Patents by Inventor Masatoshi Onoda

Masatoshi Onoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200413493
    Abstract: A substrate heating device is provided. The substrate heating device includes a vacuum chamber and a heater. The vacuum chamber receives a substrate. The heater includes a body, a heating wire, and a terminal part. The body penetrates through a wall of the vacuum chamber such that a portion of the body is in a vacuum atmosphere of the vacuum chamber. The heating wire is provided inside the body and partly disposed inside the vacuum chamber. The terminal part is connected to the heating wire and is disposed outside the vacuum chamber.
    Type: Application
    Filed: June 4, 2020
    Publication date: December 31, 2020
    Applicants: NISSIN ION EQUIPMENT CO., LTD., HIMEJI RIKA CO., LTD.
    Inventors: Masatoshi ONODA, Ryosuke GOTO, Kazuo SHIMIZU, Yasuhiro KISHIMOTO
  • Publication number: 20200286763
    Abstract: A substrate accommodation device includes a casing, a gas supply that supplies a gas into the casing, and a transfer structure which retains substrates vertically spaced apart from each other and vertically transfers the substrates first-in-first-out from a carry-in position to a carry-out position within the casing. The gas heats or cools the substrates as the substrates are transferred first-in-first-out from the carry-in position to the carry-out position.
    Type: Application
    Filed: February 28, 2020
    Publication date: September 10, 2020
    Applicant: NISSIN ION EQUIPMENT CO., LTD.
    Inventors: Koyu Ueno, Masatoshi Onoda
  • Publication number: 20200219739
    Abstract: A device is provided. The device includes a body, a heat absorber, a test piece and a contact thermometer. The heat absorber is attached to the body. The test piece is attached to the body and spaced apart from the heat absorber. The test piece has an overlap region that is overlapped by the heat absorber such that the heat absorber absorbs heat radiated toward the device and a non-overlap region which does not overlap with the heat absorber and which is exposed to the heat radiated toward the device. The contact thermometer is coupled to the overlap region. The test piece has a thermal transmissivity approximately equal to that of a substrate, and the device positions the overlap region of the test piece adjacent to the substrate being radiated by the heat.
    Type: Application
    Filed: December 20, 2019
    Publication date: July 9, 2020
    Applicant: NISSIN ION EQUIPMENT CO., LTD.
    Inventors: Ryosuke GOTO, Masatoshi ONODA
  • Publication number: 20200211891
    Abstract: A substrate holding device is provided. The substrate holding device includes a substrate holder, a shaft attached to the substrate holder, a motor attached to the shaft, lifting pins, and a transmission assembly. The lifting pins are movable between a retracted position below a surface of the substrate holder, and a protruded position protruding from the surface. The transmission assembly is provided between the shaft and lifting pins and switches the substrate holding device between a transmittable state in which a driving force from the motor is transmitted to the lifting pins to move the lifting pins between the retracted position and the protruded position, and a non-transmittable state in which the driving force from the motor is not transmitted to the lifting pins but rotates the substrate holder.
    Type: Application
    Filed: August 23, 2019
    Publication date: July 2, 2020
    Applicant: NISSIN ION EQUIPMENT CO., LTD.
    Inventors: Ippei NISHIMURA, Masatoshi Onoda
  • Patent number: 9784317
    Abstract: A transport system is a vacuum processing system that includes a transport device that is provided in a vacuum, and a lubricating agent supply device that supplies lubricating agent to the transport device and provided in the ambient atmosphere. The transport device has a lubricating agent flow channel that is a channel for grease injected to a site subject to lubrication. The lubricating agent supply device has a grease server that stores a lubricating agent in the ambient atmosphere, a lubricating agent supply pipe which is a channel that guides the grease stored in the grease server to the lubricating agent flow channel and that connects the grease server and the lubricating agent flow channel, and an exhaust pump that exhausts the inside of the lubricating agent supply pipe.
    Type: Grant
    Filed: January 28, 2015
    Date of Patent: October 10, 2017
    Assignee: NISSIN ION EQUIPMENT CO., LTD.
    Inventor: Masatoshi Onoda
  • Patent number: 9230776
    Abstract: An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment.
    Type: Grant
    Filed: January 14, 2015
    Date of Patent: January 5, 2016
    Assignee: NISSIN ION EQUIPMENT CO., LTD.
    Inventors: Takeshi Matsumoto, Koichi Orihira, Masatoshi Onoda
  • Publication number: 20150308505
    Abstract: A transport system is a vacuum processing system that includes a transport device that is provided in a vacuum, and a lubricating agent supply device that supplies lubricating agent to the transport device and provided in the ambient atmosphere. The transport device has a lubricating agent flow channel that is a channel for grease injected to a site subject to lubrication. The lubricating agent supply device has a grease server that stores a lubricating agent in the ambient atmosphere, a lubricating agent supply pipe which is a channel that guides the grease stored in the grease server to the lubricating agent flow channel and that connects the grease server and the lubricating agent flow channel, and an exhaust pump that exhausts the inside of the lubricating agent supply pipe.
    Type: Application
    Filed: January 28, 2015
    Publication date: October 29, 2015
    Inventor: Masatoshi ONODA
  • Publication number: 20150262790
    Abstract: An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment.
    Type: Application
    Filed: January 14, 2015
    Publication date: September 17, 2015
    Applicant: NISSIN ION EQUIPMENT CO., LTD.
    Inventors: Takeshi MATSUMOTO, Koichi ORIHIRA, Masatoshi ONODA
  • Patent number: 8143595
    Abstract: An ion implanter includes an implantation chamber into which an ion beam is introduced, a holder for holding substrates on two columns of a first column and a second column in an X-direction, and a holder driving unit having a function of setting the holder in a horizontal state and then positioning the holder in a substrate exchange position and a function of setting the holder in a standing state and then driving reciprocally and linearly the holder along the X-direction in an irradiation area of the ion beam. Also, the ion implanter includes two load lock mechanisms, and two substrate carrying units equipped with arms, which carry the substrates between the load lock mechanisms and a substrate exchange position respectively, every two arms.
    Type: Grant
    Filed: August 25, 2009
    Date of Patent: March 27, 2012
    Assignee: Nissin Ion Equipment Co., Ltd.
    Inventors: Junichi Tatemichi, Masatoshi Onoda, Kohichi Orihira
  • Publication number: 20100314552
    Abstract: An ion implanter includes an implantation chamber into which an ion beam is introduced, a holder for holding substrates on two columns of a first column and a second column in an X-direction, and a holder driving unit having a function of setting the holder in a horizontal state and then positioning the holder in a substrate exchange position and a function of setting the holder in a standing state and then driving reciprocally and linearly the holder along the X-direction in an irradiation area of the ion beam. Also, the ion implanter includes two load lock mechanisms, and two substrate carrying units equipped with arms, which carry the substrates between the load lock mechanisms and a substrate exchange position respectively, every two arms.
    Type: Application
    Filed: August 25, 2009
    Publication date: December 16, 2010
    Applicant: NISSIN ION EQUIPMENT CO., LTD.
    Inventors: Junichi Tatemichi, Masatoshi Onoda, Kohichi Orihira
  • Patent number: 7849814
    Abstract: A plasma generating device provided with a plasma generating chamber (10) and a high-frequency antenna (1) arranged in the chamber (10) for generating inductively coupled plasma by applying a high-frequency power to a gas in the chamber (10) from the antenna (1). The antenna (1) is a low-inductance antenna formed of a first portion (11) extending from the outside of the chamber (10) into the chamber (10), and a plurality of second portions (12) diverging from an inner end (11e) of the first portion (11) in an electrically parallel fashion, and having a termination (12e) directly connected to the inner wall of the grounded chamber (10). The surface of the antenna (1) is coated with an electrically insulating material. Frequency of the high-frequency power applied to the antenna may be in a range from 40 MHz to hundreds of megahertz.
    Type: Grant
    Filed: September 12, 2006
    Date of Patent: December 14, 2010
    Assignee: Nissin Electric Co., Ltd.
    Inventors: Masatoshi Onoda, Eiji Takahashi
  • Patent number: 7367139
    Abstract: This vacuum processing apparatus has a fixed processing chamber 24 and two movable load lock chambers 28a and 28b. A gate valve 26 is provided on the processing chamber 24, and gate valves 30 are respectively provided on the load lock chambers 28a and 28b. Each of the load lock chambers 28a and 28b is moved in a Y direction by a preparatory chamber moving mechanism 34. A vacuum seal 54, which is expandable and shrinkable so as to vacuum seal a gap G between the gate valves 26 and 30 which are set close to each other during the expansion, is provided around a peripheral edge portion of the processing chamber gate valve 26. Further, a substrate transporting mechanism for transporting a substrate 2 between the processing chamber 24 and each of the load lock chambers 28a and 28b set close thereto.
    Type: Grant
    Filed: June 19, 2006
    Date of Patent: May 6, 2008
    Assignee: Nissin Ion Equipment Co., Ltd.
    Inventors: Yasunori Ando, Masatoshi Onoda
  • Publication number: 20070266947
    Abstract: A plasma generating device provided with a plasma generating chamber (10) and a high-frequency antenna (1) arranged in the chamber (10) for generating inductively coupled plasma by applying a high-frequency power to a gas in the chamber (10) from the antenna (1). The antenna (1) is a low-inductance antenna formed of a first portion (11) extending from the outside of the chamber (10) into the chamber (10), and a plurality of second portions (12) diverging from an inner end (11e) of the first portion (11) in an electrically parallel fashion, and having a termination (12e) directly connected to the inner wall of the grounded chamber (10). The surface of the antenna (1) is coated with an electrically insulating material. Frequency of the high-frequency power applied to the antenna may be in a range from 40 MHz to hundreds of megahertz.
    Type: Application
    Filed: September 12, 2006
    Publication date: November 22, 2007
    Inventors: Masatoshi Onoda, Eiji Takahashi
  • Publication number: 20070007128
    Abstract: A silicon film forming apparatus includes a deposition chamber (10), a silicon sputter target (2) arranged in the chamber, a hydrogen gas supply circuit (102 or 102?) supplying a hydrogen gas into the chamber, and a high-frequency power applying device (antenna 1, 1?, power source PW and others) generating inductively coupled plasma by applying high-frequency power to the gas supplied into the deposition chamber (10). Chemical sputtering is effected on the target (2) by the plasma to form a silicon film on a substrate S. A silane gas may be used. A silane gas supply circuit (101) may be provided with a gas reservoir unit (GR). The silicon film can be formed inexpensively and fast at a relatively low temperature.
    Type: Application
    Filed: September 12, 2006
    Publication date: January 11, 2007
    Inventors: Atsushi Tomyo, Eiji Takahashi, Masaki Fujiwara, Takashi Kotera, Masatoshi Onoda
  • Publication number: 20060283041
    Abstract: This vacuum processing apparatus has a fixed processing chamber 24 and two movable load lock chambers 28a and 28b. A gate valve 26 is provided on the processing chamber 24, and gate valves 30 are respectively provided on the load lock chambers 28a and 28b. Each of the load lock chambers 28a and 28b is moved in a Y direction by a preparatory chamber moving mechanism 34. A vacuum seal 54, which is expandable and shrinkable so as to vacuum seal a gap G between the gate valves 26 and 30 which are set close to each other during the expansion, is provided around a peripheral edge portion of the processing chamber gate valve 26. Further, a substrate transporting mechanism for transporting a substrate 2 between the processing chamber 24 and each of the load lock chambers 28a and 28b set close thereto.
    Type: Application
    Filed: June 19, 2006
    Publication date: December 21, 2006
    Inventors: Yasunori Ando, Masatoshi Onoda
  • Publication number: 20040076763
    Abstract: An apparatus for forming a thin film on an article, wherein a film-forming gas is supplied from a gas supplying device to a vacuum container which can be evacuated by an exhausting device to reduce gas pressure in the container, an electric power is applied from a power applying device to the film-forming gas to produce plasma from the gas in which the thin film is formed on the article disposed in the vacuum container. The gas supplying device includes a gas supply member having a gas supply surface portion opposed to a film-forming surface of the article in the vacuum container. The gas supply member has a plurality of gas supply holes dispersedly formed at the gas supply surface portion. The power applying device includes a power applying electrode in the vacuum container, the electrode being disposed as surface portion opposed to the article.
    Type: Application
    Filed: September 17, 2003
    Publication date: April 22, 2004
    Inventors: Hiroya Kirimura, Kiyoshi Kubota, Masatoshi Onoda, Naoto Kuratani
  • Patent number: 6092485
    Abstract: A substrate processing apparatus includes a processing chamber and a vacuum spare chamber adjacent thereto through a vacuum valve. The processing chamber houses two holders for holding substrates on their surfaces on the same side. The processing chamber is provided with an ion source for irradiating the substrate on each holder having reached a processing position P with an ion beam so that it is subjected to ion implantation. The processing chamber is internally provided with a holder moving mechanism for performing the operation of moving the two holders in parallel independently from each other so that they traverse the processing position P, and moving the two holders in parallel simultaneously between the insides of the processing chamber and vacuum spare chamber through the vacuum valve.
    Type: Grant
    Filed: October 28, 1997
    Date of Patent: July 25, 2000
    Assignee: Nissin Electric Co., Ltd.
    Inventors: Yasunori Ando, Masatoshi Onoda