Abstract: In order to aim at shortening the time of refueling by maintaining the function of prevention of discharge of vapor, similar to that of a conventional canister in the case of other than refueling during resting of an engine while the flow resistance in the canister becomes smaller during refueling, there is provided a canister in which a plate is vertically arranged in a chamber charged therein with absorbent in the canister, and filter support pins are projected from opposite surfaces of the plate while filters are arranged at the tip end faces of the filter support pins, and in which a plurality of constriction passages are formed being arranged in a horizontal direction only in the upper part of the plate.

Abstract: In order to aim at shortening the time of refueling by maintaining the function of prevention of discharge of vapor, similar to that of a conventional canister in the case of other than refueling during resting of an engine while the flow resistance in the canister becomes smaller during refueling, there is provided a canister in which a plate is vertically arranged in a chamber charged therein with absorbent in the canister, and filter support pins are projected from opposite surfaces of the plate while filters are arranged at the tip end faces of the filter support pins, and in which a plurality of constriction passages are formed being arranged in a horizontal direction only in the upper part of the plate.

Abstract: A semiconductor device comprises a semiconductor substrate, an active region positioned in a portion of the substrate and a field insulating layer surrounding the active region and partially embedded in the substrate. The semiconductor device according to the present invention further comprises an insulating member positioned under and attached to the bottom of the field insulating layer and surrounding the active region with the field insulating layer. Because of this insulating member, the thickness of the field insulating layer can be reduced to a small value. Therefore, a PN junction formed in the active region can be terminated at the insulating member without any sharp curvature, that is, the PN junction can extend flatly. Further, silicon crystal near the field insulating layer has only a small amount of defects or no defect so that any abnormal diffusion of impurity near the field insulating layer can be prevented.

Abstract: A semiconductor device comprises a semiconductor substrate, an active region positioned in a portion of the substrate and a field insulating layer surrounding the active region and partially embedded in the substrate. The semiconductor device according to the present invention further comprises an insulating member positioned under and attached to the bottom of the field insulating layer and surrounding the active region with the field insulating layer. Because of this insulating member, the thickness of the field insulating layer can be reduced to a small value. Therefore, a PN junction formed in the active region can be terminated at the insulating member without any sharp curvature, that is, the PN junction can extend flatly. Further, silicon crystal near the field insulating layer has only a small amount of defects or no defect so that any abnormal diffusion of impurity near the field insulating layer can be prevented.