Patents by Inventor Masatoshi Yokoyama
Masatoshi Yokoyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240117600Abstract: An excavator includes: a swing motor driven by oil from a swing pump coupled to a power take-off and driven by an engine; a first main oil passage connecting a first discharge port of the swing pump and a first suction port of the swing motor; a second main oil passage connecting a second discharge port of the swing pump and a second suction port of the swing motor; a neutral retention valve disposed in the first main oil passage and the second main oil passage and controlling passage of oil; a regenerative energy absorbing device coupled to the power take-off and absorbs regenerative energy generated by oil from the swing motor to the swing pump via a meter-out opening of the neutral retention valve; and a valve control section controlling an area of the meter-out opening based on a state of the regenerative energy absorbing device.Type: ApplicationFiled: February 28, 2022Publication date: April 11, 2024Applicant: Komatsu Ltd.Inventors: Wataru Sumino, Shinobu Nagura, Yuuki Yokoyama, Masatoshi Ikeda
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Patent number: 11841595Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: December 21, 2022Date of Patent: December 12, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Publication number: 20230129465Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: ApplicationFiled: December 21, 2022Publication date: April 27, 2023Inventors: Masatoshi YOKOYAMA, Shigeki KOMORI, Manabu SATO, Kenichi OKAZAKI, Shunpei YAMAZAKI
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Patent number: 11543718Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: January 21, 2022Date of Patent: January 3, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Patent number: 11327376Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: July 2, 2021Date of Patent: May 10, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Publication number: 20220137469Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: ApplicationFiled: January 21, 2022Publication date: May 5, 2022Inventors: Masatoshi YOKOYAMA, Shigeki KOMORI, Manabu SATO, Kenichi OKAZAKI, Shunpei YAMAZAKI
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Publication number: 20220123150Abstract: It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×1019 atoms/cm3 or lower and the source electrode and the drain electrode include one or more of tungsten, platinum, and molybdenum.Type: ApplicationFiled: January 3, 2022Publication date: April 21, 2022Inventors: Shunpei YAMAZAKI, Masahiro TAKAHASHI, Takuya HIROHASHI, Katsuaki TOCHIBAYASHI, Yasutaka NAKAZAWA, Masatoshi YOKOYAMA
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Publication number: 20210333668Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: ApplicationFiled: July 2, 2021Publication date: October 28, 2021Inventors: Masatoshi YOKOYAMA, Shigeki KOMORI, Manabu SATO, Kenichi OKAZAKI, Shunpei YAMAZAKI
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Patent number: 11137651Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: October 28, 2020Date of Patent: October 5, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Publication number: 20210072605Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: ApplicationFiled: October 28, 2020Publication date: March 11, 2021Inventors: Masatoshi YOKOYAMA, Shigeki KOMORI, Manabu SATO, Kenichi OKAZAKI, Shunpei YAMAZAKI
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Patent number: 10877338Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: May 4, 2020Date of Patent: December 29, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Patent number: 10861980Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.Type: GrantFiled: August 23, 2018Date of Patent: December 8, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masahiro Katayama, Yasutaka Nakazawa, Masatoshi Yokoyama, Masahiko Hayakawa, Kenichi Okazaki, Shunsuke Koshioka
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Patent number: 10852576Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: September 26, 2019Date of Patent: December 1, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Publication number: 20200264471Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: ApplicationFiled: May 4, 2020Publication date: August 20, 2020Inventors: Masatoshi YOKOYAMA, Shigeki KOMORI, Manabu SATO, Kenichi OKAZAKI, Shunpei YAMAZAKI
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Publication number: 20200026118Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: ApplicationFiled: September 26, 2019Publication date: January 23, 2020Inventors: Masatoshi YOKOYAMA, Shigeki KOMORI, Manabu SATO, Kenichi OKAZAKI, Shunpei YAMAZAKI
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Patent number: 10437091Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: July 3, 2018Date of Patent: October 8, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Publication number: 20180374957Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.Type: ApplicationFiled: August 23, 2018Publication date: December 27, 2018Inventors: Masahiro KATAYAMA, Yasutaka NAKAZAWA, Masatoshi YOKOYAMA, Masahiko HAYAKAWA, Kenichi OKAZAKI, Shunsuke KOSHIOKA
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Publication number: 20180329244Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: ApplicationFiled: July 3, 2018Publication date: November 15, 2018Inventors: Masatoshi YOKOYAMA, Shigeki KOMORI, Manabu SATO, Kenichi OKAZAKI, Shunpei YAMAZAKI
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Patent number: 10018887Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.Type: GrantFiled: May 3, 2016Date of Patent: July 10, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
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Patent number: 9741866Abstract: To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5×1018 atoms/cm3 at the interface between the first gate insulating film and the second gate insulating film or the interface between the gate electrode layer and a gate insulating film.Type: GrantFiled: December 30, 2014Date of Patent: August 22, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takayuki Cho, Shunsuke Koshioka, Masatoshi Yokoyama, Shunpei Yamazaki