Abstract: An irradiation pattern of a laser beam within a target region is controlled based on external signals each related to a driving direction and a driving speed, a result obtained by detection of an obstacle, and signals related to distances to the obstacle. For example, at the time of a right turn, an irradiation pattern for increasing irradiation frequency on a portion shifted in a right-turn direction from a center axis in a driving direction is set. At the time of high-speed driving, an irradiation pattern for increasing irradiation frequency on a center portion of a forward region in the driving direction is set. When the obstacle is detected and a distance to the obstacle is shorter than a threshold distance, an irradiation pattern for increasing irradiation frequency in the vicinity of the obstacle is set.

Abstract: A DSP control circuit monitors a scan position of laser beams on the target region based on a signal from a PSD. Further, the DSP control circuit measures an amount of laser beams reflected from the target region for each scan position based on a signal from a beam receiving portion. The DSP control circuit compares an amount of reflected beams P0 at a scan position (reference position) on the target region with an amount of reflected beams Pk at a scan position adjacent to the scan position. If Pk/P0 is equal to or smaller than a threshold value Rs, it is determined that the scan position corresponding to the amount of reflected beams Pk is nonuniform in irradiation intensity of the laser beams. The DSP control circuit increases emission intensity plurality of times for the position that is determined to be nonuniform in irradiation intensity of the laser beams. With this, it is possible to make irradiation intensityies of the laser beams uniform over the target region.

Abstract: A scan trajectory of a laser beam is controlled based on external signals each related to a driving direction and a driving speed, a result obtained by detection of an obstacle, and signals related to distances to the obstacle. For example, at the time of a right turn, a scan trajectory for increasing scan frequency on a portion shifted in a right-turn direction from a center axis in a driving direction is set. At the time of high-speed driving, a scan trajectory for increasing scan frequency on a center portion in the driving direction is set. When the obstacle is detected at a position corresponding to a distance shorter than a threshold distance, a scan trajectory for increasing scan frequency in the vicinity of the obstacle is set. Detection of the obstacle and monitoring of a state thereof are adequately and smoothly performed at the time of changing of the driving direction, the time of high-speed driving, and the time of detection of the obstacle.

Abstract: A light emitting device 100 of the invention is the one using a first main surface of a compound semiconductor layer portion, having a light emitting layer section 24 therein, as a light extraction surface, and having, on the second main surface side of the compound semiconductor layer, a device-substrate 7 bonded thereto while placing, in between, a main metal layer 10 having a reflective surface reflecting light from the light emitting layer section 24 towards the light extraction surface side, and is characterized in that the device-substrate 7 is composed of a Si substrate having a conductivity type of p type, and that the device-substrate 7 has, as being formed on the main surface thereof on the main metal layer 10 side, a contact layer 31 having Al as a major component.

Abstract: In a beam irradiation device of the present invention, laser beams emitted from a semiconductor laser impinge on an irradiation lens supported by a lens actuator. The laser beams that have passed through the irradiation lens change in outgoing angle in the direction of a y-z plane as the lens actuator is driven. A laser beam scan in the target region is thus performed. A part of the laser beams that have passed through the irradiation lens is reflected and separated by a beam splitter. The separated beams are converged on a PSD through a converging lens. A DSP control circuit monitors a scan position of the laser beams that have passed through the irradiation lens based on a signal from the PSD. When an irradiation position has deviated from a scan trajectory, the DSP control circuit controls an actuator driving circuit to draw the irradiation position back onto the scan trajectory. This beam irradiation device can realize a smooth and stable beam scan operation with a simple construction.

Abstract: In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

Abstract: An optimum cutting tool is selected interactively in a cutting tools selection section, and a tooling sheet using the selected cutting tool is generated and output in a tooling sheet preparation section. The cutting tool selection section searches a cutting tool database using a unique order number for each cutting tool as a search key, and outputs a list of cutting tool search results, and when a declaration of intention to select an insert via the list is made, parameters indicating the recommended cutting conditions for the designated cutting tool are transferred to the tooling sheet preparation section. The tooling sheet preparation section generates and outputs tooling sheet item data for some items by computation with a prescribed formula, based on the transferred parameters. As a result, an accurate, interchangeable, and readily expandable system for the preparation of tooling sheets can be provided.

Abstract: A light emitting device capable of readily produce a pseudo-continuous spectrum covering a wide wavelength regions at low costs, and of totally solving various problems which have resided in the conventional light sources, and a lighting apparatus using this device is provided. The light emitting device 10 is configured so that an active layer in a double hetero light emitting layer portion composed of compound semiconductors comprises a plurality of emission unit layers differing from each other in band gap energy, and so as to emit a simulatively synthesized light having a pseudo-continuous spectrum ensuring an emission intensity of 5% or more of a peak intensity over a wavelength region of 50 nm or more.

Abstract: A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded.

Abstract: A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7?, 9? on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7?, 9?, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7?, 9?.

Abstract: A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.

Abstract: A temperature sensitive fluid type fan coupling apparatus obtains linear characteristics without spoiling the drag performance. The fan coupling apparatus has a sealed case divided by a partition into an oil reservoir chamber and a torque transfer chamber. A valve is adapted to open and close an outflow regulating port in the partition in accordance with external ambient temperature. A driving disk is in the torque transfer chamber, and the transfer of torque is controlled by increasing and decreasing an effective contact surface of the oil with the driving disk. An idle oil reservoir chamber is formed in a hollow inner portion of the driving disk. A communication port is made in a side wall of the oil reservoir chamber and communicates with the torque transfer clearance. The communication port is closer to an inner circumference of the torque transfer chamber.

Abstract: An optimum cutting tool is selected interactively in a cutting tools selection section, and a tooling sheet using the selected cutting tool is generated and output in a tooling sheet preparation section. The cutting tool selection section searches a cutting tool database using a unique order number for each cutting tool as a search key, and outputs a list of cutting tool search results, and when a declaration of intention to select an insert via the list is made, parameters indicating the recommended cutting conditions for the designated cutting tool are transferred to the tooling sheet preparation section. The tooling sheet preparation section generates and outputs tooling sheet item data for some items by computation with a prescribed formula, based on the transferred parameters. As a result, an accurate, interchangeable, and readily expandable system for the preparation of tooling sheets can be provided.

Abstract: A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded.

Abstract: The light-emitting device 100 has an ITO electrode layer 8 for applying drive voltage for light emission to a light emitting layer section 24, where the light from the light emitting layer section 24 is extracted as being passed through the ITO electrode layer 8. Between the light emitting layer section 24 and the ITO electrode layer 8, an electrode contact layer 7 composed of In-containing GaAs is located so as to contact with such ITO electrode layer 8, where occupied areas and unoccupied areas for the electrode contact layer 7 are arranged in a mixed manner on the contact interface with the transparent electrode layer 8. The electrode contact layer 7 can be obtained by annealing a stack 13, which comprises a GaAs layer 7″ formed on the light emitting layer section 24 and the ITO electrode layer 8 formed so as to contact with the GaAs layer 7″, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer 7″.

Abstract: In the light emitting device having, a light emitting layer portion and a current spreading layer, respectively composed of a Group III-V compound semiconductor, formed on a single crystal substrate, the light emitting layer portion is formed on the single crystal substrate by the metal organic vapor-phase epitaxy process, and on such light emitting layer portion the current spreading layer is formed by the hydride vapor-phase epitaxy process. A high-concentration doped layer is also formed in a surficial area including the main surface on the electrode forming side of the current spreading layer, so as to have a carrier concentration of p-type dopant higher than that in the residual portion of the current spreading layer.

Abstract: In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

Abstract: A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.

Abstract: A light emitting device 1 has a light emitting layer portion in which a p-type cladding layer 2, an active layer 33 and an n-type cladding layer 34 are stacked in this order, and the p-type cladding layer 2 is composed of a p-type MgxZn1-xO (where, 0<x≦1) layer. By forming these layers by the MOVPE process, oxygen deficiency during the film formation is effectively prevented from occurring, and a p-type MgxZn1-xO layer having desirable characteristics can be obtained.

Abstract: A light emitting device capable of readily produce a pseudo-continuous spectrum covering a wide wavelength regions at low costs, and of totally solving various problems which have resided in the conventional light sources, and a lighting apparatus using this device is provided. The light emitting device 10 is configured so that an active layer in a double hetero light emitting layer portion composed of compound semiconductors comprises a plurality of emission unit layers differing from each other in band gap energy, and so as to emit a simulatively synthesized light having a pseudo-continuous spectrum ensuring an emission intensity of 5% or more of a peak intensity over a wavelength region of 50 nm or more.