Abstract: An object of the invention is to provide a method of forming a fine conductive pattern. The method allows the fine conductive pattern whose thickness is relatively large to be formed easily, accurately, and surely. An insulating layer is formed on a substrate. A pattern resist is formed on the insulating layer. Then, the insulating layer is etched downward based on a profile of the pattern resist in a first etching step, and sidewalls of each of groove portions formed by the etching step of the insulating layer are etched sideways in a second etching step, so that overhang portions are defined at the lower edges of the pattern resist portions. Then, conductive film portions are formed by depositing a conductor on the pattern resist, and conductive films that are on the pattern resist are lifted off, so that a fine conductor pattern can be prepared.