Patents by Inventor Masatsugu Arai
Masatsugu Arai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20040173581Abstract: A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.Type: ApplicationFiled: March 5, 2003Publication date: September 9, 2004Inventors: Ryujiro Udo, Masatsugu Arai, Motohiko Yoshigai, Masanori Kadotani
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Publication number: 20040163601Abstract: A plasma processing apparatus of processing a specimen placed on a table disposed inside of a processing chamber by using plasmas formed in the processing chamber in which the table is disposed to an upper portion thereof and comprises thereon a first member in contact with the specimen and a second member disposed below the first member and which comprises;Type: ApplicationFiled: February 26, 2003Publication date: August 26, 2004Inventors: Masanori Kadotani, Motohiko Yoshigai, Ryujiro Udo, Masatsugu Arai
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Patent number: 6756737Abstract: The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.Type: GrantFiled: May 14, 2002Date of Patent: June 29, 2004Assignee: Hitachi, Ltd.Inventors: Akira Doi, Ken Yoshioka, Manabu Edamura, Hideyuki Kazumi, Saburou Kanai, Tsutomu Tetsuka, Masatsugu Arai, Kenji Maeda, Tsunehiko Tsubone
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Publication number: 20040061449Abstract: A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.Type: ApplicationFiled: September 26, 2003Publication date: April 1, 2004Inventors: Masatsugu Arai, Ryujiro Udo, Naoyuki Tamura, Masanori Kadotani, Motohiko Yoshigai
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Publication number: 20040040663Abstract: The plasma processing apparatus includes a process chamber for processing a sample, evacuation means for decompressing the process chamber, process gas supply means for supplying a process gas to the process chamber, sample holder means for holding the sample processed in the process chamber, bias applying means for applying a bias potential to the sample holder means, electrostatic chucking means for holding the sample to the sample holder means with electrostatic action, and plasma generator means for generating a plasma in the process chamber, in which the sample holder means has a step on an upper surface thereof, the sample is mounted on the uppermost step, a ring member made of a conductive material to which the bias potential can be applied is provided on a surface lower than the surface on which the sample is mounted, the upper surface of the ring member is at the same level as or below the upper surface of the sample, and the upper surface of the ring member is covered with a member made of a dielectType: ApplicationFiled: August 29, 2002Publication date: March 4, 2004Inventors: Ryujiro Udo, Masatsugu Arai, Masanori Kadotani
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Patent number: 6664738Abstract: There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.Type: GrantFiled: February 27, 2002Date of Patent: December 16, 2003Assignees: Hitachi, Ltd., Hitachi High-TechnologiesInventors: Masatsugu Arai, Ryujiro Udo, Naoyuki Tamura, Masanori Kadotani, Motohiko Yoshigai
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Publication number: 20030160628Abstract: A semiconductor processing apparatus for processing a semiconductor in a processing chamber separated from the air wherein the processing chamber contains a wafer stage on which there is positioned a wafer sensor module equipped with sensor probes, each sensor probe capable of detecting at least one of electric current, voltage and temperature of an article to be processed and placed on the wafer sensor module, which is carried into the processing chamber by a transporting means for the article to be processed, and detected values by the sensor probes being converted to optical signals and led to outside of the processing chamber, can optimize conditions for processing the article easily and in a short time without lowering throughput.Type: ApplicationFiled: February 27, 2002Publication date: August 28, 2003Inventors: Ryujiro Udo, Masatsugu Arai, Manabu Edamura
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Publication number: 20030160568Abstract: There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.Type: ApplicationFiled: February 27, 2002Publication date: August 28, 2003Inventors: Masatsugu Arai, Ryujiro Udo, Naoyuki Tamura, Masanori Kadotani, Motohiko Yoshigai
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Patent number: 6499424Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: GrantFiled: July 23, 2001Date of Patent: December 31, 2002Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
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Patent number: 6481370Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: GrantFiled: December 8, 2000Date of Patent: November 19, 2002Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
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Publication number: 20020134510Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: May 7, 2002Publication date: September 26, 2002Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
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Publication number: 20020125828Abstract: The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.Type: ApplicationFiled: May 14, 2002Publication date: September 12, 2002Inventors: Akira Doi, Ken Yoshioka, Manabu Edamura, Hideyuki Kazumi, Saburou Kanai, Tsutomu Tetsuka, Masatsugu Arai, Kenji Maeda, Tsunehiko Tsubone
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Publication number: 20020124963Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: May 7, 2002Publication date: September 12, 2002Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
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Publication number: 20020084035Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: March 4, 2002Publication date: July 4, 2002Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
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Patent number: 6388382Abstract: The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.Type: GrantFiled: March 8, 2000Date of Patent: May 14, 2002Assignee: Hitachi, Ltd.Inventors: Akira Doi, Ken Yoshioka, Manabu Edamura, Hideyuki Kazumi, Saburou Kanai, Tsutomu Tetsuka, Masatsugu Arai, Kenji Maeda, Tsunehiko Tsubone
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Publication number: 20010042595Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: July 23, 2001Publication date: November 22, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
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Publication number: 20010040009Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: July 23, 2001Publication date: November 15, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
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Publication number: 20010037861Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: July 23, 2001Publication date: November 8, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
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Publication number: 20010037857Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: ApplicationFiled: December 8, 2000Publication date: November 8, 2001Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai
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Patent number: 6180019Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.Type: GrantFiled: November 26, 1997Date of Patent: January 30, 2001Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Tsutomu Tetsuka, Ryoji Nishio, Masatsugu Arai, Ken Yoshioka, Tsunehiko Tsubone, Akira Doi, Manabu Edamura, Kenji Maeda, Saburo Kanai