Abstract: An organic EL device includes an emitting region provided between a cathode and an anode, a first anode-side-organic layer, a second anode-side-organic layer, and a third anode-side-organic layer, in which the emitting region includes at least a first emitting layer, the first anode-side-organic layer is in direct contact with the second anode-side-organic layer, the second anode-side-organic layer is in direct contact with the third anode-side-organic layer, the third anode-side-organic layer has a film thickness of 20 nm or more, the second anode-side-organic layer contains at least one compound different from a compound contained in the third anode-side-organic layer, the first emitting layer is a fluorescent emitting layer, and a refractive index NM2 of a constituent material contained in the second anode-side-organic layer and a refractive index NM3 of a constituent material contained in the third anode-side-organic layer satisfy a relationship of Numerical Formula NM, NM2>NM3??(Numerical Formula NM

Abstract: The present invention is a method for manufacturing an epitaxial wafer for an ultraviolet ray emission device, the method including steps of: preparing a supporting substrate having at least one surface composed of gallium nitride; forming a bonding layer on the surface composed of the gallium nitride of the supporting substrate; forming a laminated substrate having a seed crystal layer by laminating a seed crystal composed of an AlxGa1-xN (0.5<x?1.0) single crystal to the bonding layer; and epitaxially growing an ultraviolet emission device layer on the seed crystal layer of the laminated substrate, the ultraviolet emission device layer having at least: a first conductive clad layer composed of AlyGa1-yN (0.5<y?1.0); an AlGaN-based active layer; and a second conductive clad layer composed of AlzGa1-zN (0.5<z?1.0). This provides a method for manufacturing an inexpensive, high-quality epitaxial wafer for an ultraviolet ray emission device.

Abstract: There are provided a piezoelectric body of ytterbium-doped aluminum nitride, having a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium, and a MEMS device using the piezoelectric body. The piezoelectric body is represented by a chemical formula Al1-xYbxN where a value of x is more than 0 and less than 0.37 and having a lattice constant ratio c/a in a range of 1.53 or more and less than 1.6. The piezoelectric body with such a configuration has a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium.

Abstract: An organic electroluminescence device includes an emitting region between a cathode and an anode, a first anode side organic layer, and a second anode side organic layer. The emitting region includes at least a first emitting layer, the first anode side organic layer is in direct contact with the second anode side organic layer, the first anode side organic layer contains first and second organic materials, a content of the first organic material in the first anode side organic layer is less than 50 mass %, the second anode side organic layer contains a second hole transporting zone material, the first emitting layer is an emitting layer that emits fluorescence, and a refractive index NM1 of the constituent materials contained in the first anode side organic layer and a refractive index NM2 of the constituent material contained in the second anode side organic layer satisfy a relationship of NM1>NM2.

Abstract: Provided is a scandium-doped aluminum nitride with nitrogen polarity. The nitride material is represented by the chemical formula ScXMYAl1-X-YN. M is at least one or more elements among C, Si, Ge, and Sn, X is greater than 0 and not greater than 0.4, Y is greater than 0 and not greater than 0.2, and X/Y is less than or equal to 5. The nitride material has piezoelectricity with a polarization direction of nitrogen polarity opposite to the direction of thin film growth.

Abstract: In various embodiments, degradation of epoxy within packages for ultraviolet light-emitting devices is reduced or substantially eliminated via package venting, prevention of transmission of ultraviolet light to one or more regions of epoxy utilized in the package, and/or utilization of packaging schemes that reduce or avoid utilization of epoxy and/or specific metals.

Abstract: A transportation device includes a first transporter, a second transporter movable between a contact position and a separate position toward and away from the first transporter to hold a to-be-transported object between the second transporter and the first transporter in the contact position, and a transportation unit that transports the to-be-transported object to a nip area where the first transporter and the second transporter hold the to-be-transported object therebetween while the second transporter is located in the separate position. The second transporter moves from the separate position to the contact position to hold the to-be-transported object transported to the nip area by the transportation unit between the second transporter and the first transporter to transport the to-be-transported object.

Abstract: A transport device includes: a first transport body; a second transport body that is movable between a contact position and a separate position with respect to the first transport body and that nips a transported material with the first transport body at the contact position; and a transport section that includes a holder to hold a leading end portion of the transported material and that transports the transported material toward a nip region where the first transport body and the second transport body nip the transported material in a state in which the second transport body is located at the separate position. After holding of the leading end portion by the holder for the transported material transported by the transport section has been released, the second transport body nips the transported material with the first transport body and transports the transported material.

Abstract: A semiconductor phosphor configured to exhibit photoluminescence upon irradiation with excitation light, including: at least one active layer made of a compound semiconductor and containing an n-type or p-type dopant; and at least two barrier layers made of a compound semiconductor and having a larger band gap than the active layer. The active layer and the barrier layers are alternately stacked. This provides a semiconductor phosphor which allows easy wavelength adjustment, high efficiency and stability.

Abstract: A substrate for group III nitride epitaxial growth and a method for producing the same. The substrate for group III nitride epitaxial growth includes: a supporting substrate having a structure in which a core consisting of nitride ceramics is wrapped in an encapsulating layer having a thickness of between 0.05 ?m and 1.5 ?m, inclusive; a planarizing layer provided on an upper surface of the supporting substrate, the planarizing layer having a thickness of between 0.5 ?m and 3.0 ?m, inclusive; and a seed crystal layer made of a single crystal of a group III nitride, the seed crystal layer being provided on an upper surface of the planarizing layer and having a thickness of between 0.1 ?m and 1.5 ?m, inclusive.

Abstract: An epitaxial wafer for an ultraviolet light emitting device, including, a heat-resistant first support substrate, a planarization layer with a thickness of 0.5 to 3 ?m on at least upper surface of the first support substrate, a group III nitride single crystal seed crystal layer with a thickness of 0.1 to 1.5 ?m, bonds to upper surface of the planarization layer by bonding, on the seed crystal layer, an epitaxial layer including at least a first conductivity type cladding layer containing AlxGa1-xN (0.5<x?1) as a main component, an AlGaN-based active layer, and a second conductivity type cladding layer containing AlyGa1-yN (0.5<y?1) as a main component being laminated and grown in order. Thus, an epitaxial wafer for an ultraviolet light emitting device enables high quality light emitting devices in the deep ultraviolet region (UVC: 200 to 250 nm) to be manufactured at a lower cost than before.

Abstract: A visiting destination prediction device includes: a user position information acquiring unit configured to acquire user position information indicating a position of a user; an action history acquiring unit configured to acquire information on an action history of the user; and a visiting POI estimating unit configured to estimate a visiting POI which is a visiting destination of the user on the basis of a relationship between an acquired user position and a previously stored POI position and a relationship between the acquired action history of the user in a predetermined period and previously stored POI relevant information.

Abstract: A substrate for group-III nitride epitaxial growth and a method for producing the same is capable of fabricating a high-quality group III nitride single crystal at low cost. The substrate for group-III nitride epitaxial growth includes: a supporting substrate having a structure in which a core consisting of nitride ceramics is wrapped in an encapsulating layer having a thickness of between 0.05 ?m and 1.5 ?m, inclusive; a planarizing layer provided on an upper surface of the supporting substrate, the planarizing layer having a thickness of between 0.5 ?m and 3.0 ?m, inclusive; and a seed crystal layer consisting of a single crystal with a thickness of between 0.1 ?m and 1.5 ?m, inclusive, provided on an upper surface planarizing layer and having an uneven pattern on the surface.

Abstract: An additive manufacturing device is an additive manufacturing device manufacturing an additively manufactured article by melting or sintering layered powder by partially applying energy to the powder. The additive manufacturing device includes a powder holding unit holding the layered powder, a heating unit preheating the powder held by the powder holding unit, a reflection unit where a reflective film including a reflective surface is disposed, the reflective surface reflecting radiant heat radiated from an object including at least one of the powder and the additively manufactured article to the powder holding unit side, and a reflective surface update unit disposing a new reflective surface in the reflection unit by moving the reflective film.

Abstract: An alkaline battery includes a negative electrode. The negative electrode includes a negative electrode active material particle. The negative electrode active material particle includes a center part, a covering layer, and island-form layers. The center part includes zinc as a constituent element. The covering layer covers a surface of the center part and includes gallium as a constituent element. The island-form layers are present on a surface of the covering layer and include indium as a constituent element.

Abstract: The purpose of the present invention is to provide a heat-sealing device capable of preventing problems associated with cap sealing performance and/or sensation of the cap being open due to an inappropriate cap temperature.

Abstract: A visiting destination prediction device includes: a user position information acquiring unit configured to acquire user position information indicating a position of a user; a stationary position deriving unit configured to derive a stationary position of the user on the basis of the acquired user position information; and a visiting POI estimating unit configured to estimate a visiting POI which is a visiting destination of the user on the basis of a relationship between the derived stationary position of the user and a predetermined POI position of a POI which is able to be the visiting destination of the user. The stationary position deriving unit derives the stationary position which is expressed by an area on the basis of an error and a degree of dispersion of a series of pieces of the acquired user position information.

Abstract: The purpose of the present invention is to provide a detection device that detects the occurrence of an event (so-called “double capping”) in which two caps are disposed on one container. To that end, the detection device (10, 10A) of the present invention has two types of sensors provided on a production line (100) for a commercial product in which an opening (1A) of a container (1) is sealed with a cap (2), said sensors being a proximity sensor (3) along a path where the container (1) moves and a sensor (4: for example, a transmission sensor) equipped with a transmitter (4A), which is inside the same path, and a receiver (4B). An area detected by the sensors (3, 4) is an area where the cap (2) is not present in a normal state (a state in which double capping has not occurred), but where a subsequent cap (2-1) is present if two caps (2) in a row have been attached to one container (1).

Abstract: A heat exchanger includes a heat exchanger body having a plurality of layer portions each having a plurality of flow paths, and having a configuration in which adjacent layer portions are joined to each other, an inflow header being configured that a fluid is introduced into the inflow header to flow into the plurality of flow paths, an outflow header being configured that a fluid flowing through the plurality of flow paths merges, a cover portion covering all joint portions of the adjacent layer portions or all joint portions of components of layer portions, the joint portions exposed on an outer surface of the heat exchanger body at a portion other than a portion where the inflow header and the outflow header are disposed, and a lead-out portion connected to the cover portion and forming an internal flow path communicating with a space between the cover portion and the heat exchanger body. The lead-out portion is configured to emit a fluid to a predetermined region set in advance.

Abstract: An object is to predict a more accurate demand. A demand prediction device (1) includes an information storing unit (10) configured to store a plurality of demand prediction models, each of the demand prediction models being a prediction model configured to predict a demand in a demand state relating to demand and differing between each demand prediction model and a state prediction model that is a prediction model predicting a state degree that is a degree to which a designated timing is applicable to each demand state; and a demand predicting unit (15) configured to predict a demand on the basis of the demands predicted by the plurality of demand prediction models stored by the information storing unit (10) and the state degree predicted by the state prediction model stored by the information storing unit (10).