Abstract: A transfer apparatus includes a transfer chamber to which a target object of a processing chamber is transferred, and an ionic liquid, held on an inner wall of the transfer chamber. The ionic liquid adsorbs particles in an atmosphere in the transfer chamber.

Abstract: A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

Abstract: A method for forming a film on a flexible substrate by vapor deposition is provided, wherein the method is capable of reducing in size of the entire apparatus and improving an efficiency to thereby enhance productivity. A film formation method includes the steps of: transporting the flexible substrate through a first zone in a vacuum chamber, into which a raw material gas containing metal or silicon is introduced, so that components included in the raw material gas are adsorbed onto the flexible substrate, and performing sputter deposition by transporting the flexible substrate through a second zone in the vacuum chamber, the second zone being separated from the first zone and including a target material containing metal or silicon.

Abstract: A film formation apparatus and a film formation method that can homogenize the distribution of gas in each zone in a chamber and improve film formation precision are provided. A film formation apparatus according to one embodiment includes: a chamber which includes a plurality of zones into which gas is introduced, and a plurality of discharge ports that discharge the gas located in at least any of the zones and that can individually adjust an opening state; and a transportation unit that transports a substrate so as to pass through the plurality of the zones in the chamber.

Abstract: A laminate body includes a base material, a film-like or a membrane-like undercoat layer that is formed in at least a portion of the outer surface of the base material, and an atomic layer deposition film that is formed on a surface opposite to a surface coming into contact with the base material among both surfaces of the undercoat layer in the thickness direction thereof. At least a portion of precursors of the atomic layer deposition film bind to the undercoat layer, and the atomic layer deposition film is formed into a membrane shape covering the undercoat layer.

Abstract: A 3D printer includes: an object-forming unit for forming an object by laminating an object material at an object-forming point based on a design data; an image capturing unit for capturing an image of the object formed by the object-forming unit; and a shape measurement unit for measuring a cross section of the object based on the image captured by the image capturing unit while the object is under formation by the object-forming unit.

Abstract: An XY shift mechanism can shift a rotary table in a two-dimensional direction (XY direction) orthogonal to a rotation axis of the rotary table. By collaborative control of the shift position of the rotary table in the two-dimensional direction in synchronization with the rotation of the rotary table, rotation is made possible about a virtual rotation center that is set at an arbitrary position on the rotary table. The collaborative control of the shift position of the rotary table in the two-dimensional direction also corrects rotation eccentricity owing to the eccentricity of the rotary table. Thus, the virtual rotation center can be set at an arbitrary position on the rotary table, thus enabling obtainment of high resolution tomographic images of a plurality of regions of interest of an object, without the need for repositioning of the object.

Abstract: A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (11), a multilayer reflective film (12), a protective film (13), an absorption film (14), and a reverse-surface conductive film (15). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO2, TiO2, and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.

Abstract: A system for forming a thin film on a substrate uses a plasma to activate at least one gaseous precursor in a plasma generator fluidly coupled with a reaction space. The plasma generator is operative to generate a plasma from at least a portion of the precursor gas with at least one pair of plasma electrodes, one plasma electrode having a non-native electrically conductive adlayer exhibiting property characteristics that cause the adlayer to be substantially conserved and chemically active with at least one of the gases present within the plasma generation region.

Abstract: A system for forming a thin film on a substrate uses a plasma to activate at least one gaseous precursor in a plasma generator fluidly coupled with a reaction space. The plasma generator is operative to generate a plasma from at least a portion of the precursor gas with at least one pair of plasma electrodes, one plasma electrode having a non-native electrically conductive adlayer exhibiting property characteristics that cause the adlayer to be substantially conserved and chemically active with at least one of the gases present within the plasma generation region.

Abstract: A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (11), a multilayer reflective film (12), a protective film (13), an absorption film (14), and a reverse-surface conductive film (15). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO2, TiO2, and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.

Abstract: A laminate body includes a base material, a film-like or a membrane-like undercoat layer that is formed in at least a portion of the outer surface of the base material, and an atomic layer deposition film that is formed on a surface opposite to a surface coming into contact with the base material among both surfaces of the undercoat layer in the thickness direction thereof. At least a portion of precursors of the atomic layer deposition film bind to the undercoat layer, and the atomic layer deposition film is formed into a membrane shape covering the undercoat layer.

Abstract: One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode.

Abstract: One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode.

Abstract: A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.

Abstract: One embodiment of the present invention is a thin film transistor including a gate electrode formed on an insulating substrate, a gate insulator formed on the gate electrode, a drain electrode and a source electrode formed on the gate insulator, an oxide semiconductor pattern formed between the drain electrode and the source electrode, and a sealing layer formed on the oxide semiconductor pattern.

Abstract: One embodiment of the present invention is a thin film transistor including a gate electrode formed on an insulating substrate, a gate insulator formed on the gate electrode, a drain electrode and a source electrode formed on the gate insulator, an oxide semiconductor pattern formed between the drain electrode and the source electrode, and a sealing layer formed on the oxide semiconductor pattern.

Abstract: A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.

Abstract: A crystalline ITO transparent conductive thin film is formed by heating a substrate at low temperature during the sputtering film formation. The crystalline ITO transparent conductive thin film is formed by using an ITO target comprising In2O3 and SnO2 where a weight percentage of SnO2 is 6% or less based on the total weight of In2O3 and SnO2 in the ITO target, and heating the substrate at 90 to 170° C. during the sputtering film formation. The crystalline ITO film with high strength and mechanical durability can be formed by heating at low temperature, which meets heat resistance of the substrate, without requiring annealing after the film formation. There are provided a transparent conductive film comprising a polymer film 4 and an ITO transparent conductive film 5 formed thereon, and a touch panel comprising the transparent conductive film.