Abstract: A method of dividing a wafer having a plurality of areas, which are sectioned by the streets formed on the front surface in a lattice pattern and a plurality of devices, which are formed in the sectioned areas, along streets, the method comprising a first cutting step for holding the front surface of the wafer on a chuck table of a cutting machine and forming a first groove having a depth that is about half of the thickness of the wafer, along the streets from the rear surface of the wafer; a second cutting step for holding the rear surface of the wafer on a chuck table and forming a second groove which does not reach the first groove, along the streets from the front surface of the wafer; and a dividing step for breaking an uncut portion between the first groove and the second groove by exerting external force along the streets of the wafer, on which the first grooves and the second grooves have been formed.

Abstract: A wafer, in which a plurality of rectangular regions are defined on the face of the wafer by streets arranged in a lattice pattern, and a semiconductor memory element is disposed in each of the rectangular regions, is divided along the streets to separate the rectangular regions individually, thereby forming a plurality of semiconductor devices. Before the wafer is divided along the streets, a strained layer having a thickness of 0.20 ?m or less, especially 0.05 to 0.20 ?m, is formed in the back of the wafer. The strained layer is formed by grinding the back of the semiconductor wafer by a grinding member formed by bonding diamond abrasive grains having a grain size of 4 ?m or less by a bonding material.

Abstract: A wafer, in which a plurality of rectangular regions are defined on the face of the wafer by streets arranged in a lattice pattern, and a semiconductor memory element is disposed in each of the rectangular regions, is divided along the streets to separate the rectangular regions individually, thereby forming a plurality of semiconductor devices. Before the wafer is divided along the streets, a strained layer having a thickness of 0.20 ?m or less, especially 0.05 to 0.20 ?m, is formed in the back of the wafer. The strained layer is formed by grinding the back of the semiconductor wafer by a grinding member formed by bonding diamond abrasive grains having a grain size of 4 ?m or less by a bonding material.

Abstract: A cassette for storing a plurality of semiconductor wafers with a space in the vertical direction has a plurality of support plates which are provided spaced apart from one another in the vertical direction. A receiving cut-out having a shape corresponding to the shape of an adsorber for suction-holding a semiconductor wafer are formed in the front half portion of each of the support plates. The cassette further comprises separation plates between adjacent support plates.

Abstract: A method of dividing a wafer having a plurality of areas, which are sectioned by the streets formed on the front surface in a lattice pattern and a plurality of devices, which are formed in the sectioned areas, along streets, the method comprising a first cutting step for holding the front surface of the wafer on a chuck table of a cutting machine and forming a first groove having a depth that is about half of the thickness of the wafer, along the streets from the rear surface of the wafer; a second cutting step for holding the rear surface of the wafer on a chuck table and forming a second groove which does not reach the first groove, along the streets from the front surface of the wafer; and a dividing step for breaking an uncut portion between the first groove and the second groove by exerting external force along the streets of the wafer, on which the first grooves and the second grooves have been formed.

Abstract: In manufacturing thinned semiconductor chips by grinding a semiconductor wafer supported on a rigid support substrate, in order to remove the semiconductor wafer or semiconductor chips from the support substrate without damage to the semiconductor wafer or semiconductor chips, a semiconductor wafer at its surface is bonded on a light-transmissive support substrate through an adhesive layer having an adhesion force that is reduced upon exposure to light radiation, thereby exposing the back surface of the semiconductor wafer. A tape is bonded to the backside of the semiconductor wafer integrated with the support substrate after grinding, wherein the tape is supported at the periphery. Before or after bonding of the tape, light radiation is applied to the adhesive layer at a side close to the support substrate to reduce the adhesion force in the adhesion layer.

Abstract: A wafer, in which a plurality of rectangular regions are defined on the face of the wafer by streets arranged in a lattice pattern, and a semiconductor memory element is disposed in each of the rectangular regions, is divided along the streets to separate the rectangular regions individually, thereby forming a plurality of semiconductor devices. Before the wafer is divided along the streets, a strained layer having a thickness of 0.20 ?m or less, especially 0.05 to 0.20 ?m, is formed in the back of the wafer. The strained layer is formed by grinding the back of the semiconductor wafer by a grinding member formed by bonding diamond abrasive grains having a grain size of 4 ?m or less by a bonding material.

Abstract: A wafer, in which a plurality of rectangular regions are defined on the face of the wafer by streets arranged in a lattice pattern, and a semiconductor memory element is disposed in each of the rectangular regions, is divided along the streets to separate the rectangular regions individually, thereby forming a plurality of semiconductor devices. Before the wafer is divided along the streets, a strained layer having a thickness of 0.20 ?m or less, especially 0.05 to 0.20 ?m, is formed in the back of the wafer. The strained layer is formed by grinding the back of the semiconductor wafer by a grinding member formed by bonding diamond abrasive grains having a grain size of 4 ?m or less by a bonding material.

Abstract: A semiconductor wafer protecting unit which enables a semiconductor wafer to be handled as required, without breakage of the semiconductor wafer, even when the back of the semiconductor wafer is ground to decrease the thickness of the semiconductor wafer markedly; and a semiconductor wafer processing method using such a semiconductor wafer protecting unit. The semiconductor wafer protecting unit is composed of a magnetized tape having one surface with tackiness, and a magnetic substrate having many pores formed at least in a central zone thereof.

Abstract: A wafer support plate comprises a support surface on which a semiconductor wafer is supported, and a crystal orientation mark which indicates the crystal orientation of the semiconductor wafer. Even the semiconductor wafer thinned by grinding can be stably held on the support surface, and the crystal orientation can be recognized even when the outer periphery of the semiconductor wafer has chipped.

Abstract: Prior to a grinding step, the front surface of a semiconductor wafer is stuck on a substrate to be mounted on the substrate. The transfer step of mounting the semiconductor wafer on a frame having a mounting opening in its center portion through a mounting tape and removing the substrate from the front surface of the semiconductor wafer is carried out between the grinding step and the subsequent treating step. The substrate is formed of a laminate consisting of a plurality of layers.

Abstract: A cassette for storing a plurality of semiconductor wafers with a space in the vertical direction has a plurality of support plates which are provided spaced apart from one another in the vertical direction. A receiving cut-out having a shape corresponding to the shape of an adsorber for suction-holding a semiconductor wafer are formed in the front half portion of each of the support plates. The cassette further comprises separation plates between adjacent support plates.

Abstract: A semiconductor wafer protecting unit which enables a semiconductor wafer to be handled as required, without breakage of the semiconductor wafer, even when the back of the semiconductor wafer is ground to decrease the thickness of the semiconductor wafer markedly; and a semiconductor wafer processing method using such a semiconductor wafer protecting unit. The semiconductor wafer protecting unit is composed of a magnetized tape having one surface with tackiness, and a magnetic substrate having many pores formed at least in a central zone thereof.

Abstract: In manufacturing thinned semiconductor chips by grinding a semiconductor wafer supported on a rigid support substrate, in order to remove semiconductor wafer or semiconductor chips from the support substrate without damage to the semiconductor wafer or semiconductor chips, a semiconductor wafer at its surface is bonded on a light-transmissive support substrate through an adhesive layer having an adhesion force to reduce upon exposed to light radiation, thereby exposing the back surface of the semiconductor wafer. A tape is bonded to the backside of the semiconductor wafer integrated with the support substrate of after grinding, wherein the tape is supported at the periphery. Before or after bonding of the tape, light radiation is applied to the adhesive layer at a side close to the support substrate to reduce the adhesion force in the adhesion layer.

Abstract: A wafer support plate comprises a support surface on which a semiconductor wafer is supported, and a crystal orientation mark which indicates the crystal orientation of the semiconductor wafer. Even the semiconductor wafer thinned by grinding can be stably held on the support surface, and the crystal orientation can be recognized even when the outer periphery of the semiconductor wafer has chipped.

Abstract: A method of processing a semiconductor wafer having a large number of rectangular areas sectioned by streets arranged in a lattice form on the front surface, circuits being formed in the respective areas. This method comprises the step of mounting a semiconductor wafer on a protective substrate in such a manner that the front surface of the semiconductor wafer is opposed to one side of the protective substrate having a large number of pores in at least its central area prior to the grinding of the back surface of the semiconductor wafer.

Abstract: Prior to a grinding step, the front surface of a semiconductor wafer is stuck on a substrate to be mounted on the substrate. The transfer step of mounting the semiconductor wafer on a frame having a mounting opening in its center portion through a mounting tape and removing the substrate from the front surface of the semiconductor wafer is carried out between the grinding step and the subsequent treating step. The substrate is formed of a laminate consisting of a plurality of layers.