Patents by Inventor Masatoshi Yasumatsu

Masatoshi Yasumatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid-state imaging device and method for manufacturing the same
    Patent number: 7692720
    Abstract: A solid-state imaging device, comprises: a semiconductor substrate having a first surface; a solid-state imaging element in the first surface of the semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal connected to the solid-state imaging element, wherein a distance between the outer surface of the light-receiving region and the third surface of the light-transmission member is 0.5 mm or more.
    Type: Grant
    Filed: August 2, 2004
    Date of Patent: April 6, 2010
    Assignee: FUJIFILM Corporation
    Inventors: Kazuhiro Nishida, Hiroshi Maeda, Yoshihisa Negishi, Shunichi Hosaka, Masatoshi Yasumatsu, Eiji Watanabe
  • Solid-state imaging device and method for manufacturing the same
    Patent number: 7688382
    Abstract: A solid-state imaging device, comprises: a semiconductor substrate having a first surface; a solid-state imaging element in the first surface of semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal connected to the solid-state imaging element, wherein the light-transmission member comprises low ?-ray glass.
    Type: Grant
    Filed: July 22, 2004
    Date of Patent: March 30, 2010
    Assignee: FUJIFILM Corporation
    Inventors: Kazuhiro Nishida, Hiroshi Maeda, Yoshihisa Negishi, Shunichi Hosaka, Eiji Watanabe, Masatoshi Yasumatsu
  • Solid-state imaging device and method for manufacturing the same
    Publication number: 20050062871
    Abstract: A solid-state imaging device, comprises: a semiconductor substrate having a first surface; a solid-state imaging element in the first surface of the semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal connected to the solid-state imaging element, wherein a distance between the outer surface of the light-receiving region and the third surface of the light-transmission member is 0.5 mm or more.
    Type: Application
    Filed: August 2, 2004
    Publication date: March 24, 2005
    Inventors: Kazuhiro Nishida, Hiroshi Maeda, Yoshihisa Negishi, Shunichi Hosaka, Masatoshi Yasumatsu, Eiji Watanabe
  • Solid-state imaging device and method for manufacturing the same
    Publication number: 20050024519
    Abstract: A solid-state imaging device, comprises: a semiconductor substrate having a first surface; a solid-state imaging element in the first surface of semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal connected to the solid-state imaging element, wherein the light-transmission member comprises low ?-ray glass.
    Type: Application
    Filed: July 22, 2004
    Publication date: February 3, 2005
    Inventors: Kazuhiro Nishida, Hiroshi Maeda, Yoshihisa Negishi, Shunichi Hosaka, Eiji Watanabe, Masatoshi Yasumatsu