Patents by Inventor Masatsugu Ikeda

Masatsugu Ikeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of etching and anti-reflection film using substituted hydrocarbon with halogen gas
    Patent number: 6787457
    Abstract: A portion, positioned at an opening portion of a resist, of an anti-reflection film is etched using an etching gas containing a substituted hydrocarbon with a halogen. At the time of etching of the anti-reflection film, a carbon component of the substituted hydrocarbon with a halogen is formed as a carbonaceous deposit on side walls, less irradiated with ions, of the opening portion of the resist, and on side walls of an opening portion, formed by etching, of the anti-reflection film. The deposit acts as a side wall blocking film, to suppress lateral extension of the opening portion of the resist and the opening portion of the anti-reflection film by etching, thus allowing anisotropic etching of the anti-reflection film. With this etching method, it is possible to etch the anti-reflection film with a resist taken as a mask while suppressing a variation in pattern dimension.
    Type: Grant
    Filed: March 27, 2002
    Date of Patent: September 7, 2004
    Assignee: Sony Corporation
    Inventors: Shusaku Yanagawa, Masatsugu Ikeda, Kenichi Kubo, Youichi Goto
  • Method of fabricating semiconductor device
    Publication number: 20020142486
    Abstract: A portion, positioned at an opening portion of a resist, of an anti-reflection film is etched using an etching gas containing a substituted hydrocarbon with a halogen. At the time of etching of the anti-reflection film, a carbon component of the substituted hydrocarbon with a halogen is formed as a carbonaceous deposit on side walls , less irradiated with ions, of the opening portion of the resist, and on side walls of an opening portion, formed by etching, of the anti-reflection film. The deposit acts as a side wall blocking film, to suppress lateral extension of the opening portion of the resist and the opening portion of the anti-reflection film by etching, thus allowing anisotropic etching of the anti-reflection film. With this etching method, it is possible to etch the anti-reflection film with a resist taken as a mask while suppressing a variation in pattern dimension.
    Type: Application
    Filed: March 27, 2002
    Publication date: October 3, 2002
    Inventors: Shusaku Yanagawa, Masatsugu Ikeda, Kenichi Kubo, Youichi Goto