Abstract: A radio-frequency power amplifier device includes: a carrier amplifier semiconductor device and a peak amplifier semiconductor device on a multilayer submount substrate; a bias power supply semiconductor device; second radio-frequency signal wiring that transmits a radio-frequency signal to the carrier amplifier semiconductor device and the peak amplifier semiconductor device; and carrier-amplifier bias power supply wiring that is wired in a third wiring layer and supplies a bias power supply voltage. The second radio-frequency signal wiring and the carrier-amplifier bias power supply wiring intersect in a plan view. The radio-frequency power amplifier device includes: a shield pattern that is located in a second wiring layer between a first wiring layer and the third wiring layer; and one or more connection vias disposed in an extension direction of the carrier-amplifier bias power supply wiring. The one or more connection vias are connected to the shield pattern.

Abstract: A radio-frequency power amplifier device includes: a carrier amplifier semiconductor device and a peak amplifier semiconductor device on a multilayer submount substrate; a bias power supply semiconductor device; second radio-frequency signal wiring that transmits a radio-frequency signal to the carrier amplifier semiconductor device and the peak amplifier semiconductor device; and carrier-amplifier bias power supply wiring that is wired in a third wiring layer and supplies a bias power supply voltage. The second radio-frequency signal wiring and the carrier-amplifier bias power supply wiring intersect in a plan view. The radio-frequency power amplifier device includes: a shield pattern that is located in a second wiring layer between a first wiring layer and the third wiring layer; and one or more connection vias disposed in an extension direction of the carrier-amplifier bias power supply wiring. The one or more connection vias are connected to the shield pattern.

Abstract: A power amplification device includes: a first semiconductor chip including a first main surface and a second main surface; a first field-effect transistor, a first drain finger part, a plurality of first gate finger parts, and a source finger part; a sub-mount substrate including a third main surface and a fourth main surface; and a first filled via provided penetrating from the third main surface to the fourth main surface. In plan view, the first filled via has a rectangular shape. A long side direction of the first filled via is parallel to a long side direction of the plurality of first gate finger parts. In plan view, the first filled via is positioned to overlap part of one first gate finger part included in the plurality of first gate finger parts.

Abstract: A monolithic semiconductor device includes: a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a band gap larger than a band gap of the first nitride semiconductor layer; a first transistor disposed on the substrate and including the first nitride semiconductor layer and the second nitride semiconductor layer, the first transistor being of a high-electron-mobility transistor (HEMT) type for power amplification; and a first bias circuit disposed on the substrate and including a second transistor of the HEMT type disposed outside a propagation path of a radio-frequency signal inputted to the first transistor, the first bias circuit applying bias voltage to a gate of the first transistor.

Abstract: A high-frequency amplifier includes: a carrier amplifier which amplifies a first signal; a peak amplifier which amplifies a second signal; a first matching circuit which is connected to the output terminal of the carrier amplifier; a second matching circuit which is connected to the output terminal of the peak amplifier; a first transmission line which is connected between the first matching circuit and the second matching circuit, and has an electric length that is less than ¼ of the wavelength of the center frequency of a predetermined frequency band. The phase rotation by a series inductor which is included in each of the first matching circuit and the second matching circuit and has one end that has been grounded is opposite to the phase rotation by the first transmission line.

Abstract: A power amplification device includes: a first semiconductor chip including a first main surface and a second main surface; a first field-effect transistor, a first drain finger part, a plurality of first gate finger parts, and a source finger part; a sub-mount substrate including a third main surface and a fourth main surface; and a first filled via provided penetrating from the third main surface to the fourth main surface. In plan view, the first filled via has a rectangular shape. A long side direction of the first filled via is parallel to a long side direction of the plurality of first gate finger parts. In plan view, the first filled via is positioned to overlap part of one first gate finger part included in the plurality of first gate finger parts.

Abstract: A high-frequency transistor includes a source electrode, a drain electrode, a gate electrode, and a gate drive line that applies a voltage to the gate electrode. An impedance adjustment circuit is connected between the gate electrode and the gate drive line. A characteristic impedance of the gate electrode is Z1, when a connecting point between the impedance adjustment circuit and the gate electrode is viewed from the impedance adjustment circuit. A characteristic impedance of the gate drive line is Z2, when a connecting point between the impedance adjustment circuit and the gate drive line is viewed from the impedance adjustment circuit. X that denotes a characteristic impedance of the impedance adjustment circuit is a value between Z1 and Z2.

Abstract: A high-frequency amplifier includes: a carrier amplifier amplifying a first signal; a peak amplifier amplifying a second signal; a first transmission line connected between output terminals of the carrier amplifier and the peak amplifier, and having an electrical length equal to one-quarter wavelength of a center frequency in the predetermined frequency band; a second transmission line connected between one end of the first transmission line and the output terminal of the high-frequency amplifier, and having an electrical length equal to one-quarter wavelength of the center frequency; and an impedance compensation circuit with one end connected to a node between the first transmission line and the second transmission line. At the center frequency, an imaginary part of an impedance during viewing of the impedance compensation circuit from the node is opposite in polarity from an imaginary part of an impedance during viewing of the second transmission line from the node.

Abstract: A high-frequency transistor includes a source electrode, a drain electrode, a gate electrode, and a gate drive line that applies a voltage to the gate electrode. An impedance adjustment circuit is connected between the gate electrode and the gate drive line. A characteristic impedance of the gate electrode is Z1, when a connecting point between the impedance adjustment circuit and the gate electrode is viewed from the impedance adjustment circuit. A characteristic impedance of the gate drive line is Z2, when a connecting point between the impedance adjustment circuit and the gate drive line is viewed from the impedance adjustment circuit. X that denotes a characteristic impedance of the impedance adjustment circuit is a value between Z1 and Z2.

Abstract: A high-frequency transistor includes a source electrode, a drain electrode, a gate electrode, and a gate drive line that applies a voltage to the gate electrode. An impedance adjustment circuit is connected between the gate electrode and the gate drive line. A characteristic impedance of the gate electrode is Z1, when a connecting point between the impedance adjustment circuit and the gate electrode is viewed from the impedance adjustment circuit. A characteristic impedance of the gate drive line is Z2, when a connecting point between the impedance adjustment circuit and the gate drive line is viewed from the impedance adjustment circuit. X that denotes a characteristic impedance of the impedance adjustment circuit is a value between Z1 and Z2.

Abstract: A high-frequency transistor includes a source electrode, a drain electrode, a gate electrode, and a gate drive line that applies a voltage to the gate electrode. An impedance adjustment circuit is connected between the gate electrode and the gate drive line. A characteristic impedance of the gate electrode is Z1, when a connecting point between the impedance adjustment circuit and the gate electrode is viewed from the impedance adjustment circuit. A characteristic impedance of the gate drive line is Z2, when a connecting point between the impedance adjustment circuit and the gate drive line is viewed from the impedance adjustment circuit. X that denotes a characteristic impedance of the impedance adjustment circuit is a value between Z1 and Z2.

Abstract: A high-frequency amplifier includes: a carrier amplifier amplifying a first signal; a peak amplifier amplifying a second signal; a first transmission line connected between output terminals of the carrier amplifier and the peak amplifier, and having an electrical length equal to one-quarter wavelength of a center frequency in the predetermined frequency band; a second transmission line connected between one end of the first transmission line and the output terminal of the high-frequency amplifier, and having an electrical length equal to one-quarter wavelength of the center frequency; and an impedance compensation circuit with one end connected to a node between the first transmission line and the second transmission line. At the center frequency, an imaginary part of an impedance during viewing of the impedance compensation circuit from the node is opposite in polarity from an imaginary part of an impedance during viewing of the second transmission line from the node.

Abstract: A power amplifier includes an amplification transistor which performs power amplification, a bias circuit which outputs a bias voltage to a base of the amplification transistor, a control terminal to which a control voltage is applied for controlling switching between an operating state and a stopping state of the bias circuit, and a bias voltage adjustment circuit connected to the control terminal. The bias voltage adjustment circuit includes a variable capacitance element which is connected to the control terminal and whose capacitance value decreases as the control voltage increases, a discharge circuit which discharges electric charge accumulated in the variable capacitance element to the control terminal, and a control circuit which is connected to the bias circuit and controls the bias voltage. The bias voltage adjustment circuit outputs, to the bias circuit, a bias voltage adjustment signal which increases the bias voltage for a predetermined period after the control voltage is applied.

Abstract: A power amplifier includes an amplification transistor which performs power amplification, a bias circuit which outputs a bias voltage to a base of the amplification transistor, a control terminal to which a control voltage is applied for controlling switching between an operating state and a stopping state of the bias circuit, and a bias voltage adjustment circuit connected to the control terminal. The bias voltage adjustment circuit includes a variable capacitance element which is connected to the control terminal and whose capacitance value decreases as the control voltage increases, a discharge circuit which discharges electric charge accumulated in the variable capacitance element to the control terminal, and a control circuit which is connected to the bias circuit and controls the bias voltage. The bias voltage adjustment circuit outputs, to the bias circuit, a bias voltage adjustment signal which increases the bias voltage for a predetermined period after the control voltage is applied.

Abstract: A high-frequency power amplifier that amplifies a high-frequency input signal and outputs a signal having one power selected from a plurality of powers includes a high output route that is a circuit, which amplifies the input signal and outputs a signal of a high power, and a medium output route that is a circuit, which amplifies the input signal and outputs a signal of a medium power. The high output route includes a high-output amplifier that amplifies the input signal, an output matching circuit that is connected to an output node of the high-output amplifier, and a switch element that is connected to an output node of the output matching circuit. The medium output route includes a medium-output amplifier that amplifies the input signal and a switch element that is connected between an output node of the medium-output amplifier and an output node of the output matching circuit.

Abstract: A high-frequency power amplifier that amplifies a high-frequency input signal and outputs a signal having one power selected from a plurality of powers includes a high output route that is a circuit, which amplifies the input signal and outputs a signal of a high power, and a medium output route that is a circuit, which amplifies the input signal and outputs a signal of a medium power. The high output route includes a high-output amplifier that amplifies the input signal, an output matching circuit that is connected to an output node of the high-output amplifier, and a switch element that is connected to an output node of the output matching circuit. The medium output route includes a medium-output amplifier that amplifies the input signal and a switch element that is connected between an output node of the medium-output amplifier and an output node of the output matching circuit.

Abstract: A constant-voltage circuit includes: first and second field-effect transistors; a first node connected to the drains of the first and second field-effect transistors; a second node connected to the gates of the first and second field-effect transistors; a bipolar transistor whose collector is connected to the second node; a resistor connected to the source of the second field-effect transistor and the collector of the bipolar transistor; and a bias circuit that is connected to the source of the second field-effect transistor and supplies a bias voltage to the base of the bipolar transistor, wherein a power supply is connected to the first node and a constant voltage is outputted from the source of the first field-effect transistor.

Abstract: The radio frequency power amplifier is connected between an other end of the first switching element and an other end of the second switching element, supplies power to a second amplifier via the first switching element and a second matching circuit, and includes a first power supply line for supplying power to the third amplifier via a second switching element and a third matching circuit, and the other end of the first switching element is connected to an input node of the first matching circuit, the other end of the second switching element is connected to the input node of the first matching circuit via the first power supply line, and an impedance of an output side of the RF power amplifier as viewed from an output node of the third amplifier is higher than an impedance of the RF power amplifier as viewed from an output node of the second amplifier.

Abstract: The radio frequency power amplifier is connected between an other end of the first switching element and an other end of the second switching element, supplies power to a second amplifier via the first switching element and a second matching circuit, and includes a first power supply line for supplying power to the third amplifier via a second switching element and a third matching circuit, and the other end of the first switching element is connected to an input node of the first matching circuit, the other end of the second switching element is connected to the input node of the first matching circuit via the first power supply line, and an impedance of an output side of the RF power amplifier as viewed from an output node of the third amplifier is higher than an impedance of the RF power amplifier as viewed from an output node of the second amplifier.

Abstract: A constant-voltage circuit includes: first and second field-effect transistors; a first node connected to the drains of the first and second field-effect transistors; a second node connected to the gates of the first and second field-effect transistors; a bipolar transistor whose collector is connected to the second node; a resistor connected to the source of the second field-effect transistor and the collector of the bipolar transistor; and a bias circuit that is connected to the source of the second field-effect transistor and supplies a bias voltage to the base of the bipolar transistor, wherein a power supply is connected to the first node and a constant voltage is outputted from the source of the first field-effect transistor.