Abstract: A film formation apparatus includes: a chamber which an interior thereof can be made vacuum; a rotary table provided inside the chamber, holding a workpiece, and circulating and transporting the workpiece in a circular trajectory; a film formation unit including a target formed of film formation material and a plasma generator which turns sputtering gas introduced between the target and the rotary table into plasma, the film formation unit depositing by sputtering film formation material on the workpiece; a film processing unit processing the film deposited by the film formation unit on the workpiece; holding regions each holding the workpiece and provided in a circular film formation region facing the film formation unit and the film processing unit that is a region other than the rotation axis in the rotary table; and a heater provided in the holding regions.

Abstract: The hydrogen production apparatus includes: a rectifier supplied with first electrical power from outside, and that outputs direct-current second electrical power; an electrolyzer supplied with the second electrical power and that carries out electrolysis of an alkaline aqueous solution; a pure water tank that retains a pure water; a pure water pipe connected between the pure water tank and an electrolyzer, allowing the pure water to be distributed from the pure water tank to the electrolyzer; an inert gas cylinder that contains an inert gas; and a first valve connected between the inert gas cylinder and the pure water pipe, is the first valve being closed when the first electrical power is supplied, and being open when the first electrical power is not supplied. The inert gas is introduced into the pure water pipe by opening the first valve.

Abstract: The hydrogen production apparatus includes: a rectifier supplied with first electrical power from outside, and that outputs direct-current second electrical power; an electrolyzer supplied with the second electrical power and that carries out electrolysis of an alkaline aqueous solution; a pure water tank that retains a pure water; a pure water pipe connected between the pure water tank and an electrolyzer, allowing the pure water to be distributed from the pure water tank to the electrolyzer; an inert gas cylinder that contains an inert gas; and a first valve connected between the inert gas cylinder and the pure water pipe, is the first valve being closed when the first electrical power is supplied, and being open when the first electrical power is not supplied. The inert gas is introduced into the pure water pipe by opening the first valve.

Abstract: The hydrogen production apparatus includes: a rectifier supplied with first electrical power from outside, and that outputs direct-current second electrical power; an electrolyzer supplied with the second electrical power and that carries out electrolysis of an alkaline aqueous solution; a pure water tank that retains a pure water; a pure water pipe connected between the pure water tank and an electrolyzer, allowing the pure water to be distributed from the pure water tank to the electrolyzer; an inert gas cylinder that contains an inert gas; and a first valve connected between the inert gas cylinder and the pure water pipe, is the first valve being closed when the first electrical power is supplied, and being open when the first electrical power is not supplied. The inert gas is introduced into the pure water pipe by opening the first valve.

Abstract: The hydrogen production apparatus includes: a rectifier supplied with first electrical power from outside, and that outputs direct-current second electrical power; an electrolyzer supplied with the second electrical power and that carries out electrolysis of an alkaline aqueous solution; a pure water tank that retains a pure water; a pure water pipe connected between the pure water tank and an electrolyzer, allowing the pure water to be distributed from the pure water tank to the electrolyzer; an inert gas cylinder that contains an inert gas; and a first valve connected between the inert gas cylinder and the pure water pipe, is the first valve being closed when the first electrical power is supplied, and being open when the first electrical power is not supplied. The inert gas is introduced into the pure water pipe by opening the first valve.

Abstract: A radiation detector includes an electrode substrate having plural photoelectric transfer elements which convert visible light into electrical signals, a scintillator layer formed on the electrode substrate and converting radial rays into visible light, and a protective film includes a drying agent film and a moisture-proof film. The drying agent film is formed on at least the scintillator layer. The moisture-proof film is formed on the drying agent film.

Abstract: A method for manufacturing an organic electroluminescence device includes: dissolving an organic material in a solvent to prepare an organic solution; forming an organic solution layer by coating a substrate with the organic solution; and forming an organic material layer by drying the organic solution layer. At least one of water concentration and oxygen concentration in the solvent is controlled to 100 mass ppm or less.

Abstract: Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing several times higher than that during dipping. This copper-based metal polishing solution contains at least one acid selected from aminoacetic acid and aminosulfuric acid, an oxidizer, and water.

Abstract: Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing several times higher than that during dipping. This copper-based metal polishing solution contains at least one acid selected from aminoacetic acid and aminosulfuric acid, an oxidizer, and water.

Abstract: A polishing apparatus comprise a lower surface plate rotatably provided and having a polishing surface for polishing an object, and an upper surface plate for pressing the object against the lower surface plate, wherein the polishing surface can be dressed by a dresser comprising a dressing member approachable to and separable from the polishing surface, the dressing member having a dressing surface to be brought into contact with the polishing surface, the dressing surface being shaped as a hollow oval.

Abstract: Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing several times higher than that during dipping. This copper-based metal polishing solution contains at least one acid selected from aminoacetic acid and aminosulfuric acid, an oxidizer, and water.

Abstract: The present invention provides a polishing method including the steps of forming a film made of material containing a metal as a main component over a substrate having depressed portions on a surface thereof so as to fill the depressed portions with the film, and polishing the film by a chemical mechanical polishing method using a polishing agent containing a chemical agent responsible for forming a protection film on a surface of the film by reacting with the material containing a metal as a main component, thereby forming a conductive film in the depressed portions.

Abstract: Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing several times higher than that during dipping. This copper-based metal polishing solution contains at least one organic acid selected from aminoacetic acid and amidosulfuric acid, an oxidizer, and water.

Abstract: Disclosed is a copper-based metal polishing solution which hardly dissolves a Cu film or a Cu alloy film when the film is dipped into the solution, and has a dissolution velocity during polishing several times higher than that during dipping. This copper-based metal polishing solution contains at least one organic acid selected from aminoacetic acid and amidosulfuric aminosulfuric acid, an oxidizer, and water.