Abstract: Disclosed is a current and voltage detection circuit comprising: a voltage input terminal to which a direct current voltage is applied; a voltage comparison circuit that determines which of the applied voltage and a predetermined voltage is larger; a switching element connected in series to a current-voltage conversion unit, between a positive electrode terminal of the power supply and a reference potential point of the circuit; and a control circuit that generates a control signal of the switching element in response to output of the voltage comparison circuit, wherein the circuit turns ON the switching element and determines the voltage, by the voltage comparison circuit, when a voltage supply capability or current supply capability is low; and turns OFF the switching element by the control signal and determines the voltage, when the voltage comparison circuit determines that the voltage is higher than the predetermined voltage.

Abstract: A semiconductor integrated circuit includes an output MOS transistor and a back gate control circuit. The output MOS transistor includes a first electrode connected to a power supply terminal and a second electrode connected to an output terminal. The output MOS transistor is configured to turn on and off to cause communications to be performed with another semiconductor integrated circuit connected to the output terminal. The back gate control circuit is configured to control an electric potential at a back gate of the output MOS transistor so that a current path between the power supply terminal and the output terminal at a time when a power supply connected to the power supply terminal is turned off is interrupted.

Abstract: A plurality of current control MOS transistors and a plurality of current detection systems are provided, each of the current detection systems including a current detection transistor current-mirror connected to the current control MOS transistor and a current-voltage converter connected in series to the current detection transistor. The current detection systems are switched between one another for operation in response to the intensity of a charging current flowing through the current control transistors.

Abstract: A plurality of current control MOS transistors and a plurality of current detection systems are provided, each of the current detection systems including a current detection transistor current-mirror connected to the current control MOS transistor and a current-voltage converter connected in series to the current detection transistor. The current detection systems are switched between one another for operation in response to the intensity of a charging current flowing through the current control transistors.

Abstract: Disclosed is a current and voltage detection circuit comprising: a voltage input terminal to which a direct current voltage is applied; a voltage comparison circuit that determines which of the applied voltage and a predetermined voltage is larger; a switching element connected in series to a current-voltage conversion unit, between a positive electrode terminal of the power supply and a reference potential point of the circuit; and a control circuit that generates a control signal of the switching element in response to output of the voltage comparison circuit, wherein the circuit turns ON the switching element and determines the voltage, by the voltage comparison circuit, when a voltage supply capability or current supply capability is low; and turns OFF the switching element by the control signal and determines the voltage, when the voltage comparison circuit determines that the voltage is higher than the predetermined voltage.