Abstract: It is to realize a function clock generation circuit with which a wiring area and cell area, and further a power consumption can be reduced, and a timing design is easy. An input terminal D of a through latch circuit LTC11 is connected to an input line of an enable signal EN, an inversion clock input terminal G is connected to the input line of the clock signal, one input terminal of a NAND gate NAND11 is connected to an output terminal Q of a through latch circuit LTC11, the other input terminal is connected to the input terminal of the clock signal CK, and the output terminal is connected to the input terminal of an inverter INV11. Then, in the through latch circuit LTC11, the enable signal EN is sampled at the rising edge of the clock signal CK, and according to the value, the clock pulse immediately after the sampling is passed or blocked by the logical gate LGT comprising a NAND gate NAND11 and an inverter INV11.

Abstract: A novel method for making complementary semiconductor IC devices is described. The method includes the steps of: preparing a N-type semiconductor substrate; preparing a first mask for forming a P-well in the N-type substrate; forming the P-well in the N-type substrate using the first mask; preparing a second mask for forming a first P-type diffusion regions in the substrate and in the P-well; preparing a third mask for forming N-type diffusion regions in the substrate and in the P-well; preparing a fourth mask for forming a second P-type diffusion regions in the unoccupied areas of the N-type substrate and the P-well by carrying out reversing, AND and OR processing of the first, second and third masks, and forming the P-type diffusion regions in the prescribed areas of the substrate and the P-well by placing the fourth mask on the substrate.

Abstract: A complementary metal oxide semiconductor logic circuit comprises a signal line OR-connecting a plurality of MOS transistors which are turned on/off by a plurality of decoder outputs. The signal line is divided by a MOS-FET in two portions including a portion on an output side provided with an inverter and an OR-connected transistors side, so that respective portions of the signal line as divided are precharged by separate precharging MOS transistors.