Patents by Inventor Masato Yamada
Masato Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240399725Abstract: A two-layered laminate cloth (10) is composed of a base layer (12) formed from either one or both of a resin film and a nonwoven fabric, and a single circular knitted fabric layer (14) with a jersey knit texture. Here, the single circular knitted fabric forming the single circular knitted fabric layer (14) of the two-layered laminate cloth (10) has a unique knitted structure. That is, the Vh value (C/W) representing the ratio between the density in the warp direction (number of courses C) of the jersey knit texture and the density in the weft direction (number of wells W) of the jersey knit texture is within the range of 1.5 or more and 3.0 or less.Type: ApplicationFiled: October 12, 2022Publication date: December 5, 2024Inventor: Masato YAMADA
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Publication number: 20240390508Abstract: The present invention aims to provide a novel drug delivery system (DDS) technique capable of selectively delivering a drug (compound containing oligonucleotides for producing at least partially functional dystrophin protein) to muscle tissues such as cardiac muscle, skeletal muscle and the like and efficiently introducing the drug into the muscle cells. The present invention relates to a conjugate or a salt thereof including the following: (1) a peptide that binds to a transferrin receptor, and contains the amino acid sequence shown in SEQ ID NO: 1 (Ala-Val-Phe-Val-Trp-Asn-Tyr-Tyr-Ile-Ile-Ser-Cys); or an amino acid sequence resulting from substitution, deletion, addition, and/or insertion of not less than one and not more than 10 amino acid residues in the amino acid sequence shown in SEQ ID NO: 1, and (2) a compound comprising an oligonucleotide for producing an at least partially functional dystrophin protein.Type: ApplicationFiled: August 19, 2022Publication date: November 28, 2024Applicant: Takeda Pharmaceutical Company LimitedInventors: Takatoshi YOGO, Hideyuki SUGIYAMA, Kenichi MIYATA, Hiroyuki TAKADA, Masato YOSHIDA, Ryosuke TOKUNOH, Yasuo NAKAGAWA, Masato NIWA, Shigekazu SASAKI, Masaki OHUCHI, Naoki SAWAI, Masatoshi TAKUWA, Yujiro UCHINO, Yoko KANEMATSU, Koichiro FUKUDA, Takanori YOKOTO, Tetsuya NAGATA, Hiroki YAMADA
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Publication number: 20240384787Abstract: An automatic transmission control system includes an automatic transmission provided with a first friction engagement element including friction plates, a piston movable between engaged and disengaged positions for engaging and disengaging, respectively, the friction plates, and engaging and disengaging hydraulic pressure chambers applying engaging and disengaging hydraulic pressure for setting the piston at the engaged and disengaged positions, respectively, first and second hydraulic pressure control valves which adjust the engaging and disengaging hydraulic pressure, respectively, and a controller which controls the first and second hydraulic pressure control valves.Type: ApplicationFiled: April 17, 2024Publication date: November 21, 2024Inventors: Yuki Tsuchitori, Manabu Sasahara, Makoto Yamada, Masato Ohtani, Shigeru Nagayama
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Publication number: 20240384104Abstract: A carbon black capable of floating on a surface of a pure water when the carbon black is shaken together with the pure water at 25° C., and settling from the surface of the pure water at 50° C. or higher when the temperature of the pure water is increased stepwise from 25° C. and the carbon black is shaken together with the pure water at each temperature.Type: ApplicationFiled: September 27, 2022Publication date: November 21, 2024Applicant: DENKA COMPANY LIMITEDInventors: Michiya NAKASHIMA, Tatsuya NAGAI, Yusaku HARADA, Masato YAMADA, Kosuke TANAKA
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Patent number: 12129249Abstract: The aim of the present invention is to provide a method capable of producing an optically active pyrimidinamide derivative on an industrial scale. Compound (I) or a salt thereof is subjected to an asymmetric reduction reaction, the obtained compound (II) or a salt thereof is subjected to a deprotection reaction, and the obtained compound (III) or a salt thereof is reacted with compound (VI) or a salt thereof to obtain compound (V) or a salt thereof. wherein each symbol is as defined in the specification.Type: GrantFiled: February 19, 2021Date of Patent: October 29, 2024Assignee: DAY ONE BIOPHARMACEUTICALS, INC.Inventors: Sayuri Hirano, Yoshiyuki Takeda, Koji Nakamoto, Motoki Ikeuchi, Masato Kitayama, Masatoshi Yamada, Jun-ichi Kawakami
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Patent number: 12123773Abstract: A voltage control system has a light receiving array part receiving incident light and a light shielding array part shielding light receiving elements from incident light by a light shielding mechanism. The voltage control system also includes: a voltage application unit applying a bias voltage to an anode terminal; a multiplication state determination unit determining the multiplication state of the light shielding array part based on output signals from cathodes of the light receiving elements in the light shielding array part; and a voltage setting unit performing voltage setting for the bias voltage to be output from the voltage application unit based on the determination results from the multiplication state determination unit.Type: GrantFiled: September 5, 2023Date of Patent: October 22, 2024Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Masato Takemoto, Shota Yamada, Shinzo Koyama
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ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE, AND ELECTRONIC DEVICE
Publication number: 20240349528Abstract: An organic electroluminescence device includes an emitting region provided between a cathode and an anode, a first anode side organic layer, a second anode side organic layer, and a third anode side organic layer, in which the emitting region includes at least one emitting layer, the second anode side organic layer contains at least one compound different from the compound contained in the third anode side organic layer, the third anode side organic layer has a film thickness of 20 nm or more, and a difference NM2?NM3 between a refractive index NM2 of a constituent material contained in the second anode side organic layer and a refractive index NM3 of a constituent material contained in the third anode side organic layer satisfies a relationship of a numerical formula (Numerical Formula N1) below, N ? M 2 - N ? M 3 ? 0 . 0 ? 5 .Type: ApplicationFiled: January 13, 2022Publication date: October 17, 2024Applicant: IDEMITSU KOSAN CO., LTD.Inventors: Masato NAKAMURA, Emiko KAMBE, Kazuki NISHIMURA, Yusuke TAKAHASHI, Tasuku HAKETA, Satomi TASAKI, Tetsuya MASUDA, Keitaro YAMADA -
Patent number: 12120448Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a signal processing part configured to process a detection signal outputted from each of the pixel cells. The pixel cells each include an avalanche photodiode and output a voltage corresponding to a count number of photons received by the avalanche photodiode as the detection signal. The signal processing part includes a variation calculation part configured to calculate a variation between the pixel cells in the detection signal outputted from each of the pixel cells, and a correction calculation part configured to correct the detection signal outputted from each of the pixel cells, on the basis of the variation calculated by the variation calculation part.Type: GrantFiled: March 1, 2022Date of Patent: October 15, 2024Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shota Yamada, Motonori Ishii, Shigetaka Kasuga, Masato Takemoto, Yutaka Hirose
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Patent number: 12105453Abstract: A fixing device includes: a holding part that extends in a width direction of a recording medium being transported and that holds the recording medium; a pair of circulating parts that are attached to both ends of the holding part and that circulate to transport the recording medium; and a heating member that heats the recording medium in a non-contact manner and that is located in a space between the pair of circulating parts in the width direction.Type: GrantFiled: April 8, 2022Date of Patent: October 1, 2024Assignee: FUJIFILM Business Innovation Corp.Inventors: Kosuke Yamada, Tetsuro Kodera, Yoshiki Shimodaira, Masato Yamashita, Mitsuhiro Matsumoto, Takayuki Yamashita
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Patent number: 12078237Abstract: A transfer cooling structure of a vehicle is provided, the vehicle including a power source, a transmission, and a transfer device provided with a torque-distribution-control friction clutch, disposed in the order from forward of the vehicle. The structure includes a floor provided to the vehicle and having a tunnel part configured to cover a transmission case of the transmission and a transfer case of the transfer device from above, an insulator attached below the tunnel part to cover the transmission case and the transfer case while having a gap with respect to the transmission case and the transfer case, and a cooling acceleration part provided to the insulator protruding toward the transfer case from the floor side.Type: GrantFiled: January 31, 2022Date of Patent: September 3, 2024Assignee: Mazda Motor CorporationInventors: Syouta Yamada, Masayoshi Enomoto, Masato Fukuda, Takayuki Takamori, Kazuhiro Kageyama
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Publication number: 20240258462Abstract: An epitaxial wafer for an ultraviolet ray emission device including: a first supporting substrate being transparent for ultraviolet ray and having heat resistance; a seed crystal layer of an AlxGa1-xN (0.5<x?1) single crystal bonded on the first supporting substrate by laminating; and an epitaxial layer on the seed crystal layer, the epitaxial layer having: a first conductive clad layer containing AlyGa1-yN (0.5<y?1) as a main component; an AlGaN-based active layer; and a second conductive clad layer containing AlzGa1-zN (0.5<z?1) as a main component that are stacked and grown in this order. An inexpensive epitaxial wafer for an ultraviolet ray emission device having good light extraction efficiency and high quality and having an epitaxial layer of a III-group nitride such as AlN; and a method for manufacturing the same.Type: ApplicationFiled: June 27, 2022Publication date: August 1, 2024Applicants: Shin-Etsu Handotai Co., Ltd., SHIN-ETSU CHEMICAL CO., LTD.Inventors: Keitaro TSUCHIYA, Masato YAMADA, Kazutoshi NAGATA
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Patent number: 12049216Abstract: A vehicle control method is applied to a vehicle 1 in which a front wheel 2 is driven by an engine 4, and the method includes a basic torque setting step of setting basic torque to be generated by the engine 4, based on an operational state of the vehicle 1; a deceleration torque setting step of setting deceleration torque, based on an increase in steering angle of a steering apparatus 5 mounted on the vehicle 1; a torque generation step of controlling the engine 4 so that torque based on the basic torque and the deceleration torque is generated; and a deceleration torque changing step of changing the deceleration torque, based on a vehicle-width-direction mounting position of a steering wheel 6 and an operation direction of the steering wheel 6 when the steering angle is increased.Type: GrantFiled: September 4, 2019Date of Patent: July 30, 2024Assignees: MAZDA MOTOR CORPORATION, IKUTOKU GAKUENInventors: Takatoshi Tsukano, Shohei Yamada, Daisuke Umetsu, Fuminori Kato, Osamu Sunahara, Masato Abe, Makoto Yamakado, Yoshio Kano, Kazuki Sato
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Publication number: 20240234623Abstract: The present invention is a method for manufacturing an epitaxial wafer for an ultraviolet ray emission device, the method including steps of: preparing a supporting substrate having at least one surface composed of gallium nitride; forming a bonding layer on the surface composed of the gallium nitride of the supporting substrate; forming a laminated substrate having a seed crystal layer by laminating a seed crystal composed of an AlxGa1-xN (0.5<x?1.0) single crystal to the bonding layer; and epitaxially growing an ultraviolet emission device layer on the seed crystal layer of the laminated substrate, the ultraviolet emission device layer having at least: a first conductive clad layer composed of AlyGa1-yN (0.5<y?1.0); an AlGaN-based active layer; and a second conductive clad layer composed of AlzGa1-zN (0.5<z?1.0). This provides a method for manufacturing an inexpensive, high-quality epitaxial wafer for an ultraviolet ray emission device.Type: ApplicationFiled: February 16, 2022Publication date: July 11, 2024Applicants: SHIN-ETSU HANDOTAI CO., LTD., SHIN-ETSU HANDOTAI CO., LTD.Inventors: Keitaro TSUCHIYA, Masato YAMADA
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Publication number: 20240189461Abstract: The present invention aims to provide a radionuclide-labeled anti-MUC5AC humanized antibody that is superior in the specificity for mucin subtype 5AC (MUC5AC) and accumulation in tumor. The present invention provides a conjugate of a radionuclide and an antibody, wherein the radionuclide is a nuclide that emits ?-rays, and the antibody is a humanized antibody that specifically binds to mucin subtype 5AC and has a heavy chain variable region consisting of the amino acid sequence shown in any of SEQ ID NOs: 1 to 4, and a light chain variable region consisting of the amino acid sequence shown in any of SEQ ID NOs: 5 to 8.Type: ApplicationFiled: April 21, 2022Publication date: June 13, 2024Applicants: NIHON MEDI-PHYSICS CO., LTD., Sumitomo Pharma Co., Ltd.Inventors: Masato YAMADA, Fumiaki TAKENAKA, Kotaro HARADA, Momoko OMURA, Mitsuhiro MATONO, Kumiko OTSUKI, Yasushi OCHIAI, Takayuki MURAKAMI
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Patent number: 12005636Abstract: An additive manufacturing device performs manufacturing of an additively manufactured article by supplying a powder material to an irradiation region of an electron beam, laying and leveling the powder material, irradiating the powder material with the electron beam, and melting the powder material. The additive manufacturing device determines whether or not the powder material has scattered during manufacturing of the article. When it is determined that the powder material has scattered, an irradiation region R is heated by a heater before a new powder material is supplied to the irradiation region R. Manufacturing of the article is restarted after the new powder material has been supplied to the heated irradiation region.Type: GrantFiled: October 30, 2018Date of Patent: June 11, 2024Assignee: IHI CorporationInventors: Masato Yamada, Masashi Mouri, Yuki Kozue
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Publication number: 20240136466Abstract: The present invention is a method for manufacturing an epitaxial wafer for an ultraviolet ray emission device, the method including steps of: preparing a supporting substrate having at least one surface composed of gallium nitride; forming a bonding layer on the surface composed of the gallium nitride of the supporting substrate; forming a laminated substrate having a seed crystal layer by laminating a seed crystal composed of an AlxGa1-xN (0.5<x?1.0) single crystal to the bonding layer; and epitaxially growing an ultraviolet emission device layer on the seed crystal layer of the laminated substrate, the ultraviolet emission device layer having at least: a first conductive clad layer composed of AlyGa1-yN (0.5<y?1.0); an AlGaN-based active layer; and a second conductive clad layer composed of AlzGa1-zN (0.5<z?1.0). This provides a method for manufacturing an inexpensive, high-quality epitaxial wafer for an ultraviolet ray emission device.Type: ApplicationFiled: February 16, 2022Publication date: April 25, 2024Applicants: SHIN-ETSU HANDOTAI CO., LTD., SHIN-ETSU HANDOTAI CO., LTD.Inventors: Keitaro TSUCHIYA, Masato YAMADA
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Patent number: 11898078Abstract: A semiconductor phosphor configured to exhibit photoluminescence upon irradiation with excitation light, including: at least one active layer made of a compound semiconductor and containing an n-type or p-type dopant; and at least two barrier layers made of a compound semiconductor and having a larger band gap than the active layer. The active layer and the barrier layers are alternately stacked. This provides a semiconductor phosphor which allows easy wavelength adjustment, high efficiency and stability.Type: GrantFiled: October 11, 2018Date of Patent: February 13, 2024Assignee: SHIN-ETSU HANDOTAI CO., LTD.Inventors: Susumu Higuchi, Kenji Sakai, Masato Yamada, Masanobu Takahashi, Junya Ishizaki
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Publication number: 20230343890Abstract: An epitaxial wafer for an ultraviolet light emitting device, including, a heat-resistant first support substrate, a planarization layer with a thickness of 0.5 to 3 ?m on at least upper surface of the first support substrate, a group III nitride single crystal seed crystal layer with a thickness of 0.1 to 1.5 ?m, bonds to upper surface of the planarization layer by bonding, on the seed crystal layer, an epitaxial layer including at least a first conductivity type cladding layer containing AlxGa1-xN (0.5<x?1) as a main component, an AlGaN-based active layer, and a second conductivity type cladding layer containing AlyGa1-yN (0.5<y?1) as a main component being laminated and grown in order. Thus, an epitaxial wafer for an ultraviolet light emitting device enables high quality light emitting devices in the deep ultraviolet region (UVC: 200 to 250 nm) to be manufactured at a lower cost than before.Type: ApplicationFiled: August 26, 2021Publication date: October 26, 2023Applicants: SHIN-ETSU HANDOTAI CO., LTD., SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masato YAMADA, Junya ISHIZAKI, Keitaro TSUCHIYA, Yoshihiro KUBOTA, Minoru KAWAHARA
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Publication number: 20230340694Abstract: A substrate for group III nitride epitaxial growth and a method for producing the same. The substrate for group III nitride epitaxial growth includes: a supporting substrate having a structure in which a core consisting of nitride ceramics is wrapped in an encapsulating layer having a thickness of between 0.05 ?m and 1.5 ?m, inclusive; a planarizing layer provided on an upper surface of the supporting substrate, the planarizing layer having a thickness of between 0.5 ?m and 3.0 ?m, inclusive; and a seed crystal layer made of a single crystal of a group III nitride, the seed crystal layer being provided on an upper surface of the planarizing layer and having a thickness of between 0.1 ?m and 1.5 ?m, inclusive.Type: ApplicationFiled: April 12, 2021Publication date: October 26, 2023Applicants: SHIN-ETSU CHEMICAL CO., LTD., SHIN-ETSU HANDOTAI CO., LTD.Inventors: Yoshihiro KUBOTA, Minoru KAWAHARA, Masato YAMADA
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Patent number: 11748424Abstract: A visiting destination prediction device includes: a user position information acquiring unit configured to acquire user position information indicating a position of a user; an action history acquiring unit configured to acquire information on an action history of the user; and a visiting POI estimating unit configured to estimate a visiting POI which is a visiting destination of the user on the basis of a relationship between an acquired user position and a previously stored POI position and a relationship between the acquired action history of the user in a predetermined period and previously stored POI relevant information.Type: GrantFiled: January 8, 2019Date of Patent: September 5, 2023Assignee: NTT DOCOMO, INC.Inventors: Masato Yamada, Yusuke Fukazawa