Patents by Inventor Masato Yonezawa
Masato Yonezawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11390948Abstract: A film forming apparatus for performing a predetermine film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.Type: GrantFiled: May 30, 2019Date of Patent: July 19, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Masato Yonezawa, Shigehiro Miura, Hiroyuki Akama, Koji Yoshii
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Patent number: 11328901Abstract: A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.Type: GrantFiled: March 23, 2020Date of Patent: May 10, 2022Assignee: Tokyo Electron LimitedInventors: Shigehiro Miura, Masato Yonezawa, Takehiro Fukada, Yoshitaka Enoki, Yuji Sawada
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Publication number: 20200312621Abstract: A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.Type: ApplicationFiled: March 23, 2020Publication date: October 1, 2020Inventors: Shigehiro MIURA, Masato YONEZAWA, Takehiro FUKADA, Yoshitaka ENOKI, Yuji SAWADA
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Patent number: 10668512Abstract: A particle removal method is provided for removing particles on a film etched using a fluorine-containing gas. In the method, a mixed gas of an activated oxygen-containing gas and hydrogen gas added to the activated oxygen-containing gas is supplied to the etched film.Type: GrantFiled: December 14, 2017Date of Patent: June 2, 2020Assignee: Tokyo Electron LimitedInventors: Jun Sato, Masato Yonezawa, Takashi Chiba
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Publication number: 20190276935Abstract: A film forming apparatus for performing a predetermine film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.Type: ApplicationFiled: May 30, 2019Publication date: September 12, 2019Inventors: Masato YONEZAWA, Shigehiro MIURA, Hiroyuki AKAMA, Koji YOSHII
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Patent number: 10385453Abstract: A film forming apparatus for performing a predetermined film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.Type: GrantFiled: August 18, 2016Date of Patent: August 20, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Masato Yonezawa, Shigehiro Miura, Hiroyuki Akama, Koji Yoshii
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Patent number: 10103009Abstract: An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.Type: GrantFiled: May 26, 2016Date of Patent: October 16, 2018Assignee: Tokyo Electron LimitedInventors: Shigehiro Miura, Hitoshi Kato, Jun Sato, Takeshi Kobayashi, Masato Yonezawa
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Publication number: 20180169716Abstract: A particle removal method is provided for removing particles on a film etched using a fluorine-containing gas. In the method, a mixed gas of an activated oxygen-containing gas and hydrogen gas added to the activated oxygen-containing gas is supplied to the etched film.Type: ApplicationFiled: December 14, 2017Publication date: June 21, 2018Inventors: Jun SATO, Masato YONEZAWA, Takashi CHIBA
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Patent number: 9941343Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.Type: GrantFiled: July 5, 2017Date of Patent: April 10, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Masato Yonezawa, Hajime Kimura, Yu Yamazaki
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Patent number: 9865454Abstract: A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing gas supply part that is disposed apart from the first process gas supply part in a circumferential direction of the rotary table and supplies a second process gas to the surface of the substrate, a separation gas supply part that supplies a separation gas for separating the first process gas and the second process gas, a plasma generator that converts the second process gas into plasma, and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward.Type: GrantFiled: October 24, 2014Date of Patent: January 9, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Hitoshi Kato, Hiroyuki Kikuchi, Masato Yonezawa, Jun Sato, Shigehiro Miura
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Publication number: 20170309695Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.Type: ApplicationFiled: July 5, 2017Publication date: October 26, 2017Inventors: Shunpei Yamazaki, Jun Koyama, Masato Yonezawa, Hajime Kimura, Yu Yamazaki
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Patent number: 9711582Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.Type: GrantFiled: May 4, 2016Date of Patent: July 18, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Masato Yonezawa, Hajime Kimura, Yu Yamazaki
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Publication number: 20170051403Abstract: A film forming apparatus for performing a predetermine film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.Type: ApplicationFiled: August 18, 2016Publication date: February 23, 2017Inventors: Masato YONEZAWA, Shigehiro MIURA, Hiroyuki AKAMA, Koji YOSHII
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Publication number: 20160268105Abstract: An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.Type: ApplicationFiled: May 26, 2016Publication date: September 15, 2016Inventors: Shigehiro MIURA, Hitoshi KATO, Jun SATO, Takeshi KOBAYASHI, Masato YONEZAWA
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Publication number: 20160247871Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.Type: ApplicationFiled: May 4, 2016Publication date: August 25, 2016Inventors: Shunpei Yamazaki, Jun Koyama, Masato Yonezawa, Hajime Kimura, Yu Yamazaki
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Patent number: 9376751Abstract: An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.Type: GrantFiled: February 5, 2015Date of Patent: June 28, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Shigehiro Miura, Hitoshi Kato, Jun Sato, Takeshi Kobayashi, Masato Yonezawa
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Patent number: 9337243Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.Type: GrantFiled: July 13, 2015Date of Patent: May 10, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Masato Yonezawa, Hajime Kimura, Yu Yamazaki
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Publication number: 20150380472Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.Type: ApplicationFiled: July 13, 2015Publication date: December 31, 2015Inventors: Shunpei Yamazaki, Jun Koyama, Masato Yonezawa, Hajime Kimura, Yu Yamazaki
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Publication number: 20150235813Abstract: An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.Type: ApplicationFiled: February 5, 2015Publication date: August 20, 2015Inventors: Shigehiro MIURA, Hitoshi KATO, Jun SATO, Takeshi KOBAYASHI, Masato YONEZAWA
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Patent number: 9082677Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.Type: GrantFiled: February 6, 2013Date of Patent: July 14, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Masato Yonezawa, Hajime Kimura, Yu Yamazaki