Patents by Inventor Masatsugu Desaki

Masatsugu Desaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8093137
    Abstract: A device layer is formed on at least the upper surface of a prime wafer by an epitaxial growth method. Then, a protective film is formed to cover at least the device layer. The lower surface of the prime wafer is ground to have a flat lower surface.
    Type: Grant
    Filed: March 13, 2009
    Date of Patent: January 10, 2012
    Assignee: Lapis Semiconductor Co., Ltd.
    Inventor: Masatsugu Desaki
  • Publication number: 20090263959
    Abstract: A device layer is formed on at least the upper surface of a prime wafer by an epitaxial growth method. Then, a protective film is formed to cover at least the device layer. The lower surface of the prime wafer is ground to have a flat lower surface.
    Type: Application
    Filed: March 13, 2009
    Publication date: October 22, 2009
    Applicant: OKI SEMICONDUCTOR CO., LTD.
    Inventor: Masatsugu Desaki