Abstract: Provided is a grain-oriented electrical steel sheet including a base steel sheet, an intermediate layer which is disposed in contact with the base steel sheet and mainly includes silicon oxide, and an insulation coating which is disposed in contact with the intermediate layer and mainly includes phosphate and colloidal silica, in which the base steel sheet contains predetermined chemical composition, BN having an average particle size of 50 to 300 nm is present, when an emission intensity of B is measured using glow discharge emission analysis, predetermined conditions are satisfied, and a ratio of a major axis to a minor axis of BN is 1.5 or less.

Abstract: A seal device of a vehicle wheel-bearing unit includes a leak prevention seal lip and a scatter prevention seal lip, wherein a front end part of the leak prevention seal lip is in slidable contact with an axially inboard surface of a rotational-side flange in a state of having an interference throughout an entire circumference, and an axially middle part of the scatter prevention seal lip is provided at a radially more outer position than an indifferentiable part that is present between an axially inboard surface of a thick wall part and an axially inboard surface of a thin wall part and in a state where the axially middle part of the scatter prevention seal lip is radially overlapped with the indifferentiable part.

Abstract: Construction is achieved that is able to prevent strain deformation in the axial direction of a flat plate section 21 of a cover 19a when a cylinder section 20 of the cover 19a, which covers the opening on the inside end in the axial direction of an internal space where an encoder 1 is located, is fitted into and fastened to the inside end section in the axial direction of an outer ring 7. A non-contact section 26a is formed all the way around the inside end section in the axial direction of the cylinder section 20 such that the outer diameter is smaller than the inner diameter of the inside end section in the axial direction of the outer ring, and the dimension L26 in the axial direction is two times or more the thickness dimension t19 of a plate member of the cover 19a.

Abstract: Construction is achieved that is able to prevent strain deformation in the axial direction of a flat plate section 21 of a cover 19a when a cylinder section 20 of the cover 19a, which covers the opening on the inside end in the axial direction of an internal space where an encoder 1 is located, is fitted into and fastened to the inside end section in the axial direction of an outer ring 7. A non-contact section 26a is formed all the way around the inside end section in the axial direction of the cylinder section 20 such that the outer diameter is smaller than the inner diameter of the inside end section in the axial direction of the outer ring, and the dimension L26 in the axial direction is two times or more the thickness dimension t19 of a plate member of the cover 19a.

Abstract: Construction is achieved that is able to prevent strain deformation in the axial direction of a flat plate section 21 of a cover 19a when a cylinder section 20 of the cover 19a, which covers the opening on the inside end in the axial direction of an internal space where an encoder 1 is located, is fitted into and fastened to the inside end section in the axial direction of an outer ring 7. A non-contact section 26a is formed all the way around the inside end section in the axial direction of the cylinder section 20 such that the outer diameter is smaller than the inner diameter of the inside end section in the axial direction of the outer ring, and the dimension L26 in the axial direction is two times or more the thickness dimension t19 of a plate member of the cover 19a.

Abstract: Construction is achieved that is able to prevent strain deformation in the axial direction of a flat plate section 21 of a cover 19a when a cylinder section 20 of the cover 19a, which covers the opening on the inside end in the axial direction of an internal space where an encoder 1 is located, is fitted into and fastened to the inside end section in the axial direction of an outer ring 7. A non-contact section 26a is formed all the way around the inside end section in the axial direction of the cylinder section 20 such that the outer diameter is smaller than the inner diameter of the inside end section in the axial direction of the outer ring, and the dimension L26 in the axial direction is two times or more the thickness dimension t19 of a plate member of the cover 19a.

Abstract: There is provided a bearing unit including one raceway ring 2 which is mounted on a vehicle body, the other raceway ring 4 which is disposed to face the one raceway ring 2 and is mounted on a wheel, and a plurality of rolling elements 6, 8 which are built in rollably between an outer ring raceway 2s and an inner ring raceway 4s which are formed continuously on facing surfaces of both the raceway rings 2, 4, respectively, along a circumferential direction, at least either of the raceway rings 2, 4 having a connecting flange 12a or a mounting flange 12a at which the raceway ring is mounted on the vehicle body or the wheel, wherein both the raceway rings 2, 4 are formed entirely through cold forging with no machining given to a surface of the flange 2a, 12a, while a quenching and tempering treatment by electromagnetic induction and grinding are given to at least the outer ring raceway 2s and the outer ring raceway 4s.

Abstract: A positive temperature coefficient thermistor device includes an insulating casing housing a pair of positive temperature coefficient thermistors. Each of the inner surfaces of a pair of opposed walls consisting of the side walls and the top and bottom walls of the case is provided with a recess formed of at least one pair of tapered surfaces sloping from the walls provided with a pair of electrodes towards a common electrode located in the center. The thermistors are arranged so that the rim thereof has at least a one-point contact with the tapered surfaces of the recesses.

Abstract: The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol. % of TiO.sub.2 and 50.50 to 46.00 mol. % of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of Al.sub.2 O.sub.3 and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.

Abstract: A ceramic comprising a first region comprises a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of Al.sub.2 O.sub.3, based on 100 mol parts of said principal components, in addition to the composition of the first region.

Abstract: A ceramic comprises a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of M.sub.g O, based on 100 mol parts of said principal components, in addition to the composition of the first region.

Abstract: A ceramic-forming composition comprises from 2.0 to 5.0 mol parts of MnO.sub.2 and from 0.05 to 0.30 mol part of Y.sub.2 O.sub.3 based on 100 mol parts of a main component comprising from 50.20 to 53.50 mol % of TiO.sub.2 and from 49.80 to 46.50 mol % of SrO. A semiconductor porcelain substrate, a dielectric porcelain substrate and a capacitor are produced by using the same ceramic-forming composition.

Abstract: The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol % of TiO.sub.2 and 50.50 to 46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of Al.sub.2 O.sub.3 and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.

Abstract: A ceramic comprises a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of MgO, based on 100 mol parts of said principal components, in addition to the composition of the first region.

Abstract: The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol% of TiO.sub.2 and 50.50 to 46.00 mol% of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of MgO and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.

Abstract: A ceramic comprising a first region comprises a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of Al.sub.2 O.sub.3, based on 100 mol parts of said principal components, in addition to the composition of the first region.

Abstract: A composition for semiconductor porcelain comprisies:(a) 35.5 to 70 mol % of MgTiO.sub.3,(b) 26.5 to 61 mol % of BaTiO.sub.3,(c) a grain boundary improver, and(d) 0.01 to 0.2 mol % of an element selected from rare earth elements and the elements belonging to the group V of the periodic table.