Abstract: According to one embodiment, a display device includes first semiconductor layers crossing a first scanning line in a non-display area, the first semiconductor layers being a in number, second semiconductor layers crossing a second scanning line in the non-display area, the second semiconductor layers being b in number, and an insulating film disposed between the first and second semiconductor layers and the first and second scanning lines, wherein a and b are integers greater than or equal to 2, and a is different from b, and the first and second semiconductor layers are both entirely covered with the insulating film.

Abstract: The present invention relates to the provision of a ferrule that can be connected even when the space for the connection is small. A ferrule of the present invention is configured to hold a plurality of optical transmission members and to be connected to another ferrule. The ferrule includes a first surface facing the end of the optical transmission members when the optical transmission members are held; and a plurality of second surfaces disposed opposite to the first surface in the ferrule. In the ferrule, the optical transmission members extend in the Z direction, and the ferrule is configured to be moved in a direction orthogonal to the Z direction to be connected to the other ferrule.

Abstract: A ferrule includes a holding part, a first surface and a second surface. The holding part includes a first holding recess including the first surface and a third surface facing the first surface, a first wall, at least one through hole that is open at the third surface and a fourth surface, the fourth surface being located on a side on which the plurality of optical transmission members is inserted, and a plurality of first grooves disposed at the first holding recess along an extending direction of the plurality of optical transmission members, the plurality of optical transmission members inserted to the at least one through hole is respectively disposed at the plurality of first grooves.

Abstract: A compound represented by the following formula (1), wherein X1 is O or S, and two or more of Y1, Y2 and Y3 are N, provided that the case where one or both of —Ar1-Ar2 and —Ar3-Ar4 is a p-terphenyl-3-yl group is excluded.

Abstract: It is aimed to properly correct the various types of distortion without a reduction in observation throughput.

Abstract: The present disclosure relates to a non-transitory computer-readable recording medium storing an analysis program that causes a computer to execute a process. The process includes sampling an instruction address of one of instructions included in a program during execution of the program, identifying a first function that includes the sampled instruction address in an address range, rewriting mark information associated with the identified first function, identifying first information corresponding to the instruction address of the first function among a plurality of first information based on the rewritten mark information, identifying second information corresponding to the instruction address of the first function among a plurality of second information based on the rewritten mark information, storing the first information and the second information in a memory, and analyzing performance of the program based on the first information and the second information stored in the memory.

Abstract: In a layered bonding material 10, a coefficient of linear expansion of a base material 11 is 5.5 to 15.5 ppm/K and a first surface and a second surface of the base material 11 are coated with pieces of lead-free solder 12a and 12b.

Abstract: An organic electroluminescence device includes: a first emitting layer including a first host material, a first organic material, and a first dopant material; and a second emitting layer including a second host material and a second dopant material, in which the first host material, the first organic material, and the second host material are different compounds in structure and satisfy Numerical Formula 1 and Numerical Formula 2. Numerical Formula 1: T1(H1)>T1(H3), Numerical Formula 2: T1(H2)>T1(H3) (In Numerical Formula 1 and Numerical Formula 2, T1(H1), T1(H2), T1(H3) are triplet energies of the first host material, the first organic material, and the second host material, respectively.

Abstract: A unit includes: a developing device configured to develop an electrostatic charge image that is formed on a surface of an image carrier, as a toner image with a developer including a flat toner containing a flat pigment, the developer being accommodated in the developing device; and a transfer device including an intermediate transfer belt onto which the toner image formed on the surface of the image carrier is primarily transferred, a primary transfer device configured to primarily transfer the toner image formed on the surface of the image carrier to a surface of the intermediate transfer belt, and a secondary transfer device configured to secondarily transfer the toner image on the surface of the intermediate transfer belt to a surface of a recording medium, wherein the intermediate transfer belt contains a resin and conductive carbon particles, and after the flat toner adheres to an outer circumferential surface of the intermediate transfer belt in a loading amount of 3 g/cm2, in a case where air is blow

Abstract: An organic electroluminescence device including a cathode, an anode, and one or two or more organic layers arranged between the cathode and the anode, wherein at least one layer of the one or two or more organic layers includes a first component and a second component, the first component is a compound represented by the following formula (1), and the second component is a compound represented by the following formula (2).

Abstract: A semiconductor device includes a semiconductor body, an electrode provided on a surface of the semiconductor body. The semiconductor body includes a first semiconductor layer and a second semiconductor layer provided between the first semiconductor layer and the second electrode. The second semiconductor layer includes first and second regions arranged along the surface of the semiconductor body. The first region has a surface contacting the electrode, and the second region includes second conductivity type impurities with a concentration lower than a concentration of the second conductivity type impurities at the surface of the first region. The second semiconductor layer has a first concentration of second conductivity type impurities at a first position in the second region, and a second concentration of second conductivity type impurities at a second position between the first position and the electrode, the second concentration being lower than the first concentration.

Abstract: A compound that further improves the capability of an organic electroluminescent device, an organic electroluminescent device having a further improved device capability, and an electronic device including the organic electroluminescent device are provided. A compound represented by the following formula (1): wherein the symbols in the formula (1) are defined in the description, an organic electroluminescent device including the compound, and an electronic device including the organic electroluminescent device.

Abstract: An organic EL device includes a first emitting layer and a second emitting layer. The first emitting layer contains a first host material and a first dopant material. The second emitting layer contains a second host material and a second dopant material. The first host material and the second host material are different from each other. The first dopant material is a compound having a maximum peak wavelength of 500 nm or less. The second dopant material is a compound having a maximum peak wavelength of 500 nm or less. The first dopant material and the second dopant material are different from each other. A triplet energy T1(H1) of the first host material and a triplet energy T1(H2) of the second host material satisfy a relationship of a numerical formula (Numerical Formula 1), T1(H1)>T1(H2) ??(Numerical Formula 1).

Abstract: An organic electroluminescent device includes a cathode, an anode, and organic layers intervening between the cathode and the anode, where the organic layers include a light emitting layer and an electron transporting layer, where the electron transporting layer contains a compound A represented by formula (1), and the light emitting layer contains a host material B represented by formula (10):

Abstract: An organic electroluminescence device includes: an emitting layer between an anode and a cathode; and a first layer between the cathode and the emitting layer, in which the first layer has a thickness of 50 nm or more, the first layer contains a compound represented by a formula (1) below, and the first layer contains no metal doping material. In the formula (100), A is a substituted or unsubstituted fused aryl group having 13 to 50 ring carbon atoms, or a substituted or unsubstituted fused heterocyclic group having 14 to 50 ring atoms.

Abstract: A compound represented by the following formula (1) and having a molecular weight of 650 or more: wherein Cz, n, Y1, Y2, Ar1, Ar2, L1, L2, L3, L4, R1, R2, R3, R4, R5, and R6 are as defined in the description, and an organic electroluminescent device which contains the compound.

Abstract: An organic EL device includes: an anode; a cathode; an anode side emitting unit; a cathode side emitting unit; a charge generating unit; a first organic layer having a thickness of 40 nm or less; and a second organic layer, in which the anode side emitting unit includes a first emitting layer which is provided close to the anode, a difference between an ionization potential Ip(H1) of a first host material in the first emitting layer and an ionization potential Ip(EBL) of a first organic material in the first organic layer satisfies a relationship of a numerical formula (Numerical Formula A1) below, Ip(H1)?Ip(EBL)?0.4 eV??(Numerical Formula A1).

Abstract: According to one embodiment, a display device includes first semiconductor layers crossing a first scanning line in a non-display area, the first semiconductor layers being a in number, second semiconductor layers crossing a second scanning line in the non-display area, the second semiconductor layers being b in number, and an insulating film disposed between the first and second semiconductor layers and the first and second scanning lines, wherein a and b are integers greater than or equal to 2, and a is different from b, and the first and second semiconductor layers are both entirely covered with the insulating film.

Abstract: Provide is a highly reliable semiconductor device in which stress generated in a semiconductor chip is reduced and an increase in thermal resistance is suppressed. The semiconductor device includes: a semiconductor chip including a first main electrode on one surface thereof and a second main electrode and a gate electrode on the other surface thereof; a first electrode connected to the one surface of the semiconductor chip via a first bonding material; and a second electrode connected to the other surface of the semiconductor chip via a second bonding material. The first electrode is a plate-shaped electrode and has a groove in a region overlapping with the semiconductor chip. The groove penetrates in a thickness direction of the first electrode and reaches an end portion of the first electrode when viewed in a plan view.