Abstract: An etching method includes mounting a substrate on a stage in a processing chamber, the substrate including a laminate film. The etching method includes supplying process gas to the processing chamber, the process gas including at least one of fluorocarbon gas or hydrofluorocarbon gas. The etching method includes selecting, based on a combination of material of a silicon-containing insulating layer and material of an underlying layer, a surface temperature range of at least one member of a first member or a second member in the processing chamber, the first member facing the substrate, and the second member being provided to encircle the substrate. The etching method includes adjusting a surface temperature of the one member to be within the selected surface temperature range. The etching method includes forming a plasma in the processing chamber to which the process gas is supplied, thereby etching the silicon-containing insulating layer.

Abstract: An etching method includes mounting a substrate on a stage in a processing chamber, the substrate including a laminate film. The etching method includes supplying process gas to the processing chamber, the process gas including at least one of fluorocarbon gas or hydrofluorocarbon gas. The etching method includes selecting, based on a combination of material of a silicon-containing insulating layer and material of an underlying layer, a surface temperature range of at least one member of a first member or a second member in the processing chamber, the first member facing the substrate, and the second member being provided to encircle the substrate. The etching method includes adjusting a surface temperature of the one member to be within the selected surface temperature range. The etching method includes forming a plasma in the processing chamber to which the process gas is supplied, thereby etching the silicon-containing insulating layer.

Abstract: A substrate processing apparatus includes a placing table, having a placing surface on which a processing target substrate is placed, provided with a gas supply line through which a heat transfer gas is supplied into a gap between the processing target substrate and the placing surface; and a gas supply system configured to generate the heat transfer gas to be supplied into the gap between the processing target substrate and the placing surface through the gas supply line by mixing a heat transfer gas having a relatively low temperature and a heat transfer gas having a relatively high temperature.

Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.