Abstract: A method of manufacturing an electron source with electron emitting elements is provided. The method has a process of depositing a deposit substance in an area including at least an area of the electron emitting element from which area electrons are emitted. The depositing process is performed in an atmosphere of a gas containing at least a source material of the deposit substance, the gas having a mean free path allowing the gas to take a viscous flow state.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.

Abstract: An image-forming apparatus comprises a rear plate on which an electron-emitting device is provided, a face plate having an image-forming member and arranged to be opposed to the rear plate, and a spacer provided between the face plate and the rear plate. The spacer comprises a spacer base plate and a coating layer including organic resin and carbon. At least part of the carbon is exposed from the surface of the coating layer. The image-forming apparatus displays an image with a high luminance and a high color saturation over a prolonged time.

Abstract: In an electron beam apparatus including an enclosure in which an electron-emitting device having an electron-emitting region between opposite electrodes is disposed, the electron-emitting device exhibits such a characteristic as that an emission current is uniquely determined with respect to a device voltage. The interior of the enclosure is maintained under an atmosphere effective to prevent structural changes of the electron-emitting device. An image-forming apparatus includes an enclosure in which an electron source and an image-forming member are disposed, the electron source having the above electron-emitting device. An emission current is stable with a very small change in the amount of electrons emitted, a sharp image is produced with high contrast, and gradation control is easily carried out.

Abstract: Disclosed herein is a process for producing a printed substrate, comprising a step of applying droplets of a liquid containing a material for a desired component to be formed on a substrate to the surface of the substrate to form the component on the substrate, wherein the process comprises, prior to the step of applying the droplets to the substrate surface, a step of subjecting the substrate to a surface treatment in such a manner that the contact angle of the droplet applied with the surface of the substrate falls within a range of from 20° to 50°.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: An electron-emitting device comprises a pair of electrodes arranged on a substrate and an electroconductive film connecting said electrodes and having an electron-emitting region formed therein. The electron-emitting region contains a fissure having an even width of less than 50 nm and preferably shows a voltage applicable length of less than 5 nm. An electron source comprising a plurality of such electron-emitting devices is capable of realizing uniform electron beam emission and an image-forming apparatus comprising such an electron source is suitable for high resolution image display.

Abstract: An electron-emitting device includes a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &mgr;m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.

Abstract: An electron-emitting device comprises an electroconductive film including an electron-emitting region and a pair of electrodes for applying a voltage to the electroconductive film. The electron-emitting region is formed by applying a film of organic substance to the electroconductive film, carbonizing the organic substance by electrically energizing the electroconductive film, and forming a fissure or fissures in the electroconductive film prior to the carbonization. The electron-emitting device constitutes an electron source having a plurality of electron-emitting devices, and further an image-forming device comprising an electron source and an image-forming member arranged in an envelope.

Abstract: An electron-emitting device comprises a pair of oppositely disposed device electrodes and an electroconductive film electrically connecting the device electrodes and having an electron-emitting region formed as part thereof. The electroconductive film is partly or entirely covered by a metal oxide coat containing as principal ingredient with a melting point higher than that of the material of principal ingredient of the electroconductive film. The electroconductive film has also a deposited layer comprising carbon, a carbon compound or a mixture thereof.

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1&mgr;m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.

Abstract: In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher melting point than that of a material of the electrdconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature at which the material develops a vapor pressure of 1.3×10−3 Pa, than that of a material of the electroconductive film. A manufacturing method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: An image-forming apparatus comprises a rear plate on which an electron-emitting device is provided, a face plate having an image-forming member and arranged to be opposed to the rear plate, and a spacer provided between the face plate and the rear plate. The spacer comprises a spacer base plate and a coating layer including organic resin and carbon. At least part of the carbon is exposed from the surface of the coating layer. The image-forming apparatus displays an image with a high luminance and a high color saturation over a prolonged time.

Abstract: In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature at which the material develops a vapor pressure of 1.3.times.10.sup.-3 Pa, than that of a material of the electroconductive film. A manufacturing method for an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.

Abstract: A semiconductor device comprises, at least, an insulative layer; a semiconductor layer provided in contact with the insulative layer; first and second electrodes provided in contact with the semiconductor layer; and a third electrode provided through the insulative layer. The semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 .ANG. and an amorphous layer.

Abstract: An electron emission device can be driven with a low voltage and has an excellent mass production capability. A display device, such as a color flat panel or the like, which uses such electron emission devices has an excellent display quality. The electron emission device includes a first electrode, on which a plurality of fine particles of an electron emission body obtained by terminating carbon bodies formed on metal fine particles, serving as nuclei, with a low-work-function material via oxygen are partially arranged, on a first substrate, and a second electrode where a voltage for drawing electrons from the electron emission body into a vacuum is applied. A metal of the metal fine particles is a catalytic metal. The catalytic metal is an iron-family element, such as Ni, Co, Fe or the like, or a platinum-family element, such as Pd, Ir or Pt. The carbon bodies are made of graphite. The low-work-function material is an alkaline metal or an alkaline earth metal.

Abstract: A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.

Abstract: An electron-emitting device comprises a pair of electrodes arranged on a substrate and an electroconductive film connecting said electrodes and having an electron-emitting region formed therein. The electron-emitting region contains a fissure having an even width of less than 50 nm and preferably shows a voltage applicable length of less than 5 nm. An electron source comprising a plurality of such electron-emitting devices is capable of realizing uniform electron beam emission and an image-forming apparatus comprising such an electron source is suitable for high resolution image display.