Patents by Inventor Masatsugu Kusunoki
Masatsugu Kusunoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230238772Abstract: A plurality of laser diode bars and a plurality of dummy bars are alternately arranged on projections provided on an upper surface of a plate so that an opening of the plate is sandwiched between the projections. The plurality of laser diode bars and the plurality of dummy bars are arranged with the projections as reference positions. End surfaces of the plurality of laser diode bars are protruded upward relative to the plurality of dummy bars. Next, an insulation film is formed on protruding portions of the plurality of laser diode bars relative to the plurality of dummy bars.Type: ApplicationFiled: November 12, 2020Publication date: July 27, 2023Applicant: Mitsubishi Electric CorporationInventors: Masato SUZUKI, Masatsugu KUSUNOKI
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Publication number: 20230231360Abstract: A dummy bar is used to deposit an insulating film on a front end face (32) and a rear end face (34) of a laser diode bar (30), the dummy bar including a body part (12) having a plate shape, and including a pair of side surfaces (14), an upper surface (16), and a lower surface (18), the body part having a longitudinal length equal to a longitudinal length of the laser diode bar (30), the pair of side surfaces (14) being orthogonal to a longitudinal direction and opposite each other, the upper surface (16) and the lower surface (18) being orthogonal to the pair of side surfaces, parallel to a thickness direction of the plate shape, and opposite each other and a handle part (20) provided at a position separated from the lower surface (18) on each of the pair of side surfaces (14).Type: ApplicationFiled: September 14, 2020Publication date: July 20, 2023Applicant: Mitsubishi Electric CorporationInventors: Masato SUZUKI, Masatsugu KUSUNOKI
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Patent number: 11411369Abstract: A method for manufacturing a semiconductor device includes: heating solder to wetly spread toward a first end face or a second end face of a submount substrate under restriction on the wet spreading by a burr to form an extending part, so that the extending part directly connects a laser chip and a barrier layer.Type: GrantFiled: April 3, 2018Date of Patent: August 9, 2022Assignee: Mitsubishi Electric CorporationInventors: Masatsugu Kusunoki, Kyosuke Kuramoto, Takehiro Nishida
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Publication number: 20210050706Abstract: A method for manufacturing a semiconductor device includes: heating solder to wetly spread toward a first end face or a second end face of a submount substrate under restriction on the wet spreading by a burr to form an extending part, so that the extending part directly connects a laser chip and a barrier layer.Type: ApplicationFiled: April 3, 2018Publication date: February 18, 2021Applicant: Mitsubishi Electric CorporationInventors: Masatsugu KUSUNOKI, Kyosuke KURAMOTO, Takehiro NISHIDA
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Patent number: 8625646Abstract: A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.Type: GrantFiled: January 25, 2011Date of Patent: January 7, 2014Assignee: Mitsubishi Electric CorporationInventors: Harumi Nishiguchi, Misao Hironaka, Kyosuke Kuramoto, Masatsugu Kusunoki, Yosuke Suzuki
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Patent number: 8435869Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor laminated structure on a substrate as a wafer including semiconductor laser structures; forming a first groove between the semiconductor laser structures on a major surface of the wafer; separating the wafer to laser bars including at least two of the semiconductor laser structures arrayed in a bar shape, after forming the first groove; forming a second groove in the first groove of the laser bars, the second groove having a width no wider than the first groove; and separating one of the laser bars into respective semiconductor lasers along the second groove.Type: GrantFiled: August 25, 2010Date of Patent: May 7, 2013Assignee: Mitsubishi Electric CorporationInventors: Misao Hironaka, Harumi Nishiguchi, Kyosuke Kuramoto, Masatsugu Kusunoki
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Publication number: 20110249694Abstract: A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.Type: ApplicationFiled: January 25, 2011Publication date: October 13, 2011Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Harumi Nishiguchi, Misao Hironaka, Kyosuke Kuramoto, Masatsugu Kusunoki, Yosuke Suzuki
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Publication number: 20110183453Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor laminated structure on a substrate as a wafer including semiconductor laser structures; forming a first groove between the semiconductor laser structures on a major surface of the wafer; separating the wafer to laser bars including at least two of the semiconductor laser structures arrayed in a bar shape, after forming the first groove; forming a second groove in the first groove of the laser bars, the second groove having a width no wider than the first groove; and separating one of the laser bars into respective semiconductor lasers along the second groove.Type: ApplicationFiled: August 25, 2010Publication date: July 28, 2011Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Misao Hironaka, Harumi Nishiguchi, Kyosuke Kuramoto, Masatsugu Kusunoki
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Patent number: 7897418Abstract: A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.Type: GrantFiled: December 10, 2008Date of Patent: March 1, 2011Assignee: Mitsubishi Electric CorporationInventors: Takafumi Oka, Masatsugu Kusunoki, Kazushige Kawasaki, Shinji Abe, Hitoshi Sakuma
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Patent number: 7879684Abstract: A semiconductor light-emitting device comprises: a semiconductor substrate; a semiconductor layer structure on the semiconductor substrate, including an active layer and a waveguide ridge; an electrode in contact with all of a top surface of the waveguide ridge; and an insulating film coating side faces of the waveguide ridge, side faces of the electrode, and ends, but not a center portion, of an upper face of the electrode.Type: GrantFiled: February 24, 2010Date of Patent: February 1, 2011Assignee: Mitsubishi Electric CorporationInventors: Takafumi Oka, Masatsugu Kusunoki, Shinji Abe
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Patent number: 7796664Abstract: A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of ?/4 with respect to the wavelength ? of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.Type: GrantFiled: January 2, 2009Date of Patent: September 14, 2010Assignee: Mitsubishi Electric CorporationInventors: Yasuyuki Nakagawa, Harumi Nishiguchi, Kyosuke Kuramoto, Masatsugu Kusunoki, Takeo Shirahama, Yosuke Suzuki, Hiromasu Matsuoka
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Publication number: 20100219438Abstract: A semiconductor light-emitting device comprises: a semiconductor substrate; a semiconductor layer structure on the semiconductor substrate, including an active layer and a waveguide ridge; an electrode in contact with all of a top surface of the waveguide ridge; and an insulating film coating side faces of the waveguide ridge, side faces of the electrode, and ends, but not a center portion, of an upper face of the electrode.Type: ApplicationFiled: February 24, 2010Publication date: September 2, 2010Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Takafumi Oka, Masatsugu Kusunoki, Shinji Abe
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Patent number: 7611916Abstract: A method of manufacturing a semiconductor optical element, includes successively stacking a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; applying a resist to the second semiconductor layer and patterning the resist into stripes by photolithography; forming recesses in the second semiconductor layer and a waveguide ridge adjacent to the recesses by dry-etching the second semiconductor layer only partially through the second semiconductor layer, using the resist as a mask; forming an insulating film on the waveguide ridge and in the recesses while leaving the resist; removing the insulating film from the resist so that the resist is exposed while the insulating film in the recess is left; removing the resist exposed; and forming an electrode on the waveguide ridge after removing the resist.Type: GrantFiled: March 4, 2009Date of Patent: November 3, 2009Assignee: Mitsubishi Electric CorporationInventors: Masatsugu Kusunoki, Takafumi Oka
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Publication number: 20090227055Abstract: A method of manufacturing a semiconductor optical element, includes successively stacking a first semiconductor layer of a first conductivity type, an active layers and a second semiconductor layer of a second conductivity type; applying a resist to the second semiconductor layer and patterning the resist into stripes by photolithography; forming recesses in the second semiconductor layer and a waveguide ridge adjacent to the recesses by dry-etching the second semiconductor layer only partially through the second semiconductor layer, using the resist as a mask; forming an insulating film on the waveguide ridge and in the recesses while leaving the resist; removing the insulating film from the resist so that the resist is exposed while the insulating film in the recess is left; removing the resist exposed; and forming an electrode on the waveguide ridge after removing the resist.Type: ApplicationFiled: March 4, 2009Publication date: September 10, 2009Applicant: Mitsubishi Electric CorporationInventors: Masatsugu Kusunoki, Takafumi Oka
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Publication number: 20090185595Abstract: A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of ?/4 with respect to the wavelength ? of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film; to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.Type: ApplicationFiled: January 2, 2009Publication date: July 23, 2009Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Yasuyuki Nakagawa, Harumi Nishiguchi, Kyosuke Kuramoto, Masatsugu Kusunoki, Takeo Shirahama, Yosuke Suzuki, Hiromasu Matsuoka
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Publication number: 20090170225Abstract: A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.Type: ApplicationFiled: December 10, 2008Publication date: July 2, 2009Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Takafumi Oka, Masatsugu Kusunoki, Kazushige Kawasaki, Shinji Abe, Hitoshi Sakuma