Abstract: A semiconductor module comprises a semiconductor element, a joining part configured including a sintered metal, a substrate member, and a lead frame. The joining part comprises: at least one element joining member that joins the semiconductor element and a main surface of the substrate member; and at least one lead frame joining member that joins the lead frame and the main surface of the substrate part, the at least one lead frame joining member having a small-piece form with the same volume as the element joining member.

Abstract: A cooling unit includes a unit main body including a bottom portion, a peripheral wall portion rising from the peripheral edge of the bottom portion, and a seal for sealing an opening of the unit main body. The unit main body is joined to the seal through a plasticized region, and a void is defined in the peripheral wall portion of the unit main body.

Abstract: A cooling unit includes a unit main body including a bottom portion, a peripheral wall portion rising from the peripheral edge of the bottom portion, and a sealing body for sealing an opening of the unit main body. The unit main body is joined to the sealing body through a plasticized region, and a void is formed at a position close to the unit main body with respect to a center of the plasticized region.

Abstract: A soft magnetic powder that can exhibit desirable soft magnetic characteristics. A dust core using the soft magnetic powder is also provided. The soft magnetic powder includes: a soft magnetic powder layer of an unoxidized soft magnetic material; a second oxide layer as an oxide with iron or boron residing around the soft magnetic powder layer; and a first oxide layer of an iron oxide residing around the second oxide layer. The first oxide layer and the second oxide layer reside in a region of 20 nm or more and 500 nm or less from a surface of the soft magnetic powder, and are absent in a region of more than 500 nm and 1,600 nm or less from the surface.

Abstract: Provided herein is a soft magnetic alloy powder that can exhibit a high saturation flux density and desirable soft magnetic characteristics. A dust core using the soft magnetic alloy powder is also provided. The soft magnetic alloy powder is an Fe-based nanocrystalline soft magnetic alloy powder of a crystallized Fe-based amorphous soft magnetic alloy powder, and has a DSC curve with a first peak that is 15% or less of a first peak of the Fe-based amorphous soft magnetic alloy in terms of a maximum value.

Abstract: Provided herein is a soft magnetic alloy powder that can exhibit a high saturation flux density and desirable soft magnetic characteristics. A dust core using such a soft magnetic alloy powder is also provided. A soft magnetic alloy powder is used that includes an amorphous phase, and an ?Fe crystalline phase residing in the amorphous phase. The ?Fe crystalline phase has a crystallite volume distribution with a mode of 1 nm or more and 15 nm or less, and with a half width of 3 nm or more and 50 nm or less.

Abstract: A soft magnetic alloy powder includes a first pulverized powder which has a particle diameter of 20 ?m or more, a value of major diameter/minor diameter of 1.2 or more and 1.8 or less, and a flat plate shape, and a second pulverized powder which has a particle diameter of less than 3 ?m, a value of major diameter/minor diameter of 1.1 or more and 1.6 or less, and a flat plate shape. A production method of a soft magnetic alloy powder, includes first processing of processing a soft magnetic alloy ribbon into a coarse powder, and second processing of pulverizing the coarse powder with a pulverizer.

Abstract: Provided herein is a soft magnetic alloy powder that can exhibit a high saturation flux density and desirable soft magnetic characteristics. A dust core using such a soft magnetic alloy powder is also provided. A soft magnetic alloy powder is used that includes an amorphous phase, and an ?Fe crystalline phase residing in the amorphous phase. The ?Fe crystalline phase has a crystallite volume distribution with a mode of 1 nm or more and 15 nm or less, and with a half width of 3 nm or more and 50 nm or less.

Abstract: A semiconductor chip including an internal circuit, a plurality of electrode pads and a plurality of I/O cells. The plurality of electrode pads are arranged on a first line, a second line and a third line. Each of the plurality of electrode pads arranged at least on the first and second lines overlaps corresponding one of the plurality of I/O cells in a plan view. The plurality of I/O cells are provided on a peripheral region of the semiconductor chip. Each of the plurality of I/O cells includes a protective circuit, and is connected to corresponding one of the plurality of electrode pads. The protective circuit includes a power source-side protective circuit provided between the corresponding one of the plurality of electrode pads and a power source wiring; and a ground-side protective circuit provided between the corresponding one of the plurality of electrode pads and a ground wiring.

Abstract: A dust core achieving both a high magnetic permeability and a high voltage resistance and a method of manufacturing the same are provided. The dust core is a dust core containing a powder of a soft magnetic composition. The powder of the soft magnetic composition includes at least an ellipsoidal powder having a flatness within a range from 3.0 to 6.0.

Abstract: A semiconductor chip including an internal circuit, a plurality of electrode pads and a plurality of I/O cells. The plurality of electrode pads are arranged on a first line, a second line and a third line. Each of the plurality of electrode pads arranged at least on the first and second lines overlaps corresponding one of the plurality of I/O cells in a plan view. The plurality of I/O cells are provided on a peripheral region of the semiconductor chip. Each of the plurality of I/O cells includes a protective circuit, and is connected to corresponding one of the plurality of electrode pads. The protective circuit includes a power source-side protective circuit provided between the corresponding one of the plurality of electrode pads and a power source wiring; and a ground-side protective circuit provided between the corresponding one of the plurality of electrode pads and a ground wiring.

Abstract: A soft magnetic alloy powder includes a first pulverized powder which has a particle diameter of 20 ?m or more, a value of major diameter/minor diameter of 1.2 or more and 1.8 or less, and a flat plate shape, and a second pulverized powder which has a particle diameter of less than 3 ?m, a value of major diameter/minor diameter of 1.1 or more and 1.6 or less, and a flat plate shape. A production method of a soft magnetic alloy powder, includes first processing of processing a soft magnetic alloy ribbon into a coarse powder, and second processing of pulverizing the coarse powder with a pulverizer.

Abstract: A semiconductor chip including an internal circuit, a plurality of electrode pads and a plurality of I/O cells. The plurality of electrode pads are arranged on a first line, a second line and a third line. Each of the plurality of electrode pads arranged at least on the first and second lines overlaps corresponding one of the plurality of I/O cells in a plan view. The plurality of I/O cells are provided on a peripheral region of the semiconductor chip. Each of the plurality of I/O cells includes a protective circuit, and is connected to corresponding one of the plurality of electrode pads. The protective circuit includes a power source-side protective circuit provided between the corresponding one of the plurality of electrode pads and a power source wiring; and a ground-side protective circuit provided between the corresponding one of the plurality of electrode pads and a ground wiring.

Abstract: A soft magnetic powder that can exhibit desirable soft magnetic characteristics. A dust core using the soft magnetic powder is also provided. The soft magnetic powder includes: a soft magnetic powder layer of an unoxidized soft magnetic material; a second oxide layer as an oxide with iron or boron residing around the soft magnetic powder layer; and a first oxide layer of an iron oxide residing around the second oxide layer. The first oxide layer and the second oxide layer reside in a region of 20 nm or more and 500 nm or less from a surface of the soft magnetic powder, and are absent in a region of more than 500 nm and 1,600 nm or less from the surface.

Abstract: Provided herein is a soft magnetic alloy powder that can exhibit a high saturation flux density and desirable soft magnetic characteristics. A dust core using the soft magnetic alloy powder is also provided. The soft magnetic alloy powder is an Fe-based nanocrystalline soft magnetic alloy powder of a crystallized Fe-based amorphous soft magnetic alloy powder, and has a DSC curve with a first peak that is 15% or less of a first peak of the Fe-based amorphous soft magnetic alloy in terms of a maximum value.

Abstract: Provided herein is a dust core having high mechanical strength and high magnetic permeability. An alloy powder constituting the dust core is also provided. A soft magnetic powder is used that has a plurality of protrusions of 0.1 ?m or more and 5 ?m or less on an alloy powder surface. A dust core is used that contains at least 80 weight % of the soft magnetic alloy powder. A method for producing a soft magnetic powder is used that includes producing an amorphous soft magnetic alloy ribbon by liquid quenching; and pulverizing the amorphous soft magnetic alloy ribbon into a powder having a thickness of 0.1 ?m or more and 40 ?m or less without heat treatment. The pulverization cleaves the amorphous soft magnetic alloy ribbon, and produces a protrusion on a powder surface.

Abstract: A dust core capable of reducing the eddy-current loss of a soft magnetic powder, and having a small loss, particularly in a high-frequency region includes a powder of a soft magnetic composition having a maximum roundness of 0.5 or more, and a mean roundness of 0.2 or more. The powder includes a pulverized powder and a spherical powder. The pulverized powder has a maximum roundness of 0.5 or more, and a mean roundness of 0.2 or more. The spherical powder has a maximum roundness of 0.9 or more, and a mean roundness of 0.5 or more.

Abstract: Provided herein is a soft magnetic alloy powder that can exhibit a high saturation flux density and desirable soft magnetic characteristics. A dust core using such a soft magnetic alloy powder is also provided. A soft magnetic alloy powder is used that includes an amorphous phase, and an ?Fe crystalline phase residing in the amorphous phase. The ?Fe crystalline phase has a crystallite volume distribution with a mode of 1 nm or more and 15 nm or less, and with a half width of 3 nm or more and 50 nm or less.

Abstract: A semiconductor chip including an internal circuit, a plurality of electrode pads and a plurality of I/O cells. The plurality of electrode pads are arranged on a first line, a second line and a third line. Each of the plurality of electrode pads arranged at least on the first and second lines overlaps corresponding one of the plurality of I/O cells in a plan view. The plurality of I/O cells are provided on a peripheral region of the semiconductor chip. Each of the plurality of I/O cells includes a protective circuit, and is connected to corresponding one of the plurality of electrode pads. The protective circuit includes a power source-side protective circuit provided between the corresponding one of the plurality of electrode pads and a power source wiring; and a ground-side protective circuit provided between the corresponding one of the plurality of electrode pads and a ground wiring.

Abstract: In a semiconductor integrated circuit device, a plurality of electrode pads for external connection are arranged in a zigzag pattern. Some electrode pads of the electrode pads of the plurality of I/O cells which are closer to a side of the semiconductor chip, each have an end portion closer to the side of the semiconductor chip, the end portion being set at the same position as that of an end portion of the corresponding I/O cell. A power source-side protective circuit and a ground-side protective circuit against discharge of static electricity are provided with the power source-side protective circuit being closer to the scribe region. A distance between a center position of one of the electrode pads and the ground-side protective circuit of the corresponding I/O cell and a distance between a center position of the other one electrode pad and the ground-side protective circuit of the corresponding I/O cell are both short and are substantially equal between each I/O cell.