Abstract: A substrate holding device is provided. The substrate holding device includes a substrate holder, a shaft attached to the substrate holder, a motor attached to the shaft, lifting pins, and a transmission assembly. The lifting pins are movable between a retracted position below a surface of the substrate holder, and a protruded position protruding from the surface. The transmission assembly is provided between the shaft and lifting pins and switches the substrate holding device between a transmittable state in which a driving force from the motor is transmitted to the lifting pins to move the lifting pins between the retracted position and the protruded position, and a non-transmittable state in which the driving force from the motor is not transmitted to the lifting pins but rotates the substrate holder.

Abstract: A substrate heating device is provided. The substrate heating device includes a vacuum chamber and a heater. The vacuum chamber receives a substrate. The heater includes a body, a heating wire, and a terminal part. The body penetrates through a wall of the vacuum chamber such that a portion of the body is in a vacuum atmosphere of the vacuum chamber. The heating wire is provided inside the body and partly disposed inside the vacuum chamber. The terminal part is connected to the heating wire and is disposed outside the vacuum chamber.

Abstract: Provided is a substrate holding device comprising: a holder that holds a substrate irradiated with an ion beam; and a driving device that rotates the holder around a predetermined axis to change an inclination of the held substrate with respect to the ion beam, wherein the driving device comprises: a power source that outputs power to rotate the holder; a reduction gear provided in the middle of a power transmission path from the power source to the holder; a first shaft member that rotates together with the holder by a power outputted from the reduction gear; a first detector that detects a rotational motion of the first shaft member; and a power control device that controls the power source based on a detection value of the first detector.

Abstract: A substrate cooling device is provided and includes a device body and a conduit block. The device body has a housing space, and a discharge portion for receiving and discharging a substrate into and out of the housing space. The conduit block includes an outlet port arranged in the device body across the housing space from the discharge portion, and a gas flow passage which is connected to the outlet port and receives a cooling gas. The conduit block outputs the cooling gas from the outlet port across the housing space in one direction such that the cooling gas flows across an upper surface of the substrate in the one direction and across a lower surface of the substrate in the one direction.

Abstract: A substrate accommodation device includes a casing, a gas supply that supplies a gas into the casing, and a transfer structure which retains substrates vertically spaced apart from each other and vertically transfers the substrates first-in-first-out from a carry-in position to a carry-out position within the casing. The gas heats or cools the substrates as the substrates are transferred first-in-first-out from the carry-in position to the carry-out position.

Abstract: A substrate heating device is provided. The substrate heating device includes a vacuum chamber and a heater. The vacuum chamber receives a substrate. The heater includes a body, a heating wire, and a terminal part. The body penetrates through a wall of the vacuum chamber such that a portion of the body is in a vacuum atmosphere of the vacuum chamber. The heating wire is provided inside the body and partly disposed inside the vacuum chamber. The terminal part is connected to the heating wire and is disposed outside the vacuum chamber.

Abstract: A substrate accommodation device includes a casing, a gas supply that supplies a gas into the casing, and a transfer structure which retains substrates vertically spaced apart from each other and vertically transfers the substrates first-in-first-out from a carry-in position to a carry-out position within the casing. The gas heats or cools the substrates as the substrates are transferred first-in-first-out from the carry-in position to the carry-out position.

Abstract: A device is provided. The device includes a body, a heat absorber, a test piece and a contact thermometer. The heat absorber is attached to the body. The test piece is attached to the body and spaced apart from the heat absorber. The test piece has an overlap region that is overlapped by the heat absorber such that the heat absorber absorbs heat radiated toward the device and a non-overlap region which does not overlap with the heat absorber and which is exposed to the heat radiated toward the device. The contact thermometer is coupled to the overlap region. The test piece has a thermal transmissivity approximately equal to that of a substrate, and the device positions the overlap region of the test piece adjacent to the substrate being radiated by the heat.

Abstract: A substrate holding device is provided. The substrate holding device includes a substrate holder, a shaft attached to the substrate holder, a motor attached to the shaft, lifting pins, and a transmission assembly. The lifting pins are movable between a retracted position below a surface of the substrate holder, and a protruded position protruding from the surface. The transmission assembly is provided between the shaft and lifting pins and switches the substrate holding device between a transmittable state in which a driving force from the motor is transmitted to the lifting pins to move the lifting pins between the retracted position and the protruded position, and a non-transmittable state in which the driving force from the motor is not transmitted to the lifting pins but rotates the substrate holder.

Abstract: A transport system is a vacuum processing system that includes a transport device that is provided in a vacuum, and a lubricating agent supply device that supplies lubricating agent to the transport device and provided in the ambient atmosphere. The transport device has a lubricating agent flow channel that is a channel for grease injected to a site subject to lubrication. The lubricating agent supply device has a grease server that stores a lubricating agent in the ambient atmosphere, a lubricating agent supply pipe which is a channel that guides the grease stored in the grease server to the lubricating agent flow channel and that connects the grease server and the lubricating agent flow channel, and an exhaust pump that exhausts the inside of the lubricating agent supply pipe.

Abstract: An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment.

Abstract: A transport system is a vacuum processing system that includes a transport device that is provided in a vacuum, and a lubricating agent supply device that supplies lubricating agent to the transport device and provided in the ambient atmosphere. The transport device has a lubricating agent flow channel that is a channel for grease injected to a site subject to lubrication. The lubricating agent supply device has a grease server that stores a lubricating agent in the ambient atmosphere, a lubricating agent supply pipe which is a channel that guides the grease stored in the grease server to the lubricating agent flow channel and that connects the grease server and the lubricating agent flow channel, and an exhaust pump that exhausts the inside of the lubricating agent supply pipe.

Abstract: An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment.

Abstract: An ion implanter includes an implantation chamber into which an ion beam is introduced, a holder for holding substrates on two columns of a first column and a second column in an X-direction, and a holder driving unit having a function of setting the holder in a horizontal state and then positioning the holder in a substrate exchange position and a function of setting the holder in a standing state and then driving reciprocally and linearly the holder along the X-direction in an irradiation area of the ion beam. Also, the ion implanter includes two load lock mechanisms, and two substrate carrying units equipped with arms, which carry the substrates between the load lock mechanisms and a substrate exchange position respectively, every two arms.

Abstract: An ion implanter includes an implantation chamber into which an ion beam is introduced, a holder for holding substrates on two columns of a first column and a second column in an X-direction, and a holder driving unit having a function of setting the holder in a horizontal state and then positioning the holder in a substrate exchange position and a function of setting the holder in a standing state and then driving reciprocally and linearly the holder along the X-direction in an irradiation area of the ion beam. Also, the ion implanter includes two load lock mechanisms, and two substrate carrying units equipped with arms, which carry the substrates between the load lock mechanisms and a substrate exchange position respectively, every two arms.

Abstract: A plasma generating device provided with a plasma generating chamber (10) and a high-frequency antenna (1) arranged in the chamber (10) for generating inductively coupled plasma by applying a high-frequency power to a gas in the chamber (10) from the antenna (1). The antenna (1) is a low-inductance antenna formed of a first portion (11) extending from the outside of the chamber (10) into the chamber (10), and a plurality of second portions (12) diverging from an inner end (11e) of the first portion (11) in an electrically parallel fashion, and having a termination (12e) directly connected to the inner wall of the grounded chamber (10). The surface of the antenna (1) is coated with an electrically insulating material. Frequency of the high-frequency power applied to the antenna may be in a range from 40 MHz to hundreds of megahertz.

Abstract: This vacuum processing apparatus has a fixed processing chamber 24 and two movable load lock chambers 28a and 28b. A gate valve 26 is provided on the processing chamber 24, and gate valves 30 are respectively provided on the load lock chambers 28a and 28b. Each of the load lock chambers 28a and 28b is moved in a Y direction by a preparatory chamber moving mechanism 34. A vacuum seal 54, which is expandable and shrinkable so as to vacuum seal a gap G between the gate valves 26 and 30 which are set close to each other during the expansion, is provided around a peripheral edge portion of the processing chamber gate valve 26. Further, a substrate transporting mechanism for transporting a substrate 2 between the processing chamber 24 and each of the load lock chambers 28a and 28b set close thereto.

Abstract: A plasma generating device provided with a plasma generating chamber (10) and a high-frequency antenna (1) arranged in the chamber (10) for generating inductively coupled plasma by applying a high-frequency power to a gas in the chamber (10) from the antenna (1). The antenna (1) is a low-inductance antenna formed of a first portion (11) extending from the outside of the chamber (10) into the chamber (10), and a plurality of second portions (12) diverging from an inner end (11e) of the first portion (11) in an electrically parallel fashion, and having a termination (12e) directly connected to the inner wall of the grounded chamber (10). The surface of the antenna (1) is coated with an electrically insulating material. Frequency of the high-frequency power applied to the antenna may be in a range from 40 MHz to hundreds of megahertz.

Abstract: A silicon film forming apparatus includes a deposition chamber (10), a silicon sputter target (2) arranged in the chamber, a hydrogen gas supply circuit (102 or 102?) supplying a hydrogen gas into the chamber, and a high-frequency power applying device (antenna 1, 1?, power source PW and others) generating inductively coupled plasma by applying high-frequency power to the gas supplied into the deposition chamber (10). Chemical sputtering is effected on the target (2) by the plasma to form a silicon film on a substrate S. A silane gas may be used. A silane gas supply circuit (101) may be provided with a gas reservoir unit (GR). The silicon film can be formed inexpensively and fast at a relatively low temperature.

Abstract: This vacuum processing apparatus has a fixed processing chamber 24 and two movable load lock chambers 28a and 28b. A gate valve 26 is provided on the processing chamber 24, and gate valves 30 are respectively provided on the load lock chambers 28a and 28b. Each of the load lock chambers 28a and 28b is moved in a Y direction by a preparatory chamber moving mechanism 34. A vacuum seal 54, which is expandable and shrinkable so as to vacuum seal a gap G between the gate valves 26 and 30 which are set close to each other during the expansion, is provided around a peripheral edge portion of the processing chamber gate valve 26. Further, a substrate transporting mechanism for transporting a substrate 2 between the processing chamber 24 and each of the load lock chambers 28a and 28b set close thereto.