently, subjecting the ingot to warm forging at an initial temperature of 350° C. or higher, and then water-cooling the ingot; subsequently, subjecting the ingot to cold cross-rolling at a total reduction ratio of 50% or more; and subsequently, subjecting the ingot to stress relief annealing at a temperature of 200° C. or higher.

Abstract: This sputtering target for forming a thin film transistor wiring film has a composition including 0.1 at % to 5 at % of Mg, 0.1 at % to 10 at % of Ca, and the remainder being Cu and inevitable impurities. Either one or both of Mn and Al may further be included at a total amount in a range of 0.1 at % to 10 at %. 0.001 at % to 0.1 at % of P may further be included.

Abstract: A Mn-containing copper alloy sputtering target is provided. The target generates a small number of particles and is used to form diffusion inhibiting films and seed films of interconnects of semiconductor devices simultaneously. The target is a Mn-containing copper alloy sputtering target that generates few particles, comprising a copper alloy containing 0.6 to 30 mass % of Mn with the balance consisting of copper and impurities, wherein the impurities are controlled to include a total of 40 ppm or less of metallic impurities, 10 ppm or less of oxygen, 5 ppm or less of nitrogen, 5 ppm or less of hydrogen, and 10 ppm or less of carbon.

Abstract: A method for producing copper alloy materials for molds for continuous steel casting and molds as produced by the method. The molds are highly resistant to thermal fatigue and are hardly cracked. To produce the materials, cast ingots of a copper-based chromium-zirconium alloy comprising from 0.2 to 1.5% by weight of Cr and from 0.02 to 0.2% by weight of Zr are heated at between 900.degree. C. and 1000.degree. C. for 30 minutes or longer and then rolled, while hot, at a reduction ratio of 60% or more to be at 850.degree. C. or higher at which the hot rolling is finished , and immediately after the hot rolling, these are rapidly cooled to 400.degree. C. or lower at a cooling rate of 10.degree.C./sec or more, and then aged at between 400.degree. C. and 520.degree. C. for from 1 hour to 5 hours.

Abstract: In a method of manufacturing an extra fine wire, a blank wire cooled to a low temperature is caused to pass through a high humidity atmosphere and, immediately thereafter, is drawn to a diameter such that wire breakage due to the drawing does not occur. Alternatively, a blank wire is caused to pass through a die assembly so arranged as to be immersed in refrigerant, and is drawn within the refrigerant of low temperature, to a diameter with which wire breakage due to the drawing does not occur. The drawn wire material is heated rapidly and is annealed and, thereafter, is cooled rapidly to form an intermediate blank wire. Subsequently, the intermediate wire is drawn at the ordinary temperature.