Patents by Inventor Masatoshi Seki

Masatoshi Seki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6487275
    Abstract: An X-ray tube which is high in brightness and high in resolution, and can withstand continuous long-time use, that is, it can withstand a high heat load. An X-ray target and an X-ray tube having the X-ray target include an X-ray generating metal layer having an average crystal grain diameter not larger than 30 &mgr;m on the surface of a base plate in the X-ray irradiated side. The X-ray tube has a small focus point and can withstand a high input load. A CT apparatus using the X-ray tube can provide a high resolution and a high definition image.
    Type: Grant
    Filed: February 12, 1998
    Date of Patent: November 26, 2002
    Assignees: Hitachi, Ltd., Hitachi Medical Corporation
    Inventors: Noboru Baba, Masao Shimizu, Motomichi Doi, Yuzo Kozono, Kunihiro Maeda, Masatoshi Seki
  • Patent number: 6267118
    Abstract: A wig fitting implement which performs the fitting of a wig to a head surely and stably, can be put on and taken off easily, has no bad influence on the head like eczema and a rash, and has excellent workability is provided. A method of use of the wig fitting implement is also provided. The wig fitting implement 1 comprises a net-like base 2 divided into four regions. These regions correspond to a left side front surface (B side), a left side rear surface (D side), a right side front surface (A side) and a right side rear surface (C side). Double-sided tapes 3 (A1, B1, C1 and D1) and protective tapes 4 (A2, B2, C2 and D2) are adhered to each region. B1 of the B side is adhered to a surrounding rim part 13 of a flexible planar component 9 of a wig 7, and a natural hair 12 of a head skin 10 passes through penetration holes 6 and is held between C1 and B1 to fix the natural hair.
    Type: Grant
    Filed: November 23, 1999
    Date of Patent: July 31, 2001
    Assignee: Aderans Co., Ltd.
    Inventors: Masataka Ito, Masahiro Makino, Masatoshi Seki
  • Patent number: 6217275
    Abstract: A pickup apparatus which can easily pick up and pull out a thin plate member from a number of thin plate members disposed alongside one another in a narrowly spaced relationship and which assists in automating the picking up and pulling out of the thin plate member. The pickup apparatus includes a pair of pincer members which pick up and pull out the thin plate member from a number of the thin plate members disposed in a side-by-side spaced arrangement in a tray by expanding or contracting a bag member interposed between the pincer members to open or close the pincer members.
    Type: Grant
    Filed: November 6, 1998
    Date of Patent: April 17, 2001
    Assignee: Rohm Co., Ltd.
    Inventor: Masatoshi Seki
  • Patent number: 5571327
    Abstract: A continuous hot dipping apparatus which comprises a slide bearing structure of a bearing and a roll shaft which is of a combination of a ceramic material and a solid lubricant material, and which has good wear resistance and long term durability. A heat resistant steel is provided, which is used in a molten metal of hot dipping and which essentially consists of 0.15-0.30% C, not more than 20% Si, not more than 2% Mn, 20-30% Cr, 10-20% Ni and not less than 50% Fe.
    Type: Grant
    Filed: February 12, 1993
    Date of Patent: November 5, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Takahiko Ookouchi, Tamihito Kawahigashi, Masatoshi Seki, Junji Sakai, Hitoshi Okoshi, Yoshitaka Nakayama
  • Patent number: 4265685
    Abstract: The present invention deals with a method of taking out a substrate electrode of a LOCOS-type silicon gate MOSIC device from the surface of the semiconductor substrate. According to the present invention, a masking layer for preventing the introduction of impurities is formed on the periphery of the semiconductor substrate simultaneously with the masking step for forming a resistor of polycrystalline silicon, the mask is removed after the impurities have been introduced, and a substrate electrode is formed on the exposed surface of the semiconductor substrate.
    Type: Grant
    Filed: November 28, 1979
    Date of Patent: May 5, 1981
    Assignee: Hitachi, Ltd.
    Inventor: Masatoshi Seki
  • Patent number: 4129678
    Abstract: In a self-bondable insulated wire comprising a conductor and three resin insulating layers, the first resin insulating layer is formed with a resin selected from the group consisting of polyimide resins, polyamideimide resins and polyesterimide resins, the intermediate resin insulating layer is formed with a resin selected from the group consisting of polyvinyl formal resins and epoxy resins, and the outermost resin insulating layer is formed with a self-bondable resin of phenoxy series. Thus, a self-bondable insulated wire which is excellent in both oil resistance and heat resistance is obtained.
    Type: Grant
    Filed: May 26, 1977
    Date of Patent: December 12, 1978
    Assignees: Hitachi, Ltd., Hitachi Cable, Ltd.
    Inventors: Masatoshi Seki, Moriichi Sato, Hideo Tsukioka, Etuo Ohe, Masatsugu Ogata, Akio Mitsuoka