Abstract: A sealed compressor comprises an electric component; a compression component actuated by the electric component; a sealed container accommodating the electric component and the compression component; a suction pipe provided to suction a refrigerant into the sealed container; and a suction muffler having an inner space communicating with a compression chamber of the compression component and a suction port through which the refrigerant is suctioned into the inner space; a communicating passage for providing communication between the suction port of the suction muffler and the suction pipe, the communicating passage being made of a flexible material; and at least one cut portion provided in an end portion of the communicating passage at the suction pipe side such that the cut portion cuts a portion of the end portion.

Abstract: Disclosed is a film formation apparatus (1a) that forms a thin film upon a substrate (S), wherein partitions (41) separate the space above the substrate (S) into a plasma generation space (401) and an exhaust space (402) and extend downward from the ceiling of the processing container (10) to form an opening between the substrate (S) and the bottom end of the partitions, in which gas flows from the plasma generation space (401) to the exhaust space (402). An activating mechanism (42, 43) generates plasma by activating a first reactant gas that has been supplied to the plasma generation space (401). A second reactant gas supply section (411, 412) supplies a second reactant gas to the bottom of the plasma generation space (401), and an evacuation opening (23) evacuates the exhaust space (402) from a position that is higher than the bottom end of the partitions (41).

Abstract: A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.

Abstract: A substrate processing apparatus that can appropriately carry out desired plasma processing on a substrate. The substrate is accommodated in an accommodating chamber. An ion trap partitions the accommodating chamber into a plasma producing chamber and a substrate processing chamber. High-frequency antennas are disposed in the plasma producing chamber. A process gas is introduced into the plasma producing chamber. The substrate is mounted on a mounting stage disposed in the substrate processing chamber, and a bias voltage is applied to the mounting stage. The ion trap has grounded conductors and insulating materials covering surfaces of the conductors.

Abstract: A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.

Abstract: The objective of the present invention is to provide a manufacturing method of a fin field effect transistor easily and surely without a constriction on a bottom end portion of the fin, through a method that includes a process for removing damage caused by plasma etching by wet etching of a sacrificial oxide film using a SOI wafer. The method of the present invention includes a process for forming a projection in a fin shape by plasma etching a single crystal silicon layer on a SOI wafer, forming a sacrificial oxide film on the surface including anticipated damage to the projection, a process for removing the sacrificial oxide layer by wet etching, and a reflow process to reflow the buried oxide layer by heating.

Abstract: A titanium silicide film is formed on an Si wafer. At first, a plasma process using an RF is performed on the Si wafer. Then, a Ti-containing source gas is supplied onto the Si wafer processed by the plasma process and plasma is generated to form a Ti film. At this time, the Ti silicide film is formed by a reaction of the Ti film with Si of the Si wafer. The plasma process is performed on the Si wafer while the Si wafer is supplied with a DC bias voltage having an absolute value of 200V or more.

Abstract: A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.

Abstract: A worktable device is disposed inside a film formation process container for a semiconductor process. The worktable device includes a worktable including a top surface to place a target substrate thereon, and a side surface extending downward from the top surface, and a heater disposed in the worktable and configured to heat the substrate through the top surface. A CVD pre-coat layer covers the top surface and the side surface of the worktable. The pre-coat layer has a thickness not less than a thickness which substantially saturates the amount of radiant heat originating from heating of the heater and radiated from the top surface and the side surface of the worktable.

Abstract: There is provided a CVD method capable of inexpensively and effectively preventing films from being peeled off from the inner wall of a chamber and/or members in the chamber. By supplying a passivating gas into a chamber 11 while no object to be processed exists in the chamber 11, a passivation film is formed the inner wall of the chamber 11 and/or the surface of a member 20 in the chamber 11. Subsequently, by supplying a pre-coating gas into the chamber 11 while no object to be processed exists in the chamber, a pre-coat film is formed on the surface of the passivation film. Thereafter, an object W to be processed is introduced into the chamber 11, and a depositing gas is supplied into the chamber 11 to carry out a deposition process on the object W.