Abstract: A magnetic memory device includes first to third conductors and a 3-terminal type memory cell coupled to the first to third conductors. The memory cell includes: a fourth conductor and a magnetoresistance effect element provided between the fourth and third conductors. The magnetoresistance effect element includes: a first ferromagnet in contact with the fourth conductor; a second ferromagnet provided in an opposite side of the fourth conductor with respect to the first ferromagnet; a dielectric between the first and second ferromagnets; a third ferromagnet provided in an opposite side of the first ferromagnet with respect to the second ferromagnet; and a nonmagnet provided between the second and third ferromagnets. A concentration of a noble metal contained in the first ferromagnet is higher than a concentration of the noble metal contained in the second ferromagnet.

Abstract: A reactor includes a coil having a winding portion; a magnetic core including an inner core portion and an outer core portion disposed outside the winding portion; a resin cover housing at least a portion of the magnetic core; and an adhesive portion filling a gap between an outer circumferential surface of a housing portion of the magnetic core and an inner circumferential surface of the resin cover bonding the housing portion with the resin cover. The resin cover includes: a flange portion having a surface that comes into contact with an end face of the winding portion and a through hole; an outer cover portion having housing portion housing the outer core portion and an abutting portion that contacts a portion of the flange portion; and a protruding portion that forms the gap between an outer circumferential surface of the outer core portion.

Abstract: A magnetic memory includes first conductive lines, a second conductive line, a third conductive line, a fourth conductive line, a conductive layer, magnetoresistive elements, first transistors, a second transistor, and a third transistor. Each magnetoresistive element is arranged between the conductive layer and the second conductive line and includes a first magnetic layer, a second magnetic layer between the first magnetic layer and the second conductive line, and a first non-magnetic layer between the first magnetic layer and the second magnetic layer. Each first transistor is connected between the conductive layer and one of the magnetoresistive elements, and has a gate which is a part of one the first conductive lines. A second transistor is connected between a first end of the second conductive line and the third conductive line. A third transistor is connected between a second end of the second conductive line and the fourth conductive line.

Abstract: A superconducting coil device according to one embodiment of the present invention includes: A superconducting coil device including: a bobbin having a tubular body; superconducting wires, a part of which constitutes a wound portion where the superconducting wires are wound on the bobbin; a bobbin-side guide portion holding the superconducting wires extending from the bobbin, the bobbin-side guide portion being provided to extend in a bobbin axial direction, which is an axial direction of the body of the bobbin; a first guide portion holding the superconducting wires extending from the bobbin-side guide portion, the first guide portion being arranged on an outer side of the bobbin-side guide portion in a direction intersecting the bobbin axial direction and provided to extend in the direction intersecting the bobbin axial direction; and a second guide portion capable of holding the superconducting wires extending from the first guide portion, the second guide portion being provided to extend in a direction in

Abstract: A semiconductor device according to an embodiment includes first to fifth interconnects, first to third memory cells, and a control circuit. The control circuit is configured to execute machine learning. Each of the first memory cells, the second memory cells, and the third memory cells includes a resistance changing element. In the machine learning, the control circuit is configured to: execute a write operation using a common write voltage to each of the second memory cells; and after the write operation, input input data to each of the first interconnects, and change a resistance value of at least one third memory cell of the third memory cells based on the input data and a signal output from each of the fifth interconnects based on the input data.

Abstract: A magnetic memory device includes first, second, and third conductor layers, and a memory cell that is coupled to the first, second, and third conductor layers. The memory cell includes a fourth conductor layer and a magnetoresistance effect element. The fourth conductor layer includes first, second, and third portions coupled to the first, second, and third conductor layers, respectively. The third portion is between the first and second portions. The magnetoresistance effect element is coupled between a third conductor and the fourth conductor layer. The fourth conductor layer includes a magnetic layer and a non-magnetic layer that is between the magnetic layer and the magnetoresistance effect element. The magnetic layer has a first saturation magnetization during a standby state or a read state of the memory cell, and has a second saturation magnetization larger than the first saturation magnetization during a write state of the memory cell.

Abstract: A magnetic memory device includes a three-terminal type memory cell. A first terminal is connected to a first conductor layer. A second terminal is connected to a second conductor layer. A third terminal is connected to a third conductor layer. The memory cell includes a fourth conductor connected to the first conductor layer, the second conductor layer, and the third conductor layer. A magnetoresistance effect element of the memory cell is coupled between the third conductor layer and the fourth conductor layer. A first switching element is coupled to the second conductor layer and the fourth conductor layer. A second switching element coupled to the first conductor layer and the third conductor layer. The fourth conductor layer includes a first ferromagnetic layer and a first non-magnetic layer. The first non-magnetic layer comprises at least one of ruthenium, iridium, rhodium, or osmium.

Abstract: According to one embodiment, a magnetic memory device includes first to third conductor layers, and a three-terminal-type memory cell connected to the first to third conductor layers. The first memory cell includes a fourth conductor layer, a magnetoresistance effect element, a two-terminal-type first switching element, and a two-terminal-type second switching element. The fourth conductor layer includes a first portion connected to the first conductor layer, a second portion connected to the second conductor layer, and a third portion which is connected to the third conductor layer. The magnetoresistance effect element is connected between the third conductor layer and the fourth conductor layer. The first switching element is connected between the second conductor layer and the fourth conductor layer. The second switching element is connected between the first conductor layer and the third conductor layer.

Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0<x<1, 0<y<1, 0<z<1, and x+y+z=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic ratio x of the element C1 satisfies x?(3?(3+b)×y?z)/(3+a).

Abstract: According to one embodiment, a selector device includes a first electrode, a second electrode, and a selector layer disposed between the first electrode and the second electrode. At least one of the first electrode or the second electrode includes a stacked film. The stacked film includes a first layer including a first material with a first Debye temperature, and a second layer in contact with the first layer and including a second material with a second Debye temperature lower than the first Debye temperature. A ratio of the first Debye temperature to the second Debye temperature is equal to or greater than 5.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer between the first sub-magnetic layer and the second sub-magnetic layer, and the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a magnetization amount smaller than that of the second sub-magnetic layer.

Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0<x<1, 0<y<1, 0<z<1, and x+y+z=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic ratio x of the element C2 satisfies x?(3?(3+b)×y?z)/(3+a).

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer in a polycrystalline state and a second sub-magnetic layer in an amorphous state.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect and a magnetoresistive effect element. The first interconnect includes a first nonmagnet including a light metal and a second nonmagnet including a heavy metal on the first nonmagnet. The magnetoresistive effect element includes a third nonmagnet on the second nonmagnet, a first ferromagnet on the third nonmagnet, a second ferromagnet, and a fourth nonmagnet between the first ferromagnet and the second ferromagnet. The third nonmagnet has a film thickness of 2 nanometers or less.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer between the first sub-magnetic layer and the second sub-magnetic layer, and the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a magnetization amount smaller than that of the second sub-magnetic layer.

Abstract: According to one embodiment, a magnetic memory device includes a first interconnect and a magnetoresistive effect element. The first interconnect includes a first nonmagnet including a light metal and a second nonmagnet including a heavy metal on the first nonmagnet. The magnetoresistive effect element includes a third nonmagnet on the second nonmagnet, a first ferromagnet on the third nonmagnet, a second ferromagnet, and a fourth nonmagnet between the first ferromagnet and the second ferromagnet. The third nonmagnet has a film thickness of 2 nanometers or less.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer in a polycrystalline state and a second sub-magnetic layer in an amorphous state.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).

Abstract: According to one embodiment, a method of manufacturing a magnetic memory device, includes forming a stack film including a magnetic layer on an underlying area, forming a hard mask on the stack film, forming a stack structure by etching the stack film using the hard mask as a mask, forming a first protective insulating film on a side surface of the stack structure, and performing an oxidation treatment.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer between the first sub-magnetic layer and the second sub-magnetic layer, and the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a magnetization amount smaller than that of the second sub-magnetic layer.