Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Abstract: Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0?x?1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.

Abstract: Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0?x?1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.