Abstract: The semiconductor device comprises a silicon substrate 10 having a device region 11, a transistor including a gate electrode 20 formed in the device region 11 with the gate insulation film 14 formed therebetween, and a dummy metal layer 52 formed over the gate electrode 20 with an inter-layer insulation film 32 formed therebetween, formed of a metal material having the property of occluding hydrogen and having a peripheral part positioned outer of a region where the region for the gate electrode 20 formed in and the device region 11 overlap each other.

Abstract: The semiconductor device comprises a silicon substrate 10 having a device region 11, a transistor including a gate electrode 20 formed in the device region 11 with the gate insulation film 14 formed therebetween, and a dummy metal layer 52 formed over the gate electrode 20 with an inter-layer insulation film 32 formed therebetween, formed of a metal material having the property of occluding hydrogen and having a peripheral part positioned outer of a region where the region for the gate electrode 20 formed in and the device region 11 overlap each other.

Abstract: The semiconductor device comprises a silicon substrate 10 having a device region 11, a transistor including a gate electrode 20 formed in the device region 11 with the gate insulation film 14 formed therebetween, and a dummy metal layer 52 formed over the gate electrode 20 with an inter-layer insulation film 32 formed therebetween, formed of a metal material having the property of occluding hydrogen and having a peripheral part positioned outer of a region where the region for the gate electrode 20 formed in and the device region 11 overlap each other.

Abstract: The semiconductor device comprises a silicon substrate 10 having a device region 11, a transistor including a gate electrode 20 formed in the device region 11 with the gate insulation film 14 formed therebetween, and a dummy metal layer 52 formed over the gate electrode 20 with an inter-layer insulation film 32 formed therebetween, formed of a metal material having the property of occluding hydrogen and having a peripheral part positioned outer of a region where the region for the gate electrode 20 formed in and the device region 11 overlap each other.

Abstract: To solve the problem that when a high temperature heat treatment is avoided, a substrate leak current increases due to the interfacial level generated with a plasma damage and thereby clearness of the CMOS image sensor is deteriorated. There is provided a CMOS image sensor characterized in using an epitaxial wafer as an element substrate, and more particularly to a CMOS image sensor characterized in that a tungsten layer is formed after formation of a contact hole used for connection between the elements in the element substrate and wirings and after the tungsten layer is removed from the area other than the contact hole, the annealing is conducted under the nitrogen and hydrogen atmosphere or under the hydrogen atmosphere.