Abstract: A booth apparatus includes a space forming member that includes a first surface, a second surface, and a third surface and that forms a space surrounded by the first surface, the second surface, and the third surface, an electronic blackboard that is provided on any of the first surface, the second surface, or the third surface in the space, and a projecting device that projects an image onto at least one surface out of the first surface, the second surface, or the third surface on which the electronic blackboard is not provided.

Abstract: An information processing system includes a processor configured to: link a first file image with a first user image and display the first file image and the first user image, the first file image representing a file linked with an account of a first user, the first user image representing the first user; and link a second file image with a second user image and display the second file image and the second user image together with the first file image and the first user image, the second file image representing a file linked with an account of a second user, the second user image representing the second user, the second user being different from the first user.

Abstract: A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed by supplying acetic acid to the joint surface of the processing target wafer. Then, the joint surface of the processing target wafer is inspected. Then, based on an inspection result, the adhesive on the joint surface of the processing target wafer is removed and the oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed.

Abstract: This joining method of joining a target substrate and a support substrate includes: an adhesive coating operation that includes coating the target substrate or the support substrate with an adhesive; an adhesive removing operation that includes supplying a solvent for removing the adhesive onto an outer peripheral portion of the target substrate or the support substrate, which is coated with the adhesive in the adhesive coating operation, to thereby remove the adhesive on the outer peripheral portion; and a joining operation that includes pressing and joining the target substrate and the support substrate together, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the support substrate coated with no adhesive, or pressing and joining the support substrate, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the target substrate coated with no adhesive.

Abstract: The present disclosure is a joining method that joins a target substrate and a support substrate, wherein the method has: a joining operation that includes pressing and joining the target substrate and the support substrate by interposing an adhesive therebetween; and an adhesive removing operation that includes supplying a solvent of the adhesive to the outer adhesive that is the adhesive between the target substrate and the support substrate protruding in the joining operation from the outer lateral surface of the stacked substrate made by joining the target substrate and the support substrate, and to remove the surface of the outer adhesive so that the outer adhesive is formed at a predetermined size.

Abstract: Provided is a bonding system, which includes: a processing station in which specified processes are performed on a first substrate and a second substrate; and a carry-in/carry-out station in which the first substrate, the second substrate or a laminated substrate obtained by bonding the first substrate and the second substrate is carried into and out of the processing station. The processing station includes: a first processing apparatus configured to coat the first substrate with the bonding agent using a bonding agent injecting part; a second processing apparatus provided with a bevel cleaning unit for cleaning a bevel portion of the first substrate coated with the bonding agent; and a bonding apparatus configured to bond the first substrate and the second substrate through the bonding agent and a release agent. The first processing apparatus or the second processing apparatus further includes a release agent injection part for injecting the release agent.

Abstract: When joining a processing target substrate and a supporting substrate together by suction-holding the processing substrate and the supporting substrate respectively on a first holding unit and a second holding unit arranged to face each other and pressing the second holding unit toward the first holding unit while heating the substrates by heating mechanisms of the holding units, the present invention preheats at least the processing target substrate before suction-holding the processing target substrate on the first holding unit to suppress generation of particles when joining the processing target substrate and the supporting substrate together so as to properly perform the joining of the processing target substrate and the supporting substrate.

Abstract: A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed by supplying acetic acid to the joint surface of the processing target wafer. Then, the joint surface of the processing target wafer is inspected. Then, based on an inspection result, the adhesive on the joint surface of the processing target wafer is removed and the oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed.

Abstract: Disclosed is a bonding system which efficiently performs a bonding of a substrate to a support substrate, thereby improving the throughput in a bonding processing. The disclosed bonding system includes a loading/unloading station and a processing station. The processing station includes: an adhesive applying device configured to apply an adhesive to the wafer; a protective agent applying device configured to apply a protective agent to the wafer, a remover applying device configured to apply a remover to the support wafer, a heat processing device configured to heat the wafer or the support wafer which is applied with at least the adhesive, the protective agent or the remover, at a predetermined temperature, a bonding device configured to bond the wafer to the support wafer through the adhesive, the protective agent and the remover, and a wafer transfer area configured to transfer the wafer, the support wafer or the bonded wafer.

Abstract: A separation apparatus for separating a superposed substrate into a processing target substrate and a supporting substrate, includes: one holding part holding the processing target substrate via a tape; another holding part holding the supporting substrate; and a moving mechanism moving the another holding part in a vertical direction while holding an outer peripheral portion thereof to continuously separate the supporting substrate held by the another holding part from the processing target substrate held by the one holding part starting from an outer peripheral portion toward a central portion of the supporting substrate, wherein the moving mechanism includes: a first moving part holding the another holding part and moving only the outer peripheral portion of the another holding part in the vertical direction; and a second moving part moving the first moving part and the another holding part in the vertical direction.

Abstract: A peeling device according to the present disclosure includes a holding unit, a plurality of suction moving units, a state detection unit and a control unit. The holding unit is configured to hold a first substrate of a superposed substrate having the first substrate and a second substrate joined. The suction moving units are configured to suction-hold the second substrate of the superposed substrate and move the second substrate in a direction away from a surface of the first substrate. The state detection unit is configured to detect a peeled-off state of the second substrate from the first substrate. The control unit is configured to control operation timings of the suction moving units so that the second substrate is peeled off from the first substrate gradually from one end of the second substrate toward the other end thereof, based on the peeled-off state detected by the state detection unit.

Abstract: The present disclosure is a joining method that joins a target substrate and a support substrate, wherein the method has: a joining operation that includes pressing and joining the target substrate and the support substrate by interposing an adhesive therebetween; and an adhesive removing operation that includes supplying a solvent of the adhesive to the outer adhesive that is the adhesive between the target substrate and the support substrate protruding in the joining operation from the outer lateral surface of the stacked substrate made by joining the target substrate and the support substrate, and to remove the surface of the outer adhesive so that the outer adhesive is formed at a predetermined size.

Abstract: This joining method of joining a target substrate and a support substrate includes: an adhesive coating operation that includes coating the target substrate or the support substrate with an adhesive; an adhesive removing operation that includes supplying a solvent of the adhesive onto an outer peripheral portion of the target substrate or the support substrate, which is coated with the adhesive in the adhesive coating operation, to thereby remove the adhesive on the outer peripheral portion; and a joining operation that includes pressing and joining the target substrate and the support substrate together, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the support substrate coated with no adhesive, or pressing and joining the support substrate, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the target substrate coated with no adhesive.

Abstract: A substrate treatment system includes a plurality of treatment apparatuses, a position adjustment apparatus adjusting a center position of the substrate, a substrate transfer apparatus transferring the substrate to the treatment apparatuses and the position adjustment apparatus, and a control unit controlling operations of the apparatuses. The substrate transfer apparatus includes an arm part curved along a peripheral edge portion of the substrate with a radius of curvature larger than a radius of the substrate, and a holding part projecting inward from the arm part and holding a rear surface of the substrate. The position adjustment apparatus includes a mounting table which holds a central portion of the rear surface of the substrate and is rotatable and horizontally movable. The control unit controls the mounting table such that the center position of the substrate held on the mounting table is aligned with a center position of the arm part.

Abstract: Disclosed is a bonding system which efficiently performs a bonding of a substrate to a support substrate, thereby improving the throughput in a bonding processing. The disclosed bonding system includes a loading/unloading station and a processing station. The processing station includes: an adhesive applying device configured to apply an adhesive to the wafer; a protective agent applying device configured to apply a protective agent to the wafer, a remover applying device configured to apply a remover to the support wafer, a heat processing device configured to heat the wafer or the support wafer which is applied with at least the adhesive, the protective agent or the remover, at a predetermined temperature, a bonding device configured to bond the wafer to the support wafer through the adhesive, the protective agent and the remover, and a wafer transfer area configured to transfer the wafer, the support wafer or the bonded wafer.

Abstract: When joining a processing target substrate and a supporting substrate together by suction-holding the processing substrate and the supporting substrate respectively on a first holding unit and a second holding unit arranged to face each other and pressing the second holding unit toward the first holding unit while heating the substrates by heating mechanisms of the holding units, the present invention preheats at least the processing target substrate before suction-holding the processing target substrate on the first holding unit to suppress generation of particles when joining the processing target substrate and the supporting substrate together so as to properly perform the joining of the processing target substrate and the supporting substrate.

Abstract: A joint apparatus that joins a processing target substrate and a supporting substrate together, includes: a processing container that is capable of hermetically closing an inside thereof; a joint unit that joins the processing target substrate and the supporting substrate together by pressing the processing target substrate and the supporting substrate via an adhesive; and a superposed substrate temperature regulation unit that temperature-regulates a superposed substrate joined in the joint unit, wherein the joint unit and the superposed substrate temperature regulation unit are arranged in the processing container, A delivery unit for delivering the processing target substrate, the supporting substrate, or the superposed substrate to/from an outside of the processing container is provided in the processing container, and the superposed substrate temperature regulation unit is provided in the delivery unit.

Abstract: A cleaning method of cleaning a joint surface of a processing target substrate separated from a superposed substrate, while the processing target substrate is placed inside an annular frame and held by a tape bonded to a surface of the frame and a non-joint surface of the processing target substrate, the cleaning method including: a placement step of placing a cleaning jig to face the processing target substrate such that a supply surface of the cleaning jig for supplying a solvent for the adhesive onto the joint surface of the processing target substrate covers the joint surface and a distance between the supply surface and the joint surface is a predetermined distance; and a cleaning step of then supplying the solvent between the supply surface and the joint surface and diffusing the supplied solvent over the joint surface by a surface tension.

Abstract: A substrate treatment system includes a plurality of treatment apparatuses, a position adjustment apparatus adjusting a center position of the substrate, a substrate transfer apparatus transferring the substrate to the treatment apparatuses and the position adjustment apparatus, and a control unit controlling operations of the apparatuses. The substrate transfer apparatus includes an arm part curved along a peripheral edge portion of the substrate with a radius of curvature larger than a radius of the substrate, and a holding part projecting inward from the arm part and holding a rear surface of the substrate. The position adjustment apparatus includes a mounting table which holds a central portion of the rear surface of the substrate and is rotatable and horizontally movable. The control unit controls the mounting table such that the center position of the substrate held on the mounting table is aligned with a center position of the arm part.

Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.