Patents by Inventor Masaya Komai

Masaya Komai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a ferroelectric thin film
    Patent number: 5714194
    Abstract: A method for producing a ferroelectric thin film according to the present invention includes the steps of: forming a PbTiO.sub.3 film on an electrode provided on a substrate; and forming a PZT film on the PbTiO.sub.3 film by a CVD method.
    Type: Grant
    Filed: May 23, 1995
    Date of Patent: February 3, 1998
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masaya Komai, Kazuya Ishihara
  • Crystallizing method of ferroelectric film
    Patent number: 5443030
    Abstract: A lower capacitor electrode is formed on the basic plate 1, and thereafter a ferroelectric film, for example, a PZT film having the Pb is formed. ITO, RuO2, SnO2 which are Pt or oxide conductive material are formed as a cap layer into 200 .ANG. or more in film thickness by a sputtering method or silicone oxide film or the like are formed with 200A or more in film thickness by a thermal CVD method. Thereafter, a thermal operating operation is effected. By the prevention of the Pb from being evaporated at the thermal processing time, the elaborate ferroelectric film of stoichiometrical perovskite construction can be formed.
    Type: Grant
    Filed: October 11, 1994
    Date of Patent: August 22, 1995
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kazuya Ishihara, Shigeo Onishi, Masaya Komai