Patents by Inventor Masato Morifuji

Masato Morifuji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090225804
    Abstract: A semiconductor laser comprises an active section for generating light, and a peripheral section as resonator for producing laser light from the generated light, and includes an InP substrate. The active section has a lower cladding layer formed of AlInAs or AlGaInAs, a core layer including an active layer formed of AlGaInAs or InGaAsP, and an upper cladding layer formed of AlInAs or AlGaInAs. The peripheral section has a first cladding layer formed by oxidizing AlInAs or AlGaInAs, a core layer, and a second clad layer formed by oxidizing AlInAs or AlGaInAs, and a two-dimensional photonic crystal defined by an array of regularly spaced apart holes the peripheral section.
    Type: Application
    Filed: February 25, 2009
    Publication date: September 10, 2009
    Applicants: MITSUBISHI ELECTRIC CORPORATION, OSAKA UNIVERSITY
    Inventors: Yoshifumi Sasahata, Keisuke Matsumoto, Toshitaka Aoyagi, Masahiko Kondow, Masato Morifuji, Hideki Momose