Abstract: A method of producing a resist film includes: a laminating step of fabricating a workpiece by laminating the resist film on an etching target film; and an infiltration step of exposing the workpiece to a gas of a precursor containing a metal having a higher EUV light absorption rate than carbon to infiltrate the metal into the resist film.

Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

Abstract: There is provided a SiC film forming method for forming a SiC film on a workpiece, including: a first step of forming a carbon film on the workpiece; and a second step of exposing the carbon film to a silicon-containing gas and causing silicon to be combined into the carbon film.

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract: Disclosed is a semiconductor device manufacturing method that manufactures a semiconductor device having a resist pattern which is excellent in roughness property and line width property. The method includes forming a film which is elastic and incompatible with a resist patterned on an object to be processed to cover the surface of the resist, and heating the object to be processed formed with the film.

Abstract: The present invention provides condensed quinoline compounds represented by the following general formula (I): ##STR1## in which Z is NH, X is hydrogen, L is lower alkoxy, M is NHQ, Q is --SO.sub.2 CH.sub.3, Y is --NHR, and R is: ##STR2## These compounds are effective for inhibiting KB-cell growth and prolongation of the life span of mice implanted with tumor P-388.

Abstract: Novel indoloquinoline compounds of formula (I), benzo(b)acridines of formula (II) and benzo(c)acridines of formula (III) have carcinostatic activities. The compounds, processes for preparing the compounds via nucleophilic aromatic substitution, and carcinostatic compositions containing the same are disclosed.

Abstract: Disclosed is a novel arylalkylamine derivative represented by the formula (I) ##STR1## wherein X represents --O--, --CH.sub.2 -- or --NR.sup.3 -- in which R.sup.3 represents hydrogen or lower alkyl;Y represents --NH-- or ##STR2## Z represents ##STR3## in which R.sup.4 represents hydrogen or lower alkyl or ##STR4## Q represents an optionally substituted aryl or optionally substituted aromatic heterocyclic group; each of R.sup.1 and R.sup.2 independently represents hydrogen or lower alkyl;each of m and n independently represents an integer of 0 or 1; anda pharmaceutically acceptable salt thereof. The compound (I) and a pharmaceutically acceptable salt thereof show bronchodilatory and antiallergic activities, and are useful for treating respiratory disorders such as bronchial asthma.

Abstract: The present invention provides a quinoline base compound represented by the following general formula (1) of: ##STR1## wherein X is CH.sub.2, O or S. Further provided are the process for the preparation of the aforementioned quinoline base compound and an anticancer agent including the same as a pharmacologically efficacious component.

Abstract: New tropolone derivatives of the general formula: ##STR1## wherein R.sup.1 represents H or an alkyl group, R.sup.2 represents an alkyl, aryl, aralkyl or heterocyclic group and R.sup.3 represents an alkoxyl, aryl or heterocyclic group or a group of the formula: ##STR2## or R.sup.2 and R.sup.3 may form together a part of a heterocyclic group, their metal complex salts, processes for the preparation thereof and the use thereof as anti-tumor agents.

Abstract: Provided herein is a butanediol of the formula: ##STR1## wherein R is an alkyl group containing 5-21 carbon atoms or an alkenyl group containing 5-21 carbon atoms and which contains 1-2 unsaturated bonds. The present invention also contemplates a method of preparing such compounds and the use of such compounds as an anti-tumor agent for treating tumors.